STF2907A
SMALL SIGNAL PNP TRANSISTOR
PRELIMINARY DATA
s
SILICON EPITAXIAL PLANAR PNP
TRANSISTOR
s
MINIATURE SOT-89 PLASTIC PACKAGE
FOR SURFACE MOUNTING CIRCUITS
s
TAPE & REEL PACKING
s
THE NPN COMPLEMENTARY TYPE IS
STF2222A
APPLICATIONS
s
WELL SUITABLE FOR PORTABLE
EQUIPMENT
s
SMALL LOAD SWITCH TRANSISTOR WITH
HIGH GAIN AND LOW SATURATION
VOLTAGE
INTERNAL SCHEMATIC DIAGRAM
February 2003
SOT-89
Type
Marking
STF2907A
03F
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
Value
Unit
V
CBO
Collector-Emitter Voltage (I
E
= 0)
-60
V
V
CEO
Collector-Emitter Voltage (I
B
= 0)
-60
V
V
EBO
Emitter-Base Voltage (I
C
= 0)
-5
V
I
C
Collector Current
-0.6
A
I
CM
Collector Peak Current (t
p
< 5 ms)
-0.8
A
P
tot
Total Dissipation at T
C
= 25
o
C
1.2
W
T
stg
Storage Temperature
-65 to 150
o
C
T
j
Max. Operating Junction Temperature
150
o
C
1/4
THERMAL DATA
R
thj-amb
Thermal Resistance Junction-Ambient Max
104.1
o
C/W
Device mounted on a PCB area of 1 cm
2
ELECTRICAL CHARACTERISTICS (T
case
= 25
o
C unless otherwise specified)
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
I
CEX
Collector Cut-off
Current (V
BE
= -3 V)
V
CE
= -30 V
-50
nA
I
BEX
Base Cut-off Current
(V
BE
= -3 V)
V
CE
= -30 V
-50
nA
I
CBO
Collector Cut-off
Current (I
E
= 0)
V
CB
= -50 V
-10
nA
V
(BR)CEO
Collector-Emitter
Breakdown Voltage
(I
B
= 0)
I
C
= -10 mA
-60
V
V
(BR)CBO
Collector-Base
Breakdown Voltage
(I
E
= 0)
I
C
= -10
A
-60
V
V
(BR)EBO
Emitter-Base
Breakdown Voltage
(I
C
= 0)
I
E
= -10
A
-5
V
V
CE(sat)
Collector-Emitter
Saturation Voltage
I
C
= -150 mA I
B
= -15 mA
I
C
= -500 mA I
B
= -50 mA
-0.4
-1.6
V
V
V
BE(sat)
Collector-Base
Saturation Voltage
I
C
= -150 mA I
B
= -15 mA
I
C
= -500 mA I
B
= -50 mA
-1.3
-2.6
V
V
h
FE
DC Current Gain
I
C
= -0.1 mA V
CE
= -10 V
I
C
= -1 mA V
CE
= -10 V
I
C
= -10 mA V
CE
= -10 V
I
C
= -150 mA V
CE
= -10 V
I
C
= -500 mA V
CE
= -10 V
75
100
100
100
50
300
f
T
Transition Frequency
I
C
= -50 mA V
CE
= -20V f = 100MHz
200
MHz
C
CBO
Collector-Base
Capacitance
I
E
= 0 V
CB
= -10 V f = 1 MHz
8
pF
C
EBO
Emitter-Base
Capacitance
I
C
= 0 V
EB
= -2 V f = 1 MHz
30
pF
t
d
Delay Time
I
C
= -150 mA I
B
= -15 mA
V
CC
= -30V
10
ns
t
r
Rise Time
40
ns
t
on
Switching On Time
45
ns
t
s
Storage Time
I
C
= -150 mA I
B1
= -I
B2
= -15mA
V
CC
= -30V
190
ns
t
f
Fall Time
30
ns
t
off
Switching Off Time
220
ns
Pulsed: Pulse duration = 300
s, duty cycle
2 %
STF2907A
2/4
DIM.
mm
mils
MIN.
TYP.
MAX.
MIN.
TYP.
MAX.
A
1.4
1.6
55.1
63.0
B
0.44
0.56
17.3
22.0
B1
0.36
0.48
14.2
18.9
C
0.35
0.44
13.8
17.3
C1
0.35
0.44
13.8
17.3
D
4.4
4.6
173.2
181.1
D1
1.62
1.83
63.8
72.0
E
2.29
2.6
90.2
102.4
e
1.42
1.57
55.9
61.8
e1
2.92
3.07
115.0
120.9
H
3.94
4.25
155.1
167.3
L
0.89
1.2
35.0
47.2
P025H
SOT-89 MECHANICAL DATA
STF2907A
3/4
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of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is
granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are
subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products
are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.
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