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August 2003
STGB10NB40LZ
N-CHANNEL CLAMPED 20A - DPAK
INTERNALLY CLAMPED PowerMESHTM IGBT
s
POLYSILICON GATE VOLTAGE DRIVEN
s
LOW THRESHOLD VOLTAGE
s
LOW ON-VOLTAGE DROP
s
LOW GATE CHARGE
s
HIGH CURRENT CAPABILITY
s
HIGH VOLTAGE CLAMPING FEATURE
DESCRIPTION
Using the latest high voltage technology based on a
patented strip layout, STMicroelectronics has
designed an advanced family of IGBTs, the
PowerMESH
TM
IGBTs, with outstanding
performances. The built in collector-gate zener
exhibits a very precise active clamping while the
gate-emitter zener supplies an ESD protection.
APPLICATIONS
s
AUTOMOTIVE IGNITION
ORDERING INFORMATION
TYPE
V
CES
V
CE(sat)
I
C
STGB10NB40LZ
CLAMPED
< 1.8
V
20 A
SALES TYPE
MARKING
PACKAGE
PACKAGING
STGB10NB40LZT4
GB10NB40LZ
D
2
PAK
TAPE & REEL
D
2
PAK
1
3
INTERNAL SCHEMATIC DIAGRAM
STGB10NB40LZ
2/10
ABSOLUTE MAXIMUM RATINGS
( )
Pulse width limited by safe operating area
THERMAL DATA
ELECTRICAL CHARACTERISTICS (T
CASE
= 25 C UNLESS OTHERWISE SPECIFIED)
OFF
ON (1)
Symbol
Parameter
Value
Unit
V
CES
Collector-Emitter Voltage (V
GS
= 0)
CLAMPED
V
V
ECR
Emitter-Collector Voltage
18
V
V
GE
Gate-Emitter Voltage
CLAMPED
V
I
C
Collector Current (continuos) at T
C
= 25C
20
A
I
C
Collector Current (continuos) at T
C
= 100C
10
A
I
CM
( )
Collector Current (pulsed)
40
A
Eas
Single Pulse Energy Tc = 25C
300
mJ
P
TOT
Total Dissipation at T
C
= 25C
150
W
Derating Factor
1
W/C
E
SD
ESD (Human Body Model)
4
KV
T
stg
Storage Temperature
55 to 175
C
T
j
Operating Junction Temperature
Rthj-case
Thermal Resistance Junction-case Max
1
C/W
Rthj-amb
Thermal Resistance Junction-ambient Max
62.5
C/W
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
BV
(CES)
Clamped Voltage
I
C
= 2 mA, V
GE
= 0,
Tj= - 40C to 150C
380
410
440
V
BV
(ECR)
Emitter Collector Break-down
Voltage
I
C
= 75 mA, Tj= 25C
18
V
BV
GE
Gate Emitter Break-down
Voltage
I
G
= 2 mA
12
16
V
I
CES
Collector cut-off Current
(V
GE
= 0)
V
CE
= 15 V, V
GE
= 0 ,T
j
= 150 C
10
A
V
CE
= 200 V, V
GE
= 0 ,T
j
= 150C
100
A
I
GES
Gate-Emitter Leakage
Current (V
CE
= 0)
V
GE
= 10V , V
CE
= 0
700
A
R
GE
Gate Emitter Resistance
20
K
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
V
GE(th)
Gate Threshold Voltage
V
CE
= V
GE
, I
C
= 250 A,
T
C
= - 40C to 150C
0.6
2.2
V
V
CE(SAT)
Collector-Emitter Saturation
Voltage
V
GE
=4.5V, I
C
= 10 A, Tj= 25C
1.2
1.8
V
V
GE
=4.5V, I
C
= 20 A, Tj= 25C
1.3
V
3/10
STGB10NB40LZ
ELECTRICAL CHARACTERISTICS (CONTINUED)
DYNAMIC
FUNCTIONAL CHARACTERISTICS
SWITCHING ON
SWITCHING OFF
(1)Pulse width limited by max. junction temperature.
(**)Losses Include Also the Tail
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
g
fs
Forward Transconductance
V
CE
= 15 V
,
I
C
= 10 A
18
S
C
ies
Input Capacitance
V
CE
= 25V, f = 1 MHz, V
GE
= 0
1300
pF
C
oes
Output Capacitance
105
pF
C
res
Reverse Transfer
Capacitance
12
pF
Q
g
Gate Charge
V
CE
= 328V, I
C
= 10 A,
V
GE
= 5V
28
nC
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
II
Latching Current
V
Clamp
= 328 V, T
C
= 125 C
R
GOFF
= 1K
, V
GE
= 5 V
40
A
U.I.S.
Functional Test Open
Secondary Coil
R
GOFF
= 1K
, L = 1 mH ,
Tc= 125C
13
A
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
t
d(on)
Turn-on Delay Time
V
CC
= 328 V, I
C
= 10 A
R
G
= 1K
, V
GE
= 5 V
1300
ns
t
r
Rise Time
270
ns
(di/dt)
on
Turn-on Current Slope
V
CC
= 328 V, I
C
= 10 A
R
G
=1K
, V
GE
= 5 V
60
A/s
Eon
Turn-on Switching Losses
V
CC
= 328 V, I
C
= 10 A, T
C
= 25 C
R
G
= 1K
, V
GE
= 5 V, T
C
= 125 C
2.4
2.6
mJ
mJ
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
t
c
Cross-over Time
V
cc
= 328 V, I
C
= 10 A,
R
GE
= 1K
, V
GE
= 5 V
3.6
s
t
r
(V
off
)
Off Voltage Rise Time
2
s
t
d
(
off
)
Delay Time
8
s
t
f
Fall Time
1.4
s
E
off
(**)
Turn-off Switching Loss
5
mJ
t
c
Cross-over Time
V
cc
= 328 V, I
C
= 10 A,
R
GE
= 1K
, V
GE
= 5 V
Tj = 125 C
5.7
s
t
r
(V
off
)
Off Voltage Rise Time
2.7
s
t
d
(
off
)
Delay Time
9.2
s
t
f
Fall Time
2.8
s
E
off
(**)
Turn-off Switching Loss
8.7
mJ
STGB10NB40LZ
4/10
Collector-Emitter On Voltage vs Collector Current
Collector-Emitter On Voltage vs Temperature
Normalized Collector-Emitter On Voltage vs Temp.
Transconductance
Transfer Characteristics
Output Characteristics
5/10
STGB10NB40LZ
Normalized Clamping Voltage vs Temperature
Total Switching Losses vs Temperature
Total Switching Losses vs Gate Resistance
Gate Charge vs Gate-Emitter Voltage
Capacitance Variations
Gate Threshold vs Temperature
STGB10NB40LZ
6/10
Thermal Impedance
Turn-Off SOA
Total Switching Losses vs Collector Current
7/10
STGB10NB40LZ
Fig. 4: Gate Charge test Circuit
Fig. 3: Test Circuit For Inductive Load Switching
And Diode Recovery Times
Fig. 2: Unclamped Inductive Waveform
Fig. 1: Unclamped Inductive Load Test Circuit
STGB10NB40LZ
8/10
1
DIM.
mm.
inch
MIN.
TYP
MAX.
MIN.
TYP.
MAX.
A
4.4
4.6
0.173
0.181
A1
2.49
2.69
0.098
0.106
A2
0.03
0.23
0.001
0.009
B
0.7
0.93
0.027
0.036
B2
1.14
1.7
0.044
0.067
C
0.45
0.6
0.017
0.023
C2
1.23
1.36
0.048
0.053
D
8.95
9.35
0.352
0.368
D1
8
0.315
E
10
10.4
0.393
E1
8.5
0.334
G
4.88
5.28
0.192
0.208
L
15
15.85
0.590
0.625
L2
1.27
1.4
0.050
0.055
L3
1.4
1.75
0.055
0.068
M
2.4
3.2
0.094
0.126
R
0.4
0.015
V2
0
8
D
2
PAK MECHANICAL DATA
3
9/10
STGB10NB40LZ
TAPE AND REEL SHIPMENT (suffix "T4")*
TUBE SHIPMENT (no suffix)*
D
2
PAK FOOTPRINT
* on sales type
DIM.
mm
inch
MIN.
MAX.
MIN.
MAX.
A
330
12.992
B
1.5
0.059
C
12.8
13.2
0.504
0.520
D
20.2
0795
G
24.4
26.4
0.960
1.039
N
100
3.937
T
30.4
1.197
BASE QTY
BULK QTY
1000
1000
REEL MECHANICAL DATA
DIM.
mm
inch
MIN.
MAX.
MIN.
MAX.
A0
10.5
10.7
0.413
0.421
B0
15.7
15.9
0.618
0.626
D
1.5
1.6
0.059
0.063
D1
1.59
1.61
0.062
0.063
E
1.65
1.85
0.065
0.073
F
11.4
11.6
0.449
0.456
K0
4.8
5.0
0.189
0.197
P0
3.9
4.1
0.153
0.161
P1
11.9
12.1
0.468
0.476
P2
1.9
2.1
0.075
0.082
R
50
1.574
T
0.25
0.35
0.0098 0.0137
W
23.7
24.3
0.933
0.956
TAPE MECHANICAL DATA
STGB10NB40LZ
10/10
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the
consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from
its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications
mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information
previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or
systems without express written approval of STMicroelectronics.
The ST logo is a registered trademark of STMicroelectronics
2003 STMicroelectronics - Printed in Italy - All Rights Reserved
STMicroelectronics GROUP OF COMPANIES
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