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April 2004
STGB20NB41LZ
N-CHANNEL CLAMPED 20A - DPAK
INTERNALLY CLAMPED PowerMESHTM IGBT
s
POLYSILICON GATE VOLTAGE DRIVEN
s
LOW THRESHOLD VOLTAGE
s
LOW ON-VOLTAGE DROP
s
LOW GATE CHARGE
s
HIGH CURRENT CAPABILITY
s
HIGH VOLTAGE CLAMPING FEATURE
DESCRIPTION
Using the latest high voltage technology based on a
patented strip layout, STMicroelectronics has
designed an advanced family of IGBTs, the
PowerMESH
TM
IGBTs, with outstanding
performances. The built in collector-gate zener
exhibits a very precise active clamping while the
gate-emitter zener supplies an ESD protection.
APPLICATIONS
s
AUTOMOTIVE IGNITION
ORDER CODE
TYPE
V
CES
V
CE(sat)
I
C
STGB20NB41LZ
CLAMPED
< 2.0
V
20 A
PART NUMBER
MARKING
PACKAGE
PACKAGING
STGB20NB41LZT4
GB20NB41LZ
D
2
PAK
TAPE & REEL
1
3
DPAK
INTERNAL SCHEMATIC DIAGRAM
STGB20NB41LZ
2/9
ABSOLUTE MAXIMUM RATINGS
( )
Pulse width limited by safe operating area
THERMAL DATA
ELECTRICAL CHARACTERISTICS (T
CASE
= 25 C UNLESS OTHERWISE SPECIFIED)
OFF
ON (1)
Symbol
Parameter
Value
Unit
V
CES
Collector-Emitter Voltage (V
GS
= 0)
CLAMPED
V
V
ECR
Emitter-Collector Voltage
20
V
V
GE
Gate-Emitter Voltage
CLAMPED
V
I
C
Collector Current (continuous) at T
C
= 25C
40
A
I
C
Collector Current (continuous) at T
C
= 100C
20
A
I
CM
( )
Collector Current (pulsed)
80
A
Eas
Single Pulse Energy Tc = 25C
700
mJ
P
TOT
Total Dissipation at T
C
= 25C
200
W
Derating Factor
1.33
W/C
E
SD
ESD (Human Body Model)
8
KV
T
stg
Storage Temperature
55 to 175
C
T
j
Operating Junction Temperature
Rthj-case
Thermal Resistance Junction-case Max
0.75
C/W
Rthj-amb
Thermal Resistance Junction-ambient Max
62.5
C/W
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
BV
(CES)
Clamped Voltage
I
C
= 2 mA, V
GE
= 0,
Tc= - 40C
150C
382
412
442
V
BV
(ECR)
Emitter Collector Break-down
Voltage
I
C
= 75 mA, Tc= 25C
20
28
V
BV
GE
Gate Emitter Break-down
Voltage
I
G
= 2 mA
12
14
16
V
I
CES
Collector cut-off Current
(V
GE
= 0)
V
CE
= 15 V, V
GE
= 0 ,T
C
= 150 C
10
A
V
CE
=200 V, V
GE
= 0 ,T
C
= 150C
100
A
I
GES
Gate-Emitter Leakage
Current (V
CE
= 0)
V
GE
= 10V , V
CE
= 0
300
660
1000
A
R
GE
Gate Emitter Resistance
10
15
30
K
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
V
GE(th)
Gate Threshold Voltage
V
CE
= V
GE
, I
C
= 250A, Tc=25C
1
2.4
V
V
CE(SAT)
Collector-Emitter Saturation
Voltage
V
GE
= 4.5V, I
C
= 10 A, Tc= 25C
V
GE
= 4.5V, I
C
= 20 A, Tc= 25C
1.1
1.3
1.8
2.0
V
V
3/9
STGB20NB41LZ
DYNAMIC
FUNCTIONAL CHARACTERISTICS
SWITCHING ON
SWITCHING OFF
(1)Pulse width limited by max. junction temperature.
(**)Losses Include Also the Tail
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
g
fs
Forward Transconductance
V
CE
= 25 V
,
I
C
=20 A
35
S
C
ies
Input Capacitance
V
CE
= 25V, f = 1 MHz, V
GE
= 0
2300
pF
C
oes
Output Capacitance
160
pF
C
res
Reverse Transfer
Capacitance
25
pF
Q
g
Gate Charge
V
CE
= 320V, I
C
= 20 A,
V
GE
= 5V
46
nC
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
II
Latching Current
V
Clamp
= 320 V, T
C
= 125 C
R
GOFF
= 1K
, V
GE
= 10 V
40
A
U.I.S.
Functional Test Open
Secondary Coil
R
GOFF
=1K
, L = 1.6mH,
Tc=125C
20
A
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
t
d(on)
t
r
Turn-on Delay Time
Rise Time
V
CC
= 320 V, I
C
= 20 A
R
G
= 1K
, V
GE
= 5 V
1
0.22
s
s
(di/dt)
on
Turn-on Current Slope
V
CC
= 320 V, I
C
= 20 A
R
G
=1K
, V
GE
= 5 V
140
A/s
Eon
Turn-on Switching Losses
V
CC
= 320 V, I
C
= 20 A, Tc=25C
5
mJ
R
G
=1K
, V
GE
= 5 V, Tc=150C
5.1
mJ
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
t
c
Cross-over Time
V
cc
= 320 V, I
C
= 20 A,
R
GE
= 1K
, V
GE
= 5 V
4.4
s
t
r
(V
off
)
Off Voltage Rise Time
2.5
s
t
d
(
off
)
Delay Time
12.1
s
t
f
Fall Time
1.6
s
E
off
(**)
Turn-off Switching Loss
12.9
mJ
t
c
Cross-over Time
V
cc
= 320 V, I
C
= 20 A,
R
GE
= 1 K
, V
GE
= 5 V
Tj = 125 C
6
s
t
r
(V
off
)
Off Voltage Rise Time
3.16
s
t
d
(
off
)
Delay Time
13.4
s
t
f
Fall Time
2.7
s
E
off
(**)
Turn-off Switching Loss
18.4
mJ
STGB20NB41LZ
4/9
Transconductance
Normalized Gate Threshold Voltage vs Temp.
Transfer Characteristics
Output Characteristics
Normalized Collector-Emitter On Voltage vs
Temperature
Normalized Collector-Emitter On Voltage vs
Gate-Emitter Voltage
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STGB20NB41LZ
Normalized Break-down Voltage vs Temp.
Off Losses vs Collector Current
Gate Charge vs Gate-Emitter Voltage
Capacitance Variations
Off Losses vs Gate Resistance
Normalized BVGE vs Temperature
STGB20NB41LZ
6/9
Thermal Impedance
Switching Off Safe Operating Area
Off Losses vs Temperature
7/9
STGB20NB41LZ
1
DIM.
mm.
inch
MIN.
TYP
MAX.
MIN.
TYP.
MAX.
A
4.4
4.6
0.173
0.181
A1
2.49
2.69
0.098
0.106
A2
0.03
0.23
0.001
0.009
B
0.7
0.93
0.027
0.036
B2
1.14
1.7
0.044
0.067
C
0.45
0.6
0.017
0.023
C2
1.23
1.36
0.048
0.053
D
8.95
9.35
0.352
0.368
D1
8
0.315
E
10
10.4
0.393
E1
8.5
0.334
G
4.88
5.28
0.192
0.208
L
15
15.85
0.590
0.625
L2
1.27
1.4
0.050
0.055
L3
1.4
1.75
0.055
0.068
M
2.4
3.2
0.094
0.126
R
0.4
0.015
V2
0
8
D
2
PAK MECHANICAL DATA
3
STGB20NB41LZ
8/9
TAPE AND REEL SHIPMENT (suffix "T4")*
TUBE SHIPMENT (no suffix)*
D
2
PAK FOOTPRINT
* on sales type
DIM.
mm
inch
MIN.
MAX.
MIN.
MAX.
A
330
12.992
B
1.5
0.059
C
12.8
13.2
0.504
0.520
D
20.2
0795
G
24.4
26.4
0.960
1.039
N
100
3.937
T
30.4
1.197
BASE QTY
BULK QTY
1000
1000
REEL MECHANICAL DATA
DIM.
mm
inch
MIN.
MAX.
MIN.
MAX.
A0
10.5
10.7
0.413
0.421
B0
15.7
15.9
0.618
0.626
D
1.5
1.6
0.059
0.063
D1
1.59
1.61
0.062
0.063
E
1.65
1.85
0.065
0.073
F
11.4
11.6
0.449
0.456
K0
4.8
5.0
0.189
0.197
P0
3.9
4.1
0.153
0.161
P1
11.9
12.1
0.468
0.476
P2
1.9
2.1
0.075
0.082
R
50
1.574
T
0.25
0.35
0.0098 0.0137
W
23.7
24.3
0.933
0.956
TAPE MECHANICAL DATA
9/9
STGB20NB41LZ
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the
consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from
its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications
mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information
previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or
systems without express written approval of STMicroelectronics.
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All other names are the property of their respective owners
2004 STMicroelectronics - All Rights Reserved
STMicroelectronics GROUP OF COMPANIES
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