1/8
November 2000
STGB3NB60SD
N-CHANNEL 3A - 600V
D
2
PAK
Power MESHTM IGBT
s
HIGH INPUT IMPEDANCE
(VOLTAGE DRIVEN)
s
VERY LOW ON-VOLTAGE DROP (V
cesat
)
s
HIGH CURRENT CAPABILITY
s
OFF LOSSES INCLUDE TAIL CURRENT
s
INTEGRATED FREEWHEELING DIODE
s
SURFACE-MOUNTING D
2
PAK (TO-263)
POWER PACKAGE IN TAPE & REEL
(SUFFIX "T4")
DESCRIPTION
Using the latest high voltage technology based on a
patented strip layout, STMicroelectronics has designed
an advanced family of IGBTs, the PowerMESHTM IGBTs,
with outstanding perfomances. The suffix "S" identifies a
family optimized to achieve minimum on-voltage drop for
low frequency applications (<1kHz).
APPLICATIONS
s
GAS DISCHARGE LAMP
s
STATIC RELAYS
s
MOTOR CONTROL
TYPE
V
CES
V
CE(sat)
I
c
STGB3NB60SD
600 V
<1.5 V
3 A
D
2
PAK
TO-263
(suffix"T4")
1
3
ABSOLUTE MAXIMUM RATINGS
(
)Pulse width limited by safe operating area.
Symbol
Parameter
Value
Unit
V
CES
Collector-Emitter Voltage (V
GS
= 0)
600
V
V
GE
Gate-Emitter Voltage
20
V
I
C
Collector Current (continuos) at T
c
=25C
6
A
I
C
Collector Current (continuos)at T
c
=100C
3
A
I
CM
(
)
Collector Current (pulsed)
25
A
P
tot
Total Dissipation at T
c
= 25C
70
W
Derating Factor
0.46
W/C
T
stg
Storage Temperature
60 to 175
C
T
j
Max. Operating Junction Temperature
175
C
INTERNAL SCHEMATIC DIAGRAM
STGB3NB60SD
2/8
THERMAL DATA
ELECTRICAL CHARACTERISTICS (T
case
= 25 C unless otherwise specified)
OFF
ON
(*)
DYNAMIC
SWITCHING ON
R
thj-case
Thermal Resistance Junction-case
Max
2.14
C/W
R
thj-amb
Thermal Resistance Junction-ambient
Max
62.5
C/W
R
thc-sink
Thermal Resistance Case-sink
Typ
0.5
C/W
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
V
BR(CES)
Collector-Emitter
Breakdown Voltage
I
D
= 250 A
V
GE
= 0
600
V
I
CES
Collector cut-off (V
GE
= 0)
V
CE
= Max Rating T
j
= 25 C
V
CE
= Max Rating T
j
= 125 C
10
100
A
A
I
GSS
Gate-body Leakage
Current (V
DS
= 0)
V
GS
= 20V
V
CE
= 0
100
nA
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
V
GE(th)
Gate Threshold Voltage
V
CE
= V
GE
I
C
= 250 A
2.5
5
V
V
CE(SAT)
Collector-Emitter Saturation
Voltage
V
GE
= 15 V
I
C
= 1.5 A
V
GE
= 15 V
I
C
= 3 A
V
GE
= 15 V I
D
= 3 A T
j
= 125 C
1
1.2
1.1
1.5
V
V
V
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
g
fs
Forward Transconductance
V
CE
= 25 V
I
C
= 3 A
1.7
2.5
S
C
ies
Input Capacitance
V
CE
= 25V f = 1 MHz V
GE
= 0
255
330
pF
C
oes
Output Capacitance
30
40
pF
C
res
Reverse Transfer Capacitanc-
es
5.6
7
pF
Q
G
Total Gate Charge
V
CE
=480V I
C
=3 A V
GE
=15 V
18
nC
Q
GE
Gate-Emitter Charge
5.4
nC
Q
GC
Gate-Collector Charge
5.5
nC
I
CL
Latching Current
V
clamp
= 480 V
R
G
= 1 K
T
j
=150 C
12
A
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
t
d(on)
t
r
DelayTime
Rise Time
V
CC
= 480 V
I
C
= 3 A
V
GE
= 15 V
R
G
= 1 k
125
150
ns
ns
(di/dt)
on
E
on
Turn-on Current Slope
Turn-on Switching Losses
V
CC
= 480 V
I
C
= 3 A
V
GE
= 15 V
R
G
= 1 k
T
j
=125 C
50
1100
A/
s
J
3/8
STGB3NB60SD
SWITCHING OFF
COLLECTOR-EMITTER DIODE
(
)
Pulse width limited by max. junction temperature
(*)
Pulsed: Pulse duration = 300 s, duty cycle 1.5 %.
(
)
Losses Include Also The Tail (Jedec Standardization)
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
t
c
t
r
(
Voff
)
t
d
(
Voff
)
t
f
E
off
(
**
)
Cross-Over Time
Off Voltage Rise Time
Delay Time
Fall Time
Turn-off Switching Loss
V
CC
= 480 V
I
C
= 3 A
R
GE
= 1 k
V
GE
= 15 V
1.8
1.0
3.4
0.72
1.15
s
s
s
s
mJ
t
c
t
r
(
Voff
)
t
d
(
Voff
)
t
f
E
off
(
**
)
Cross-Over Time
Off Voltage Rise Time
Delay Time
Fall Time
Turn-off Switching Loss
V
CC
= 480 V
I
C
= 3 A
R
GE
= 1 k
V
GE
= 15 V
T
j
= 125 C
2.8
1.45
3.6
1.2
1.8
s
s
s
s
mJ
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
I
f
I
fm
Forward Current
Forward Current pulsed
3
25
A
A
V
f
Forward On-Voltage
I
f
= 3 A
I
f
= 1 A
1.55
1.15
1.9
V
V
t
rr
Q
rr
I
rrm
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
I
f
= 3 A
V
R
= 200 V
di/dt = 100 A/s
T
j
= 125 C
1700
4500
9.5
ns
nC
A
ELECTRICAL CHARACTERISTICS (continued)
Thermal Impedance
STGB3NB60SD
4/8
Output Characteristics
Transfer Characteristics
Transconductance
Collector-Emitter on Voltage vs Temperature
Collector-Emiter on Voltage vs Collector Current
Gate Threshold vs Temperature
5/8
STGB3NB60SD
Normalized Breakdown Voltage vs Temperature
Capacitance Variations
Gate charge Gate-Emitter Voltage
Off Switching Losses vs Ic
Off Switching Losses vs Tj
Swittching Off Safe Operating Area
STGB3NB60SD
6/8
Diode Forward vs Tj
Diode Forward Voltage
Fig. 1: Gate Charge test Circuit
Fig. 2 Test Circuit For Inductive Load Switching
Fig. 3: Switching Waveforms
7/8
STGB3NB60SD
D
2
PAK MECHANICAL DATA
DIM.
mm.
inch
MIN.
TYP
MAX.
MIN.
TYP.
MAX.
A
4.4
4.6
0.173
0.181
A1
2.49
2.69
0.098
0.106
A2
0.03
0.23
0.001
0.009
B
0.7
0.93
0.027
0.036
B2
1.14
1.7
0.044
0.067
C
0.45
0.6
0.017
0.023
C2
1.23
1.36
0.048
0.053
D
8.95
9.35
0.352
0.368
D1
8
0.315
E
10
10.4
0.393
E1
8.5
0.334
G
4.88
5.28
0.192
0.208
L
15
15.85
0.590
0.625
L2
1.27
1.4
0.050
0.055
L3
1.4
1.75
0.055
0.068
M
2.4
3.2
0.094
0.126
R
0.4
0.015
V2
0
8
STGB3NB60SD
8/8
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences
of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted
by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject
to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not
authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.
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