1/11
January 2005
STGF3NC120HD
N-CHANNEL 3A - 1200V TO-220FP
FAST PowerMESHTM IGBT with Integral Damper Diode
Table 1: General Features
s
LOW ON-VOLTAGE DROP (V
cesat
)
s
HIGH CURRENT CAPABILITY
s
OFF LOSSES INCLUDE TAIL CURRENT
s
HIGH SPEED
DESCRIPTION
This PowerMESHTM IGBT is designed using the
latest high voltage technology based on a patent-
ed strip layout. A new lifetime control allows good
switching performance and low voltage drop. This
IGBT featuring a co-packaged diode is optimized
for horizontal deflection applications in small and
medium sets.
APPLICATIONS
s
HORIZONTAL DEFLECTION
s
HOME APPLIANCE
s
LIGHTING
Table 2: Order Code
Figure 1: Package
Figure 2: Internal Schematic Diagram
TYPE
V
CES
V
CE(sat)
(Max)
@25C
I
C
@100C
STGF3NC120HD
1200 V
< 2.8
V
3 A
1
2
3
TO-220FP
PART NUMBER
MARKING
PACKAGE
PACKAGING
STGF3NC120HD
GF3NC120HD
TO-220FP
TUBE
Rev. 2
STGF3NC120HD
2/11
Table 3: Absolute Maximum ratings
( )
Pulse width limited by safe operating area
Table 4: Thermal Data
ELECTRICAL CHARACTERISTICS (T
CASE
=25C UNLESS OTHERWISE SPECIFIED)
Table 5: On/Off
Symbol
Parameter
Value
Unit
V
CES
Collector-Emitter Voltage (V
GS
= 0)
1200
V
V
ECR
Emitter-Collector Voltage
20
V
V
GE
Gate-Emitter Voltage
20
V
I
C
Collector Current (continuous) at T
C
= 25C
6
A
I
C
Collector Current (continuous) at T
C
= 100C
3
A
I
CM
( )
Collector Current (pulsed)
10
A
P
TOT
Total Dissipation at T
C
= 25C
25
W
Derating Factor
0.20
W/C
V
ISO
Insulation withstand voltage AC (t=1sec, Tc=25C)
2500
V
T
stg
Storage Temperature
55 to 150
C
T
j
Operating Junction Temperature range
Min.
Typ.
Max.
Rthj-case
Thermal Resistance Junction-case
5.0
C/W
Rthj-amb
Thermal Resistance Junction-ambient
62.5
C/W
T
L
Maximum Lead Temperature for Soldering Purpose (1.6 mm
from case, for 10 sec.)
300
C
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
V
BR(CES)
Collector-Emitter Breakdown
Voltage
I
C
= 1 mA, V
GE
= 0
1200
V
I
CES
Collector cut-off Current
(V
GE
= 0)
V
CE
= Max Rating, T
C
= 25 C
V
CE
= Max Rating, T
C
= 125 C
50
1
A
mA
I
GES
Gate-Emitter Leakage
Current (V
CE
= 0)
V
GE
= 20V , V
CE
= 0
100
nA
V
GE(th)
Gate Threshold Voltage
V
CE
= V
GE
, I
C
= 250 A
2
5
V
V
CE(sat)
Collector-Emitter Saturation
Voltage
V
GE
= 15V, I
C
= 3 A
V
GE
= 15V, I
C
= 3 A, Tc= 125C
2.3
2.2
2.8
V
V
3/11
STGF3NC120HD
ELECTRICAL CHARACTERISTICS (CONTINUED)
Table 6: Dynamic
(1) Pulsed: Pulse duration= 300 s, duty cycle 1.5%
Table 7: Switching On
Table 8: Switching Off
Table 9: Switching Energy
(2) Eon is the turn-on losses when a typical diode is used in the test circuit in figure 2. If the IGBT is offered in a package with a co-pack
diode, the co-pack diode is used as external diode. IGBTs & DIODE are at the same temperature (25C and 125C)
(3) Turn-off losses include also the tail of the collector current.
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
g
fs
(1)
Forward Transconductance
V
CE
= 25 V
,
I
C
= 3 A
4
S
C
ies
Input Capacitance
V
CE
= 25 V, f= 1 MHz, V
GE
= 0
470
pF
C
oes
Output Capacitance
45
pF
C
res
Reverse Transfer
Capacitance
6
pF
Q
g
Q
ge
Q
gc
Total Gate Charge
Gate-Emitter Charge
Gate-Collector Charge
V
CC
= 960 V, I
C
= 3 A,
V
GE
= 15 V
(see Figure 22)
24
3
10
32
nC
nC
nC
I
CL
Turn-off SOA minimum
current
V
clamp
= 960 V
,
Tj = 150C
R
G
= 10
,
V
GE
= 15 V
10
A
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
t
d(on)
t
r
(di/dt)
on
Turn-on Delay Time
Current Rise Time
Turn-on Current Slope
V
CC
= 800 V, I
C
= 3 A
R
G
= 10
, V
GE
= 15V, Tj= 25C
(see Figure 20)
15
3.5
880
ns
ns
A/s
t
d(on)
t
r
(di/dt)
on
Turn-on Delay Time
Current Rise Time
Turn-on Current Slope
V
CC
= 480 V, I
C
= 3 A
R
G
= 10
, V
GE
= 15V, Tj= 125C
(see Figure 20)
14.5
4
770
ns
ns
A/s
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
t
r
(V
off
)
Off Voltage Rise Time
V
cc
= 800 V, I
C
= 3 A,
R
G
= 10
, V
GE
= 15 V
T
J
= 25 C
(see Figure 20)
72
ns
t
d
(
off
)
Turn-off Delay Time
118
ns
t
f
Current Fall Time
250
ns
t
r
(V
off
)
Off Voltage Rise Time
V
cc
= 800 V, I
C
= 3 A,
R
G
= 10
, V
GE
= 15 V
Tj = 125 C
(see Figure 20)
132
ns
t
d
(
off
)
Turn-off Delay Time
210
ns
t
f
Current Fall Time
470
ns
Symbol
Parameterr
Test Conditions
Min.
Typ.
Max
Unit
Eon
(2)
E
off
(3)
E
ts
Turn-on Switching Losses
Turn-off Switching Loss
Total Switching Loss
V
CC
= 800 V, I
C
= 3 A
R
G
= 10
, V
GE
= 15V, Tj= 25C
(see Figure 21)
236
290
526
J
J
J
Eon
(2)
E
off
(3)
E
ts
Turn-on Switching Losses
Turn-off Switching Loss
Total Switching Loss
V
CC
= 800 V, I
C
= 3 A
R
G
= 10
, V
GE
= 15V, Tj= 125C
(see Figure 21)
360
620
980
J
J
J
STGF3NC120HD
4/11
Table 10: Collector-Emitter Diode
Symbol
Parameterr
Test Conditions
Min.
Typ.
Max
Unit
I
f
I
fm
Forward Current
Forward Current pulsed
3
12
A
A
V
f
Forward On-Voltage
If = 1.5 A
If = 1.5A, Tj = 125C
1.6
1.3
2.0
V
V
t
rr
Q
rr
I
rm
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
If = 3 A, V
R
= 40 V
Tj = 25C, di/dt = 100 A/s
(see Figure 23)
51
85
3.3
ns
nC
A
t
rr
Q
rr
I
rm
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
If = 3 A, V
R
= 40 V
Tj = 125C, di/dt = 100 A/s
(see Figure 23)
64
133
4.2
ns
nC
A
5/11
STGF3NC120HD
Figure 3: Output Characteristics
Figure 4: Transconductance
Figure 5: Collector-Emitter On Voltage vs Col-
lector Current
Figure 6: Transfer Characteristics
Figure 7: Collector-Emitter On Voltage vs Tem-
perature
Figure 8: Normalized Gate Threshold vs Tem-
perature
STGF3NC120HD
6/11
Figure 9: Normalized Breakdown Voltage vs
Temperature
Figure 10: Capacitance Variations
Figure 11: Switching Losses vs Gate Resis-
tance
Figure 12: Gate Charge vs Gate-Emitter Volt-
age
Figure 13: Switching Losses vs Temperature
Figure 14: Switching Losses vs Collector Cur-
rent
7/11
STGF3NC120HD
Figure 15: Thermal Impedance
Figure 16: Collector-Emitter Diode Character-
istics
Figure 17: Turn-Off SOA
Figure 18: Power Losses
Figure 19: Power Losses
STGF3NC120HD
8/11
Figure 20: Test Circuit for Inductive Load
Switching
Figure 21: Switching Waveforms
Figure 22: Gate Charge Test Circuit
Figure 23: Diode Recovery Time Waveforms
9/11
STGF3NC120HD
L2
A
B
D
E
H
G
L6
F
L3
G1
1 2 3
F2
F1
L7
L4
L5
DIM.
mm.
inch
MIN.
TYP
MAX.
MIN.
TYP.
MAX.
A
4.4
4.6
0.173
0.181
B
2.5
2.7
0.098
0.106
D
2.5
2.75
0.098
0.108
E
0.45
0.7
0.017
0.027
F
0.75
1
0.030
0.039
F1
1.15
1.7
0.045
0.067
F2
1.15
1.7
0.045
0.067
G
4.95
5.2
0.195
0.204
G1
2.4
2.7
0.094
0.106
H
10
10.4
0.393
0.409
L2
16
0.630
L3
28.6
30.6
1.126
1.204
L4
9.8
10.6
.0385
0.417
L5
2.9
3.6
0.114
0.141
L6
15.9
16.4
0.626
0.645
L7
9
9.3
0.354
0.366
3
3.2
0.118
0.126
TO-220FP MECHANICAL DATA
STGF3NC120HD
10/11
Table 11: Revision History
Date
Revision
Description of Changes
13-Dec-2004
1
First release
21-Jan-2005
2
Modified Curve 17
11/11
STGF3NC120HD
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences
of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted
by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject
to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not
authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.
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