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November 2002
STGP10NB60SDFP
N-CHANNEL 10A - 600V - TO-220FP
PowerMeshTM IGBT
(
q
) Pulse width limited by safe operating area
s
HIGHT INPUT IMPEDANCE (VOLTAGE
DRIVEN)
s
LOW ON-VOLTAGE DROP
s
HIGH CURRENT CAPABILITY
s
OFF LOSSES INCLUDE TAIL CURRENT
DESCRIPTION
Using the latest high voltage technology based on a
patented strip layout, STMicroelectronics has
designed an advanced family of IGBTs, the
PowerMESH
TM
IGBTs, with outstanding
performances. The suffix "S" identifies a family
optimized achieve minimum on-voltage drop for low
frequency applications (<1kHz).
APPLICATIONS
s
LIGHT DIMMER
s
STATIC RELAYS
s
MOTOR CONTROL
ABSOLUTE MAXIMUM RATINGS
TYPE
V
CES
V
CE(sat)
I
C
STGP10NB60SDFP
600
< 1.8
V
10 A
Symbol
Parameter
Value
Unit
V
CES
Collector-Emitter Voltage (V
GS
= 0)
600
V
V
ECR
Reverse Battery Protection
20
V
V
GE
Gate-Emitter Voltage
20
V
I
C
Collector Current (continuous) at T
C
= 25C
20
A
I
C
Collector Current (continuous) at T
C
= 100C
10
A
I
CM
( )
Collector Current (pulsed)
80
A
P
TOT
Total Dissipation at T
C
= 25C
30
W
Derating Factor
0.2
W/C
V
ISO
Insulation Withstand Voltage A.C.(t = 1 sec; Tc = 25C)
2500
V
T
stg
Storage Temperature
65 to 150
C
T
j
Max. Operating Junction Temperature
175
C
TO-220FP
1
2
3
INTERNAL SCHEMATIC DIAGRAM
STGP10NB60SDFP
2/8
THERMAL DATA
ELECTRICAL CHARACTERISTICS (T
CASE
= 25 C UNLESS OTHERWISE SPECIFIED)
OFF
ON (1)
DYNAMIC
Rthj-case
Thermal Resistance Junction-case Max
5
C/W
Rthj-amb
Thermal Resistance Junction-ambient Max
62.5
C/W
Rthc-sink
Thermal Resistance Case-sink Typ
0.5
C/W
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
V
BR(CES)
Collector-Emitter Break-down
Voltage
I
C
= 250 A, V
GE
= 0,
600
V
V
BR(CES)
Emitter Collector Break-down
Voltage
I
C
= 1 mA, V
GE
= 0,
20
V
I
CES
Collector cut-off Current
(V
GE
= 0)
V
CE
= Max Rating ,T
j
=25 C
V
CE
= Max Rating ,T
j
=125 C
10
100
A
A
I
GES
Gate-Emitter Leakage
Current (V
CE
= 0)
V
GE
= 20V , V
CE
= 0
100
nA
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
V
GE(th)
Gate Threshold Voltage
V
CE
= V
GE
, I
C
= 250A
2.5
5
V
V
CE(SAT)
Collector-Emitter Saturation
Voltage
V
GE
=15V, I
C
= 5 A, Tj= 25C
V
GE
=15V, I
C
= 10 A, Tj= 25C
V
GE
=15V, I
C
= 10 A, Tj= 125C
1.15
1.35
1.25
1.8
V
V
V
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
g
fs
Forward Transconductance
V
CE
= 25 V
,
I
C
=10 A
5
S
C
ies
C
oes
C
res
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
V
CE
= 25V, f = 1 MHz, V
GE
= 0
610
65
12
pF
pF
pF
Q
g
Gate Charge
V
CE
= 400V, I
C
= 10 A,
V
GE
= 15V
33
nC
I
CL
Latching Current
V
clamp
= 480V, RG= 1k
,
Tj= 125C
20
A
3/8
STGP10NB60SDFP
Switching Off Safe Operating Area
SWITCHING ON
SWITCHING OFF
COLLECTOR-EMITTER DIODE
(
q
)Pulsed: Pulse duration = 300
s, duty cycle 1.5 %.
(1)Pulse width limited by max. junction temperature.
(**)Losses Include Also the Tail
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
t
d(on)
Turn-on Delay Time
V
CC
= 480 V, I
C
= 10 A
R
G
= 1K
, V
GE
= 15 V
0.7
s
t
r
Rise Time
0.46
s
(di/dt)
on
Eon
Turn-on Current Slope
Turn-on Switching Losses
V
CC
= 480 V, I
C
= 10 A
R
G
=1K
, V
GE
= 15 V
8
0.6
A/s
mJ
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
t
c
Cross-over Time
V
clamp
= 480 V, I
C
= 10 A,
R
GE
= 1K
, V
GE
= 15 V
2.2
s
t
r
(V
off
)
Off Voltage Rise Time
1.2
s
t
f
Fall Time
1.2
s
E
off
(**)
Turn-off Switching Loss
5.0
mJ
t
c
Cross-over Time
V
clamp
= 480 V, I
C
= 10 A,
R
GE
= 1K
, V
GE
= 15 V
Tj = 125 C
3.8
s
t
r
(V
off
)
Off Voltage Rise Time
1.2
s
t
f
Fall Time
1.9
s
E
off
(**)
Turn-off Switching Loss
8.0
mJ
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
I
f
I
fm
Forward Current
Forward Current pulsed
7
56
A
A
V
f
Forward On-Voltage
I
f
= 3.5 A
I
f
= 3.5 A, Tj = 125 C
1.4
1.15
1.9
V
V
t
rr
Q
rr
I
rrm
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
I
f
= 7 A ,V
R
= 35 V,
Tj =125C, di/dt = 100A/
s
50
70
2.7
ns
nC
A
Thermal Impedance
STGP10NB60SDFP
4/8
Gate Threshold Voltage vs Temperature
Transconductance
Transfer Characteristics
Output Characteristics
Collector-Emitter On Voltage vs Temperature
Collector-Emitter On Voltage vs Collector Cur-
rent
5/8
STGP10NB60SDFP
Off Losses vs Gate Resistance
Off Losses vs Collector Current
Gate Charge vs Gate-Emitter Voltage
Capacitance Variations
Normalized Break-down Voltage vs Temp.
Off Losses vs Temperature
STGP10NB60SDFP
6/8
Emitter-Collector Diode Characteristics
Fig. 2: Test Circuit For Inductive Load Switching
Fig. 1: Gate Charge test Circuit
7/8
STGP10NB60SDFP
L2
A
B
D
E
H
G
L6
F
L3
G1
1 2 3
F2
F1
L7
L4
L5
DIM.
mm.
inch
MIN.
TYP
MAX.
MIN.
TYP.
MAX.
A
4.4
4.6
0.173
0.181
B
2.5
2.7
0.098
0.106
D
2.5
2.75
0.098
0.108
E
0.45
0.7
0.017
0.027
F
0.75
1
0.030
0.039
F1
1.15
1.5
0.045
0.067
F2
1.15
1.5
0.045
0.067
G
4.95
5.2
0.195
0.204
G1
2.4
2.7
0.094
0.106
H
10
10.4
0.393
0.409
L2
16
0.630
L3
28.6
30.6
1.126
1.204
L4
9.8
10.6
.0385
0.417
L5
2.9
3.6
0.114
0.141
L6
15.9
16.4
0.626
0.645
L7
9
9.3
0.354
0.366
3
3.2
0.118
0.126
TO-220FP MECHANICAL DATA
STGP10NB60SDFP
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Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the
consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from
its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications
mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information
previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or
systems without express written approval of STMicroelectronics.
The ST logo is a registered trademark of STMicroelectronics
2002 STMicroelectronics - Printed in Italy - All Rights Reserved
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