1/9
July 2003
STGP12NB60HD
N-CHANNEL 12A - 600V
TO-220
PowerMESHTM IGBT
s
HIGH INPUT IMPEDANCE
s
LOW ON-VOLTAGE DROP (V
cesat
)
s
OFF LOSSES INCLUDE TAIL CURRENT
s
LOW GATE CHARGE
s
HIGH CURRENT CAPABILITY
s
VERY HIGH FREQUENCY OPERATION
s
CO-PACKAGED WITH TURBOSWITCHT
s
ANTIPARALLEL DIODE
DESCRIPTION
Using the latest high voltage technology based on a
patented strip layout, STMicroelectronics has de-
signed an advanced family of IGBTs, the Power-
MESHTM IGBTs, with outstanding perfomances.
The suffix "H" identifies a family optimized for high
frequency applications (up to 50kHz)in order to
achieve very high switching performances (reduced
tfall) mantaining a low voltage drop.
APPLICATIONS
s
HIGH FREQUENCY MOTOR CONTROLS
s
SMPS and PFC IN BOTH HARD SWITCH AND
RESONANT TOPOLOGIES
s
UPS
ABSOLUTE MAXIMUM RATINGS
( )
Pulse width limited by safe operating area
TYPE
V
CES
V
CE(sat)
I
C
STGP12NB60HD
600 V
< 2.8
V
12 A
Symbol
Parameter
Value
Unit
V
CES
Collector-Emitter Voltage (V
GS
= 0)
600
V
V
ECR
Emitter-Collector Voltage
20
V
V
GE
Gate-Emitter Voltage
20
V
I
C
Collector Current (continuous) at T
C
= 25C
24
A
I
C
Collector Current (continuous) at T
C
= 100C
12
A
I
CM
( )
Collector Current (pulsed)
96
A
P
TOT
Total Dissipation at T
C
= 25C
100
W
Derating Factor
0.8
W/C
T
stg
Storage Temperature
65 to 150
C
T
j
Max. Operating Junction Temperature
150
C
TO-220
1
2
3
INTERNAL SCHEMATIC DIAGRAM
STGP12NB60HD
2/9
THERMAL DATA
ELECTRICAL CHARACTERISTICS (T
CASE
= 25 C UNLESS OTHERWISE SPECIFIED)
OFF
ON (1)
DYNAMIC
SWITCHING ON
Rthj-case
Thermal Resistance Junction-case Max
1.25
C/W
Rthj-amb
Thermal Resistance Junction-ambient Max
62.5
C/W
Rthc-sink
Thermal Resistance Case-sink Typ
0.5
C/W
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
V
BR(CES)
Collector-Emitter Breakdown
Voltage
I
C
= 250 A, V
GE
= 0
600
V
I
CES
Collector cut-off
(V
GE
= 0)
V
CE
= Max Rating, T
C
= 25 C
10
A
V
CE
= Max Rating, T
C
= 125 C
100
A
I
GES
Gate-Emitter Leakage
Current (V
CE
= 0)
V
GE
= 20V , V
CE
= 0
100
nA
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
V
GE(th)
Gate Threshold Voltage
V
CE
= V
GE
, I
C
= 250 A
3
5
V
V
CE(sat)
Collector-Emitter Saturation
Voltage
V
GE
= 15V, I
C
= 12 A
2.0
2.8
V
V
GE
= 15V, I
C
= 12 A, Tj =125C
1.7
V
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
g
fs
Forward Transconductance
V
CE
= 15 V
,
I
C
= 12 A
10
S
C
ies
Input Capacitance
V
CE
= 25V, f = 1 MHz, V
GE
= 0
920
pF
C
oes
Output Capacitance
120
pF
C
res
Reverse Transfer
Capacitance
27
pF
Q
g
Q
ge
Q
gc
Total Gate Charge
Gate-Emitter Charge
Gate-Collector Charge
V
CE
= 480V, I
C
= 12 A,
V
GE
= 15V
68
10
30
nC
nC
nC
I
CL
Latching Current
V
clamp
= 480 V
,
Tj = 150C
R
G
= 10
48
A
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
t
d(on)
t
r
Turn-on Delay Time
Rise Time
V
CC
= 480 V, I
C
= 12 A
R
G
= 10
, V
GE
= 15 V
5
46
ns
ns
(di/dt)
on
Eon
Turn-on Current Slope
Turn-on Switching Losses
V
CC
= 480 V, I
C
= 12 A
R
G
=10
,
V
GE
= 15 V,
Tj =125C
800
290
A/s
J
3/9
STGP12NB60HD
ELECTRICAL CHARACTERISTICS (CONTINUED)
SWITCHING OFF
COLLECTOR-EMITTER DIODE
Note: 1. Pulsed: Pulse duration = 300 s, duty cycle 1.5 %.
2. Pulse width limited by max. junction temperature.
(**)Losses include Also the Tail (Jedec Standardization)
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
t
c
Cross-over Time
V
cc
= 480 V, I
C
= 12A,
R
GE
= 10
, V
GE
= 15 V
150
ns
t
r
(V
off
)
Off Voltage Rise Time
27
ns
t
d
(
off
)
Delay Time
76
ns
t
f
Fall Time
92
ns
E
off
(**)
Turn-off Switching Loss
0.21
m
J
E
ts
Total Switching Loss
0.49
m
J
t
c
Cross-over Time
V
cc
= 480 V, I
C
= 12 A,
R
GE
= 10
, V
GE
= 15 V
Tj = 125 C
230
ns
t
r
(V
off
)
Off Voltage Rise Time
76
ns
t
d
(
off
)
Delay Time
95
ns
t
f
Fall Time
200
ns
E
off
(**)
Turn-off Switching Loss
0.45
m
J
E
ts
Total Switching Loss
0.74
m
J
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
I
f
I
fm
Forward Current
Forward Current pulsed
12
48
A
A
V
f
Forward On-Voltage
I
f
= 6 A
I
f
= 6 A, Tj = 125 C
1.3
1.1
1.9
V
V
t
rr
Q
rr
I
rrm
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
I
f
= 6 A ,V
R
= 50 V,
Tj = 125C, di/dt = 100 A/
s
80
240
5.5
ns
nC
A
Thermal Impedance
STGP12NB60HD
4/9
Transfer Characteristics
Output Characteristics
Transconductance
Collector-Emitter On Voltage vs Collettor Current
Collector-Emitter On Voltage vs Temperature
Gate Threshold vs Temperature
5/9
STGP12NB60HD
Normalized Breakdown Voltage vs Temperature
Total Switching Losses vs Temperature
Total Switching Losses vs Gate Resistance
Gate Charge vs Gate-Emitter Voltage
Capacitance Variations
Total Switching Losses vs Collector Current
STGP12NB60HD
6/9
Diode Forward Voltage
Switching Off Safe Operating Area
7/9
STGP12NB60HD
Fig. 2: Test Circuit For Inductive Load Switching
Fig. 1: Gate Charge test Circuit
STGP12NB60HD
8/9
DIM.
mm.
inch
MIN.
TYP
MAX.
MIN.
TYP.
MAX.
A
4.40
4.60
0.173
0.181
b
0.61
0.88
0.024
0.034
b1
1.15
1.70
0.045
0.066
c
0.49
0.70
0.019
0.027
D
15.25
15.75
0.60
0.620
E
10
10.40
0.393
0.409
e
2.40
2.70
0.094
0.106
e1
4.95
5.15
0.194
0.202
F
1.23
1.32
0.048
0.052
H1
6.20
6.60
0.244
0.256
J1
2.40
2.72
0.094
0.107
L
13
14
0.511
0.551
L1
3.50
3.93
0.137
0.154
L20
16.40
0.645
L30
28.90
1.137
P
3.75
3.85
0.147
0.151
Q
2.65
2.95
0.104
0.116
TO-220 MECHANICAL DATA
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STGP12NB60HD
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the
consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from
its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications
mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information
previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or
systems without express written approval of STMicroelectronics.
The ST logo is a registered trademark of STMicroelectronics
2003 STMicroelectronics - Printed in Italy - All Rights Reserved
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