STGP20NB37LZ
N-CHANNEL CLAMPED 20A TO-220
INTERNALLY CLAMPED PowerMESH
TM
IGBT
PRELIMINARY DATA
s
POLYSILICON GATE VOLTAGE DRIVEN
s
LOW THRESHOLD VOLTAGE
s
LOW ON-VOLTAGE DROP
s
HIGH CURRENT CAPABILITY
s
HIGH VOLTAGE CLAMPING FEATURE
DESCRIPTION
Using the latest high voltage technology based
on patented strip layout, STMicroelectronics has
designed an advanced family of IGBTs with
outstanding performances.
The built in collector-gate zener exhibits a very
precise active clamping while the gate-emitter
zener supplies an ESD protection.
APPLICATIONS
s
AUTOMOTIVE IGNITION
INTERNAL SCHEMATIC DIAGRAM
April 2000
ABSOLUTE MAXIMUM RATINGS
Symb ol
Parameter
Value
Un it
V
CES
Collect or-Emitter Voltage (V
GS
= 0)
CLAMPED
V
V
ECR
Reverse Battery Protection
20
V
V
GE
Gate-Emitt er Volt age
CLAMPED
V
I
C
Collect or Current (continuous) at T
c
= 25
o
C
40
A
I
C
Collect or Current (continuous) at T
c
= 100
o
C
30
A
I
CM
(
)
Collect or Current (pulsed)
80
A
E
AS
Single Pulse Energy Tc = 25
o
C
700
mJ
P
tot
T otal Dissipation at T
c
= 25
o
C
150
W
Derat ing Factor
1
W /
o
C
E
SD
ESD (Human Body Model)
4
KV
T
s tg
St orage Temperature
-65 t o 175
o
C
T
j
Max. O perating Junction Temperature
175
o
C
(
) Pulse width limited by safe operating area
TYPE
V
CES
V
CE(s at)
I
C
STGP20NB37LZ
CLAMPED
< 2.0 V
20 A
1
2
3
TO-220
1/6
THERMAL DATA
R
thj -case
R
thj -amb
R
thc-sink
Thermal Resistance Junction-case
Max
Thermal Resistance Junction-ambient
Max
Thermal Resistance Case-sink
T yp
1
62. 5
0.2
o
C/W
o
C/W
o
C/W
ELECTRICAL CHARACTERISTICS (T
j
= 25
o
C unless otherwise specified)
OFF
Symbo l
Parameter
Test Con ditions
Min.
Typ.
Max.
Unit
BV
(CES)
Clamped Voltage
I
C
=2mA
V
GE
= 0
T
C
= - 40
o
C
I
C
=2mA
V
GE
= 0
T
C
=
25
o
C
I
C
=2mA
V
GE
= 0
T
C
= 150
o
C
380
375
370
405
400
395
430
425
420
V
V
V
BV
(ECR)
Emitter Collector
Break-down Voltage
I
C
= 75 mA
T
C
=
25
o
C
20
28
V
BV
GE
Gat e Emitter
Break-down Voltage
I
G
=
2 mA
12
14
16
V
I
CES
Collector cut-of f
Current (VGE = 0)
V
CE
= 15 V
V
GE
= 0
T
C
= 150
o
C
V
CE
= 200 V
V
GE
= 0
T
C
= 150
o
C
10
100
A
A
I
G ES
Gat e-Emitter Leakage
Current (VCE = 0)
V
GE
=
10 V
V
CE
= 0
300
660
1000
A
R
G E
Gat e Emitter Resistanc e
10
15
30
K
ON (
)
Symbo l
Parameter
Test Con ditions
Min.
Typ.
Max.
Unit
V
G E(th)
Gat e Threshold
Voltage
V
CE
= V
GE
I
C
= 250
A
T
C
= - 40
o
C
V
CE
= V
GE
I
C
= 250
A
T
C
=
25
o
C
V
CE
= V
GE
I
C
= 250
A
T
C
= 150
o
C
1. 2
1. 0
0. 6
1.4
2
V
V
V
V
CE(SAT )
Collector-Emitt er
Sat uration Voltage
V
GE
= 4. 5 V
I
C
= 10 A
T
C
=
25
o
C
V
GE
= 4. 5 V
I
C
= 10 A
T
C
= 150
o
C
V
GE
= 4. 5 V
I
C
= 20 A
T
C
=
25
o
C
V
GE
= 4. 5 V
I
C
= 20 A
T
C
= 150
o
C
1.1
1.0
1.35
1.25
1. 8
1. 7
2. 0
2. 0
V
V
V
V
DYNAMIC
Symbo l
Parameter
Test Con ditions
Min.
Typ.
Max.
Unit
g
f s
Forward
Transconductance
V
CE
= 25 V
I
C
= 20 A
35
S
C
i es
C
o es
C
res
Input Capacitance
Out put Capacitance
Reverse Transfer
Capacitance
V
CE
= 25 V
f = 1 MHz
V
GE
= 0
2300
165
28
pF
pF
pF
Q
G
Gat e Charge
V
CE
= 280 V
I
C
= 20 A
V
GE
= 5 V
51
nC
STGP20NB37LZ
2/6
FUNCTIONAL CHARACTERISTICS
Symbo l
Parameter
Test Con ditions
Min.
Typ.
Max.
Unit
II
Lat ching Current
V
CLAM P
= 250 V
V
GE
= 4.5 V
R
G OF F
= 1 K
T
C
= 150
o
C
80
A
U.I. S.
Functional Test
Open Secondary Coil
R
G OF F
=1 K
L =3 mH
T
C
=
25
o
C
R
G OF F
=1 K
L =3 mH
T
C
= 150
o
C
21. 6
15
26
18
A
A
SWITCHING ON
Symbo l
Parameter
Test Con ditions
Min.
Typ.
Max.
Unit
t
d(on)
t
r
Delay Time
Rise Time
V
CC
= 250 V
I
C
= 20 A
V
GE
= 4.5 V
R
G
= 1 K
2.3
0.6
s
s
(di/dt)
on
Turn-on Current Slope
V
CC
= 250 V
I
C
= 20 A
R
G
= 1 K
V
GE
= 4. 5 V
550
A/
s
E
o n
Turn-on
Switching Losses
V
CC
=250V
I
C
=20A
T
C
=
25
o
C
R
G
=1 K
V
G E
=4.5V
T
C
= 150
o
C
8.8
9.2
mJ
mJ
SWITCHING OFF
Symbo l
Parameter
Test Con ditions
Min.
Typ.
Max.
Unit
t
c
t
r
(v
off
)
t
f
t
d
(
o ff
)
E
o ff
(**)
Cross-O ver Time
Off Volt age Rise Time
Fall T ime
Off Volt age Delay Time
Turn-off Swit ching Loss
V
CC
= 250 V
I
C
= 20 A
R
G E
= 1 K
V
GE
= 4.5 V
4.8
2.6
2.0
11.5
11.8
s
s
s
s
mJ
t
c
t
r
(v
off
)
t
f
t
d
(
o ff
)
E
o ff
(**)
Cross-O ver Time
Off Volt age Rise Time
Fall T ime
Off Volt age Delay Time
Turn-off Swit ching Loss
V
CC
= 250 V
I
C
= 20 A
R
G E
= 1 K
V
GE
= 4.5 V
T
C
= 150
o
C
7.8
3.5
3.9
12.0
17.8
s
s
s
s
mJ
(
) Pulse width limited by safe operating area
(*) Pulsed: Pulse duration = 300 ms, duty cycle 1.5 %
(**)Losses Include Also The Tail (jedec Standardization)
STGP20NB37LZ
3/6
Fig. 1: Unclamped Inductive Load Test Circuit
Fig. 2: Unclamped Inductive Waveform
Fig. 3: Switching Times Test Circuits For
Resistive Load
Fig. 4: Gate Charge test Circuit
Fig. 5: Test Circuit For Inductive Load Switching
And DIode Recovery Times
STGP20NB37LZ
4/6
DIM.
mm
inch
MIN.
TYP.
MAX.
MIN.
TYP.
MAX.
A
4.40
4.60
0.173
0.181
C
1.23
1.32
0.048
0.051
D
2.40
2.72
0.094
0.107
D1
1.27
0.050
E
0.49
0.70
0.019
0.027
F
0.61
0.88
0.024
0.034
F1
1.14
1.70
0.044
0.067
F2
1.14
1.70
0.044
0.067
G
4.95
5.15
0.194
0.203
G1
2.4
2.7
0.094
0.106
H2
10.0
10.40
0.393
0.409
L2
16.4
0.645
L4
13.0
14.0
0.511
0.551
L5
2.65
2.95
0.104
0.116
L6
15.25
15.75
0.600
0.620
L7
6.2
6.6
0.244
0.260
L9
3.5
3.93
0.137
0.154
DIA.
3.75
3.85
0.147
0.151
L6
A
C
D
E
D1
F
G
L7
L2
Dia.
F1
L5
L4
H2
L9
F2
G1
TO-220 MECHANICAL DATA
P011C
STGP20NB37LZ
5/6
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences
of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is
granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are
subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products
are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.
The ST logo is a trademark of STMicroelectronics
2000 STMicroelectronics Printed in Italy All Rights Reserved
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