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May 2003
STGW20NB60K
N-CHANNEL 20A - 600V
- TO-247
SHORT CIRCUIT PROOF PowerMESHTM IGBT
s
HIGH INPUT IMPEDANCE (VOLTAGE DRIVEN)
s
LOW ON-VOLTAGE DROP (V
cesat
)
s
LOW ON-LOSSES
s
LOW GATE CHARGE
s
HIGH CURRENT CAPABILITY
s
OFF LOSSES INCLUDE TAIL CURRENT
s
VERY HIGH FREQUENCY OPERATION
s
SHORT CIRCUIT RATED
s
LATCH CURRENT FREE OPERATION
DESCRIPTION
Using the latest high voltage technology based on a
patented strip layout, STMicroelectronics has
designed an advanced family of IGBTs, the
PowerMESH
TM
IGBTs, with outstanding
performances. The suffix "K" identifies a family
optimized for high frequency motor control
applications with short circuit withstand capability.
APPLICATIONS
s
HIGH FREQUENCY MOTOR CONTROLS
s
U.P.S.
s
WELDING EQUIPMENTS
ABSOLUTE MAXIMUM RATINGS
TYPE
V
CES
V
CE(sat)
I
C
STGW20NB60K
600 V
< 2.8
V
20 A
Symbol
Parameter
Value
Unit
V
CES
Collector-Emitter Voltage (V
GS
= 0)
600
V
V
ECR
Emitter-Collector Voltage
20
V
V
GE
Gate-Emitter Voltage
20
V
I
C
Collector Current (continuos) at T
C
= 25C
40
A
I
C
Collector Current (continuos) at T
C
= 100C
20
A
I
CM
( )
Collector Current (pulsed)
80
A
Tsc
Short Circuit Withstand
10
s
P
TOT
Total Dissipation at T
C
= 25C
150
W
Derating Factor
1
W/C
T
stg
Storage Temperature
65 to 150
C
T
j
Max. Operating Junction Temperature
150
C
TO-247
1
2
3
INTERNAL SCHEMATIC DIAGRAM
STGW20NB60K
2/8
THERMAL DATA
ELECTRICAL CHARACTERISTICS (TCASE = 25 C UNLESS OTHERWISE SPECIFIED)
OFF
ON (1)
DYNAMIC
SWITCHING ON
Rthj-case
Thermal Resistance Junction-case Max
0.83
C/W
Rthj-amb
Thermal Resistance Junction-ambient Max
62.5
C/W
Rthc-h
Thermal Resistance Case-heatsink Typ
0.5
C/W
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
V
BR(CES)
Collectro-Emitter Breakdown
Voltage
I
C
= 250 A, V
GE
= 0
600
V
I
CES
Collector cut-off
(V
GE
= 0)
V
CE
= Max Rating, T
C
= 25 C
10
A
V
CE
= Max Rating, T
C
= 125 C
100
A
I
GES
Gate-Emitter Leakage
Current (V
CE
= 0)
V
GE
= 20V , V
CE
= 0
100
nA
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
V
GE(th)
Gate Threshold Voltage
V
CE
= V
GE
, I
C
= 250A
5
7
V
V
CE(sat)
Collector-Emitter Saturation
Voltage
V
GE
= 15V, I
C
= 20 A
2.3
2.8
V
V
GE
= 15V, I
C
= 20 A, Tj =125C
1.9
V
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
g
fs
Forward Transconductance
V
CE
= 25 V
,
I
C
=20 A
8
S
C
ies
Input Capacitance
V
CE
= 25V, f = 1 MHz, V
GE
= 0
1300
pF
C
oes
Output Capacitance
200
pF
C
res
Reverse Transfer
Capacitance
30
pF
Q
g
Total Gate Charge
V
CE
= 480V, I
C
= 20 A,
V
GE
= 15V
90
nC
Q
ge
Gate-Emitter Charge
T.B.D.
nC
Q
gc
Gate-Collector Charge
T.B.D.
nC
tscw
Short Circuit Withstand Time
V
ce
= 0.5 BVces , V
GE
= 15 V
,
Tj = 125C , R
G
= 10
10
s
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
t
d(on)
Turn-on Delay Time
V
CC
= 480 V, I
C
= 20 A
R
G
= 10
, V
GE
= 15 V
20
ns
t
r
Rise Time
70
ns
(di/dt)
on
Turn-on Current Slope
V
CC
= 480 V, I
C
= 20 A R
G
=10
V
GE
= 15 V,Tj = 125C
350
A/s
Eon
Turn-on Switching Losses
300
J
3/8
STGW20NB60K
ELECTRICAL CHARACTERISTICS (CONTINUED)
SWITCHING OFF
Note: 1. Pulsed: Pulse duration = 300 s, duty cycle 1.5 %.
2. Pulse width limited by max. junction temperature.
(**)Losses include Also the Tail (Jedec Standardization)
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
t
c
Cross-over Time
V
cc
= 480 V, I
C
= 20 A,
R
GE
= 10
, V
GE
= 15 V
120
ns
t
r
(V
off
)
Off Voltage Rise Time
35
ns
t
d
(
off
)
Delay Time
130
ns
t
f
Fall Time
80
ns
E
off
(**)
Turn-off Switching Loss
0.45
mJ
E
ts
Total Switching Loss
0.6
mJ
t
c
Cross-over Time
V
cc
= 480 V, I
C
= 20 A,
R
GE
= 10
, V
GE
= 15 V
Tj = 125 C
190
ns
t
r
(V
off
)
Off Voltage Rise Time
55
ns
t
d
(
off
)
Delay Time
160
ns
t
f
Fall Time
150
ns
E
off
(**)
Turn-off Switching Loss
0.75
mJ
E
ts
Total Switching Loss
1.05
mJ
STGW20NB60K
4/8
Transfer Characteristics
Normalized Gate Threshold Voltage vs Temp.
Transconductance
Output Characteristics
Switching Off Safe Operating Area
Thermal Impedance
5/8
STGW20NB60K
Turn-Off Energy Losses vs Temperature
Collector-Emitter On Voltage vs Temperature
Collector-Emitter
on
Voltage
vs
Collector
Current
Capacitance Variations
Normalized Break-down Voltage vs Temp.
Gate-Charge vs Gate-Emitter Voltage
STGW20NB60K
6/8
Fig. 2: Test Circuit For Inductive Load Switching
Fig. 1: Gate Charge test Circuit
7/8
STGW20NB60K
DIM.
mm.
inch
MIN.
TYP
MAX.
MIN.
TYP.
MAX.
A
4.85
5.15
0.19
0.20
D
2.20
2.60
0.08
0.10
E
0.40
0.80
0.015
0.03
F
1
1.40
0.04
0.05
F1
3
0.11
F2
2
0.07
F3
2
2.40
0.07
0.09
F4
3
3.40
0.11
0.13
G
10.90
0.43
H
15.45
15.75
0.60
0.62
L
19.85
20.15
0.78
0.79
L1
3.70
4.30
0.14
0.17
L2
18.50
0.72
L3
14.20
14.80
0.56
0.58
L4
34.60
1.36
L5
5.50
0.21
M
2
3
0.07
0.11
V
5
5
V2
60
60
Dia
3.55
3.65
0.14
0.143
TO-247 MECHANICAL DATA
STGW20NB60K
8/8
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the
consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from
its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications
mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information
previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or
systems without express written approval of STMicroelectronics.
The ST logo is a registered trademark of STMicroelectronics
2003 STMicroelectronics - Printed in Italy - All Rights Reserved
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