1/11
July 2004
STGP20NC60V
STGW20NC60V
N-CHANNEL 30A - 600V - TO-220/TO-247
Very Fast PowerMESHTM IGBT
Table 1: General Features
s
OFF LOSSES INCLUDE TAIL CURRENT
s
LOSSES INCLUDE DIODE RECOVERY
ENERGY
s
HIGH CURRENT CAPABILITY
s
HIGH FREQUENCY OPERATION UP TO 50
KHz
s
LOWER C
RES
/ C
IES
RATIO
s
NEW GENERATION PRODUCTS WITH
TIGHTER PARAMETER DISTRUBUTION
DESCRIPTION
Using the latest high voltage technology based on
a patented strip layout, STMicroelectronics has
designed an advanced family of IGBTs, the Pow-
erMESH
TM
IGBTs, with outstanding performances.
The suffix "V" identifies a family optimized for high
frequency.
APPLICATIONS
s
HIGH FREQUENCY INVERTERS
s
SMPS and PFC IN BOTH HARD SWITCH AND
RESONANT TOPOLOGIES
s
UPS
s
MOTOR DRIVERS
Table 2: Order Codes
Figure 1: Package
Figure 2: Internal Schematic Diagram
TYPE
V
CES
V
CE(sat)
(Max)
@25C
I
C
@100C
STGP20NC60V
STGW20NC60V
600 V
600 V
< 2.5 V
< 2.5 V
30 A
30 A
1
2
3
1
2
3
TO-247
Weight for TO-220: 1.92gr 0.01
Max Clip Pressure: 150 N/mm
2
TO-220
Weight for TO-247: 4.41gr 0.01
SALES TYPE
MARKING
PACKAGE
PACKAGING
STGP20NC60V
GP20NC60V
TO-220
TUBE
STGW20NC60V
GW20NC60V
TO-247
TUBE
Rev. 4
STGP20NC60V - STGW20NC60V
2/11
Table 3: Absolute Maximum ratings
(1)Pulse width limited by max. junction temperature.
Table 4: Thermal Data
ELECTRICAL CHARACTERISTICS (T
CASE
=25C UNLESS OTHERWISE SPECIFIED)
Table 5: Off
Table 6: On
(#) Calculated according to the iterative formula:
Symbol
Parameter
Value
Symbol
V
CES
Collector-Emitter Voltage (V
GS
= 0)
600
V
V
ECR
Reverse Battery Protection
20
V
V
GE
Gate-Emitter Voltage
20
V
I
C
Collector Current (continuous) at 25C (#)
60
A
I
C
Collector Current (continuous) at 100C (#)
30
A
I
CM
(1)
Collector Current (pulsed)
100
A
P
TOT
Total Dissipation at T
C
= 25C
200
W
Derating Factor
1.6
W/C
T
stg
Storage Temperature
55 to 150
C
T
j
Operating Junction Temperature
Min.
Typ.
Max.
Rthj-case
Thermal Resistance Junction-case
0.625
C/W
Rthj-amb
Thermal Resistance Junction-ambient
TO-220
62.5
C/W
TO-247
50
T
L
Maximum Lead Temperature for Soldering
Purpose (1.6 mm from case, for 10 sec.)
300
C
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
V
BR(CES)
Collectro-Emitter Breakdown
Voltage
I
C
= 1 mA, V
GE
= 0
600
V
I
CES
Collector-Emitter Leakage
Current (V
CE
= 0)
V
GE
= Max Rating
Tc=25C
Tc=125C
10
1
A
mA
I
GES
Gate-Emitter Leakage
Current (V
CE
= 0)
V
GE
= 20 V , V
CE
= 0
100
nA
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
V
GE(th)
Gate Threshold Voltage
V
CE
= V
GE
, I
C
= 250 A
3.75
5.75
V
V
CE(SAT)
Collector-Emitter Saturation
Voltage
V
GE
= 15 V, I
C
= 20A, Tj= 25C
V
GE
= 15 V, I
C
= 20A,
Tj= 125C
1.8
1.7
2.5
V
V
I
C
T
C
(
)
T
J MAX
T
C
R
THJ
C
V
CE SAT M AX
(
)
T
C
I
C
,
(
)
--------------------------------------------------------------------------------------------------
=
3/11
STGP20NC60V - STGW20NC60V
ELECTRICAL CHARACTERISTICS (CONTINUED)
Table 7: Dynamic
Table 8: Switching On
2) Eon is the turn-on losses when a typical diode is used in the test circuit in figure 2. If the IGBT is offered in a package with a co-pack diode,
the co-pack diode is used as external diode. IGBTs & DIODE are at the same temperature (25C and 125C)
Table 9: Switching Off
(3)Turn-off losses include also the tail of the collector current.
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
g
fs
(1)
Forward Transconductance
V
CE
= 15 V
,
I
C
= 20 A
15
S
C
ies
C
oes
C
res
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
V
CE
= 25V, f = 1 MHz, V
GE
= 0
2200
225
50
pF
pF
pF
Q
g
Q
ge
Q
gc
Total Gate Charge
Gate-Emitter Charge
Gate-Collector Charge
V
CE
= 390 V, I
C
= 20 A,
V
GE
= 15V,
(see Figure 20)
100
16
45
140
nC
nC
nC
I
CL
Turn-Off SOA Minimum
Current
V
clamp
= 480 V
,
Tj = 150C
R
G
= 10
,
V
GE
= 15V
100
A
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
t
d(on)
t
r
(di/dt)
on
Eon
(2)
Turn-on Delay Time
Current Rise Time
Turn-on Current Slope
Turn-on Switching Losses
V
CC
= 390 V, I
C
= 20 A
R
G
= 3.3
, V
GE
= 15V, Tj= 25C
(see Figure 18)
31
11
1600
220
300
ns
ns
A/s
J
t
d(on)
t
r
(di/dt)
on
Eon
(2)
Turn-on Delay Time
Current Rise Time
Turn-on Current Slope
Turn-on Switching Losses
V
CC
= 390 V, I
C
= 20 A
R
G
= 3.3
, V
GE
= 15V, Tj=
125C
(see Figure 18)
31
11.5
1500
450
ns
ns
A/s
J
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
t
r
(V
off
)
Off Voltage Rise Time
V
cc
= 390 V, I
C
= 20 A,
R
GE
= 3.3
, V
GE
= 15 V
T
J
= 25 C
(see Figure 18)
28
ns
t
d
(
off
)
Turn-off Delay Time
100
ns
t
f
Current Fall Time
75
ns
E
off
(3)
Turn-off Switching Loss
330
450
J
E
ts
Total Switching Loss
550
750
J
t
r
(V
off
)
Off Voltage Rise Time
V
cc
= 390 V, I
C
= 20 A,
R
GE
= 3.3
, V
GE
= 15 V
Tj = 125 C
(see Figure 18)
66
ns
t
d
(
off
)
Turn-off Delay Time
150
ns
t
f
Current Fall Time
130
ns
E
off
(3)
Turn-off Switching Loss
770
J
E
ts
Total Switching Loss
1220
J
STGP20NC60V - STGW20NC60V
4/11
Figure 3: Output Characteristics
Figure 4: Transconductance
Figure 5: Collector-Emitter On Voltage vs Col-
lector Current
Figure 6: Transfer Characteristics
Figure 7: Collector-Emitter On Voltage vs Tem-
perature
Figure 8: Normalized Gate Threshold vs Tem-
perature
5/11
STGP20NC60V - STGW20NC60V
Figure 9: Normalized Breakdown Voltage vs
Temperature
Figure 10: Capacitance Variations
Figure 11: Total Switching Losses vs Gate Re-
sistance
Figure 12: Gate Charge vs Gate-Emitter Volt-
age
Figure 13: Total Switching Losses vs Temper-
ature
Figure 14: Total Switching Losses vs Collector
Current
STGP20NC60V - STGW20NC60V
6/11
Figure 15: Thermal Impedance
Figure 16: Turn-Off SOA
Figure 17: Ic vs Frequency
For a fast IGBT suitable for high frequency appli-
cations, the typical collector current vs. maximum
operating frequency curve is reported. That fre-
quency is defined as follows:
f
MAX
= (P
D
- P
C
) / (E
ON
+ E
OFF
)
1) The maximum power dissipation is limited by
maximum junction to case thermal resistance:
P
D
=
T / R
THJ-C
considering
T = T
J
- T
C
= 125 C- 75 C = 50C
2) The conduction losses are:
P
C
= I
C
* V
CE(SAT)
*
with 50% of duty cycle, V
CESAT
typical value
@125C.
3) Power dissipation during ON & OFF commuta-
tions is due to the switching frequency:
P
SW
= (E
ON
+ E
OFF
) * freq.
4) Typical values @ 125C for switching losses are
used (test conditions: V
CE
= 390V, V
GE
= 15V,
R
G
= 3.3 Ohm). Furthermore, diode recovery en-
ergy is included in the E
ON
(see note 2), while the
tail of the collector current is included in the E
OFF
measurements (see note 3).
7/11
STGP20NC60V - STGW20NC60V
Figure 18: Test Circuit for Inductive Load
Switching
Figure 19: Switching Waveforms
Figure 20: Gate Charge Test Circuit
STGP20NC60V - STGW20NC60V
8/11
DIM.
mm.
inch
MIN.
TYP
MAX.
MIN.
TYP.
MAX.
A
4.40
4.60
0.173
0.181
b
0.61
0.88
0.024
0.034
b1
1.15
1.70
0.045
0.066
c
0.49
0.70
0.019
0.027
D
15.25
15.75
0.60
0.620
E
10
10.40
0.393
0.409
e
2.40
2.70
0.094
0.106
e1
4.95
5.15
0.194
0.202
F
1.23
1.32
0.048
0.052
H1
6.20
6.60
0.244
0.256
J1
2.40
2.72
0.094
0.107
L
13
14
0.511
0.551
L1
3.50
3.93
0.137
0.154
L20
16.40
0.645
L30
28.90
1.137
P
3.75
3.85
0.147
0.151
Q
2.65
2.95
0.104
0.116
TO-220 MECHANICAL DATA
9/11
STGP20NC60V - STGW20NC60V
DIM.
mm.
inch
MIN.
TYP
MAX.
MIN.
TYP.
MAX.
A
4.85
5.15
0.19
0.20
A1
2.20
2.60
0.086
0.102
b
1.0
1.40
0.039
0.055
b1
2.0
2.40
0.079
0.094
b2
3.0
3.40
0.118
0.134
c
0.40
0.80
0.015
0.03
D
19.85
20.15
0.781
0.793
E
15.45
15.75
0.608
0.620
e
5.45
0.214
L
14.20
14.80
0.560
0.582
L1
3.70
4.30
0.14
0.17
L2
18.50
0.728
P
3.55
3.65
0.140
0.143
R
4.50
5.50
0.177
0.216
S
5.50
0.216
TO-247 MECHANICAL DATA
STGP20NC60V - STGW20NC60V
10/11
Table 10: Revision History
Date
Revision
Description of Changes
07-June-2004
4
Stylesheet update. No content change
11/11
STGP20NC60V - STGW20NC60V
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the
consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from
its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications
mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information
previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or
systems without express written approval of STMicroelectronics.
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