Target Specification
Rev 1
September 2005
1/9
9
This is a preliminary information on a new product foreseen to be developed. Details are subject to change without notice
STGW30NC60W
N-CHANNEL 30A - 600V - TO-247
Ultra FAST Switching PowerMESHTM IGBT
General features
VERY LOW OFF LOSSES INCLUDING TAIL
CURRENT
LOWER C
RES
/ C
IES
RATIO
LOSSES INCLUDE DIODE RECOVERY
ENERGY
HIGH FREQUENCY OPERATION
VERY SOFT ULTRA FAST RECOVERY ANTI
PARALLEL DIODE
Description
Using the latest high voltage technology based on
a patented strip layout, STMicroelectronics has
designed an advanced family of IGBTs, the
PowerMESH
TM
IGBTs, with outstanding
performances. The suffix "W" identifies a family
optimized for very high frequency application.
Applications
HIGH FREQUENCY INVERTERS, UPS,
MOTOR DRIVERS
HF, SMPS and PFC IN BOTH HARD SWITCH
AND RESONANT TOPOLOGIES
Order codes
Package
Internal schematic diagram
Type
V
CES
V
CE(sat)
(Max)@ 25C
I
C
@100C
STGW30NC60W
600 V
< 2.5 V
30 A
1
2
3
TO-247
Sales Type
Marking
Package
Packaging
STGW30NC60W
W30NC60W
TO-247
TUBE
www.st.com
1 Electrical ratings
STGW30NC60W
2/9
1 Electrical
ratings
Table 1.
Absolute maximum ratings
Table 2.
Thermal Data
Symbol
Parameter
Value
Unit
V
CES
Collector-Emitter Voltage (V
GS
= 0)
600
V
I
C
Collector Current (continuous) at 25C (#)
60
A
I
C
Collector Current (continuous) at 100C (#)
30
A
V
ECR
Reverse Battery Protection
20
V
V
GE
Gate-Emitter Voltage
20
V
I
CM
Note
1
Collector Current (pulsed)
100
A
P
TOT
Total Dissipation at T
C
= 25C
200
W
Derating Factor
1.6
W/C
T
stg
Storage Temperature
55 to 150
C
T
j
Operating Junction Temperature
Min.
Typ.
Max.
Unit
Rthj-case
Thermal Resistance Junction-case
0.625
C/W
Rthj-amb
Thermal Resistance Junction-ambient
62.5
C/W
T
L
Maximum Lead Temperature for Soldering Purpose
(1.6 mm from case, for 10 sec.)
300
C
STGW30NC60W
2 Electrical characteristics
3/9
2 Electrical
characteristics
(T
CASE
= 25 C unless otherwise specified)
Table 3.
Static
Table 4.
Dynamic
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
V
BR(CES)
Collectro-Emitter Breakdown
Voltage
I
C
= 1 mA, V
GE
= 0
600
V
V
CE(SAT)
Collector-Emitter Saturation
Voltage
V
GE
= 15 V, I
C
= 20A, Tj= 25C
V
GE
= 15 V, I
C
= 20A,
Tj= 125C
1.9
1.8
2.5
V
V
V
GE(th)
Gate Threshold Voltage
V
CE
= V
GE
, I
C
= 250 A
3.75
5.75
V
I
CES
Collector-Emitter Leakage
Current (V
CE
= 0)
V
GE
= Max Rating,Tc=25C
V
GE
= Max Rating, Tc=125C
10
1
A
mA
I
GES
Gate-Emitter Leakage
Current (V
CE
= 0)
V
GE
= 20 V , V
CE
= 0
100
nA
g
fs
Note
1
Forward Transconductance
V
CE
= 15 V
,
I
C
= 20 A
15
S
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
C
ies
C
oes
C
res
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
V
CE
= 25V, f = 1 MHz, V
GE
=
0
2200
225
50
pF
pF
pF
Q
g
Q
ge
Q
gc
Total Gate Charge
Gate-Emitter Charge
Gate-Collector Charge
V
CE
= 390 V, I
C
= 20 A,
V
GE
= 15V,
(see Figure 2)
100
16
45
140
nC
nC
nC
I
CL
Turn-Off SOA Minimum
Current
V
clamp
= 480 V
,
Tj = 150C
R
G
= 10
,
V
GE
= 15V
100
A
2 Electrical characteristics
STGW30NC60W
4/9
Table 5.
Switching On/Off
Table 6.
Switching energy
(1)Pulse width limited by max. junction temperature
(2) Eon is the tun-on losses when a typical diode is used in the test circuit in figure 2. If the IGBT is offered in a package with a
co-pak diode, the co-pack diode is used as external diode. IGBTs & Diode are at the same temperature (25C and 125C)
(3) Turn-off losses include also the tail of the collector current
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
t
d(on)
t
r
(di/dt)
on
Turn-on Delay Time
Current Rise Time
Turn-on Current Slope
V
CC
= 390 V, I
C
= 20 A
R
G
= 10
, V
GE
= 15V, Tj= 25C
(see Figure 3)
31
11
1600
ns
ns
A/s
t
d(on)
t
r
(di/dt)
on
Turn-on Delay Time
Current Rise Time
Turn-on Current Slope
V
CC
= 390 V, I
C
= 20 A
R
G
= 10
, V
GE
= 15V, Tj= 125C
(see Figure 3)
31
11.5
1500
ns
ns
A/s
t
r
(V
off
)
t
d
(
off
)
t
f
Off Voltage Rise Time
Turn-off Delay Time
Current Fall Time
V
cc
= 390 V, I
C
= 5 A,
R
GE
= 10
, V
GE
= 15 V,T
J
=25C
(see Figure 3)
16.5
115
38
ns
ns
ns
t
r
(V
off
)
t
d
(
off
)
t
f
Off Voltage Rise Time
Turn-off Delay Time
Current Fall Time
V
cc
= 390 V, I
C
= 5 A,
R
GE
=10
, V
GE
=15 V, Tj=125 C
(see Figure 3)
34
152
48
ns
ns
ns
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
Eon
Note
3
E
off
Note
4
E
ts
Turn-on Switching Losses
Turn-off Switching Losses
Total Switching Losses
V
CC
= 390 V, I
C
= 75 A
R
G
= 10
, V
GE
= 15V, Tj= 25C
(see Figure 3)
200
205
405
J
J
J
Eon
Note
3
E
off
Note
4
E
ts
Turn-on Switching Losses
Turn-off Switching Losses
Total Switching Losses
V
CC
= 390 V, I
C
= 5 A
R
G
= 10
, V
GE
= 15V, Tj= 125C
(see Figure 3)
400
365
765
J
J
J
STGW30NC60W
3 Test Circuits
5/9
3 Test
Circuits
Figure 1.
Test Circuit for Inductive Load
Switching
Figure 2.
Gate Charge Test Circuit
Figure 3.
Switching Waveform
4 Package mechanical data
STGW30NC60W
6/9
4
Package mechanical data
In order to meet environmental requirements, ST offers these devices in ECOPACK
packages. These packages have a Lead-free second level interconnect . The category of
second level interconnect is marked on the package and on the inner box label, in compliance
with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also
marked on the inner box label. ECOPACK is an ST trademark. ECOPACK specifications are
available at: www.st.com
STGW30NC60W
4 Package mechanical data
7/9
DIM.
mm.
inch
MIN.
TYP
MAX.
MIN.
TYP.
MAX.
A
4.85
5.15
0.19
0.20
A1
2.20
2.60
0.086
0.102
b
1.0
1.40
0.039
0.055
b1
2.0
2.40
0.079
0.094
b2
3.0
3.40
0.118
0.134
c
0.40
0.80
0.015
0.03
D
19.85
20.15
0.781
0.793
E
15.45
15.75
0.608
0.620
e
5.45
0.214
L
14.20
14.80
0.560
0.582
L1
3.70
4.30
0.14
0.17
L2
18.50
0.728
P
3.55
3.65
0.140
0.143
R
4.50
5.50
0.177
0.216
S
5.50
0.216
TO-247 MECHANICAL DATA
5 Revision History
STGW30NC60W
8/9
5
Revision History
Date
Revision
Changes
15-Sep-2005
1
Initial release.
STGW30NC60W
5 Revision History
9/9
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by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject
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