June 2006
Rev 1
1/14
14
STGW40NC60WD
N-channel 40A - 600V - TO-247
Very fast switching PowerMESHTM IGBT
General features
Low C
RES
/ C
IES
ratio (no cross conduction
susceptibility)
High frequency operation
Very soft ultra fast recovery anti parallel diode
Description
Using the latest high voltage technology based on
a patented strip layout, STMicroelectronics has
designed an advanced family of IGBTs, the
PowerMESHTM IGBTs, with outstanding
performances. The suffix "W" identifies a family
optimized for very high frequency application.
Applications
High frequency inverters, UPS
Motor drivers
HF, SMPS and PFC in both hard switch and
resonant topologies
Welding
Internal schematic diagram
Type
V
CES
V
CE(sat)
(Max)@ 25C
I
C
@100C
STGW40NC60WD
600V
<2.5V
40A
TO-247
www.st.com
Order codes
Part number
Marking
Package
Packaging
STGW40NC60WD
GW40NC60WD
TO-247
Tube
Contents
STGW40NC60WD
2/14
Contents
1
Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
2
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1
Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
3
Test circuit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
4
Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
5
Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
STGW40NC60WD Electrical
ratings
3/14
1 Electrical
ratings
Table 1.
Absolute maximum ratings
Symbol
Parameter
Value
Unit
V
CES
Collector-emitter voltage (V
GS
= 0)
600
V
I
C
(1)
1.
Calculated according to the iterative formula:
Collector current (continuous) at 25C
70
A
I
C
(1)
Collector current (continuous) at 100C
40
A
I
CL
(2)
2.
V
clamp
= 480V
, Tj = 150C, R
G
= 10
, V
GE
= 15V
Turn-off SOA minimum current
230
A
V
GE
Gate-emitter voltage
20
V
I
F
Diode RMS forward current at T
C
=25C
15
A
P
TOT
Total dissipation at T
C
= 25C
250
W
T
stg
Operating junction temperature
55 to 150
C
T
j
Storage temperature
T
L
Maximum lead temperature for soldering
purpose (1.6mm from case, for 10sec.)
300
C
Table 2.
Thermal resistance
Symbol
Parameter
Value
Unit
Rthj-case
Thermal resistance junction-case Max
0.6
C/W
Rthj-amb
Thermal resistance junction-ambient Max
50
C/W
I
C
T
C
(
)
T
JMAX
T
C
R
THJ
C
V
CESAT MAX
(
)
T
C
I
C
,
(
)
------------------------------------------------------------------------------------------------------
=
Electrical characteristics
STGW40NC60WD
4/14
2 Electrical
characteristics
(T
CASE
=25C unless otherwise specified)
Table 3.
Static
Symbol
Parameter
Test condictions
Min.
Typ.
Max. Unit
V
BR(CES)
Collector-emitter breakdown
voltage
I
C
= 1mA, V
GE
= 0
600
V
V
CE(SAT)
Collector-emitter saturation
voltage
V
GE
= 15V, I
C
= 30A, Tj= 25C
V
GE
= 15V, I
C
= 30A, Tj= 125C
2.1
1.9
2.5
V
V
V
GE(th)
Gate threshold voltage
V
CE
= V
GE
, I
C
= 250A
3.75
5.75
V
I
CES
Collector-emitter leakage
current (V
CE
= 0)
V
GE
= Max rating,Tc=25C
V
GE
= Max rating, Tc=125C
50
3
A
mA
I
GES
Gate-emitter leakage
current (V
CE
= 0)
V
GE
= 20V , V
CE
= 0
100
nA
g
fs
Forward transconductance
V
CE
= 15V
,
I
C
= 30A
20
S
Table 4.
Dynamic
Symbol
Parameter
Test condictions
Min.
Typ.
Max.
Unit
C
ies
C
oes
C
res
Input capacitance
Output capacitance
Reverse transfer
capacitance
V
CE
= 25V, f = 1 MHz, V
GE
= 0
2900
298
59
pF
pF
pF
Q
g
Q
ge
Q
gc
Total gate charge
Gate-emitter charge
Gate-collector charge
V
CE
= 390V, I
C
= 20A,
V
GE
= 15V,
(see Figure 16)
126
16
46
nC
nC
nC
I
CL
Turn-off SOA Minimum
current
V
clamp
= 480V
, Tj = 150C
R
G
= 10
, V
GE
= 15V
230
A
STGW40NC60WD Electrical
characteristics
5/14
Table 5.
Switching on/off (inductive load)
Symbol
Parameter
Test condictions
Min.
Typ.
Max.
Unit
t
d(on)
t
r
(di/dt)
on
Turn-on delay time
Current rise time
Turn-on current slope
V
CC
= 390V, I
C
= 30A
R
G
= 10
, V
GE
= 15V,
Tj= 25C
(see Figure 15)
33
12
260
ns
ns
A/s
t
d(on)
t
r
(di/dt)
on
Turn-on delay timE
Current rise time
Turn-on current slope
V
CC
= 390V, I
C
= 30A
R
G
= 10
, V
GE
= 15V,
Tj= 125C
(see Figure 15)
32
14
2300
ns
ns
A/s
t
r
(V
off
)
t
d
(
off
)
t
f
Off voltage rise time
Turn-off delay time
Current fall time
V
cc
= 390V, I
C
= 30A,
R
GE
= 10
, V
GE
=15V,
T
J
=25C
(see Figure 15)
26
168
36
ns
ns
ns
t
r
(V
off
)
t
d
(
off
)
t
f
Off voltage rise time
Turn-off delay time
Current fall time
V
cc
= 390V, I
C
= 30A,
R
GE
=10
, V
GE
=15V,
Tj=125 C
(see Figure 15)
54
213
67
ns
ns
ns
Table 6.
Switching energy (inductive load)
Symbol
Parameter
Test condictions
Min
Typ.
Max
Unit
E
on
(1)
E
off
(2)
E
ts
1.
Eon is the tun-on losses when a typical diode is used in the test circuit in figure 2 Eon include diode
recovery energy. If the IGBT is offered in a package with a co-pak diode, the co-pack diode is used as
external diode. IGBTs & Diode are at the same temperature (25C and 125C)
2.
Turn-off losses include also the tail of the collector current
Turn-on switching losses
Turn-off switching losses
Total switching losses
V
CC
= 390V, I
C
= 30A
R
G
= 10
, V
GE
= 15V,
Tj= 25C
(see Figure 15)
302
394
651
J
J
J
E
on
(1)
E
off
(2)
E
ts
Turn-on switching losses
Turn-off switching losses
Total switching losses
V
CC
= 390V, I
C
= 30A
R
G
= 10
, V
GE
= 15V,
Tj= 125C
(see Figure 15)
553
750
1303
J
J
J
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