STGW50NB60H
N-CHANNEL 50A - 600V TO-247
PowerMESH
TM
IGBT
PRELIMINARY DATA
s
HIGH INPUT IMPEDANCE
(VOLTAGE DRIVEN)
s
LOW ON-VOLTAGE DROP (V
CESAT
)
s
LOW GATE CHARGE
s
HIGH CURRENT CAPABILITY
s
VERY HIGH FREQUENCY OPERATION
s
OFF LOSSES INCLUDE TAIL CURRENT
DESCRIPTION
Using the latest high voltage technology based
on a patented strip layout, STMicroelectronics
has designed an advanced family of IGBTs, the
PowerMESH
TM
IGBTs, with outstanding
perfomances. The suffix "H" identifies a family
optimized to achieve very low switching times for
high frequency applications (<120kHz).
APPLICATIONS
s
HIGH FREQUENCY MOTOR CONTROLS
s
WELDING EQUIPMENTS
s
SMPS AND PFC IN BOTH HARD SWITCH
AND RESONANT TOPOLOGIES
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
Value
Unit
V
CES
Collector-Emitter Voltage (V
GS
= 0)
600
V
V
ECR
Emitter-Collector Voltage
20
V
V
GE
Gate-Emitter Voltage
20
V
I
C
Collector Current (continuous) at T
c
= 25
o
C
100
A
I
C
Collector Current (continuous) at T
c
= 100
o
C
50
A
I
CM
(
)
Collector Current (pulsed)
400
A
P
tot
Total Dissipation at T
c
= 25
o
C
250
W
Derating Factor
2
W/
o
C
T
stg
Storage Temperature
-65 to 150
o
C
T
j
Max. Operating Junction Temperature
150
o
C
(
) Pulse width limited by safe operating area
TYPE
V
CES
V
CE(sat)
I
C
STGW50NB60H
600 V
< 2.8 V
50 A
June 1999
1
2
3
TO-247
1/5
THERMAL DATA
R
thj-case
R
thj-amb
R
thc-h
Thermal Resistance Junction-case Max
Thermal Resistance Junction-ambient Max
Thermal Resistance Case-heatsink Typ
0.5
30
0.1
o
C/W
oC/W
o
C/W
ELECTRICAL CHARACTERISTICS (T
j
= 25
o
C unless otherwise specified)
OFF
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
V
BR(CES)
Collector-Emitter
Breakdown Voltage
I
C
= 250
A V
GE
= 0
600
V
I
CES
Collector cut-off
(V
GE
= 0)
V
CE
= Max Rating T
j
= 25
o
C
V
CE
= Max Rating T
j
= 125
o
C
10
100
A
A
I
GES
Gate-Emitter Leakage
Current (V
CE
= 0)
V
GE
=
20 V V
CE
= 0
100
nA
ON (
)
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
V
GE(th)
Gate Threshold
Voltage
V
CE
= V
GE
I
C
= 250
A
3
5
V
V
CE(SAT)
Collector-Emitter
Saturation Voltage
V
GE
= 15 V I
C
= 50 A
V
GE
= 15 V I
C
= 50 A T
j
= 125
o
C
2.3
1.9
2.8
V
V
DYNAMIC
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
g
f s
Forward
Transconductance
V
CE
=25 V I
C
= 50 A
22
S
C
ies
C
oes
C
res
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
V
CE
= 25 V f = 1 MHz V
GE
= 0
4500
450
90
pF
pF
pF
Q
G
Q
GE
Q
GC
Total Gate Charge
Gate-Emitter Charge
Gate-Collector Charge
V
CE
= 480 V I
C
= 50 A V
GE
= 15 V
260
28
115
nC
nC
nC
I
CL
Latching Current
V
clamp
= 480 V R
G
=10
V
GE
= 15 V T
j
= 150
o
C
200
A
SWITCHING ON
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
t
d(on )
t
r
Delay Time
Rise Time
V
CC
= 480 V I
C
= 50 A
V
GE
= 15 V R
G
= 10
30
90
ns
ns
(di/dt)
on
E
on
Turn-on Current Slope
Turn-on
Switching Losses
V
CC
= 480 V I
C
= 50 A
R
G
= 10
V
GE
= 15 V
T
j
= 125
o
C
350
600
A/
s
J
STGW50NB60H
2/5
ELECTRICAL CHARACTERISTICS (continued)
SWITCHING OFF
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
t
c
t
r
(v
off
)
t
d
(
of f
)
t
f
E
off
(**)
E
ts
Cross-Over Time
Off Voltage Rise Time
Delay Time
Fall Time
Turn-off Switching Loss
Total Switching Loss
V
CC
= 480 V I
C
= 50 A
R
GE
= 10
V
GE
= 15 V
166
48
326
90
2.1
2.7
ns
ns
ns
ns
mJ
mJ
t
c
t
r
(v
off
)
t
d
(
of f
)
t
f
E
off
(**)
E
ts
Cross-Over Time
Off Voltage Rise Time
Delay Time
Fall Time
Turn-off Switching Loss
Total Switching Loss
VCC = 480 V I
C
= 50 A
R
GE
= 10
V
GE
= 15 V
T
j
= 125
o
C
270
75
340
200
2.9
3.5
ns
ns
ns
ns
mJ
mJ
(
) Pulse width limited by max. junction temperature
(
) Pulsed: Pulse duration = 300
s, duty cycle 1.5 %
(**)Losses Include Also The Tail (Jedec Standardization)
STGW50NB60H
3/5
DIM.
mm
inch
MIN.
TYP.
MAX.
MIN.
TYP.
MAX.
A
4.7
5.3
0.185
0.209
D
2.2
2.6
0.087
0.102
E
0.4
0.8
0.016
0.031
F
1
1.4
0.039
0.055
F3
2
2.4
0.079
0.094
F4
3
3.4
0.118
0.134
G
10.9
0.429
H
15.3
15.9
0.602
0.626
L
19.7
20.3
0.776
0.779
L3
14.2
14.8
0.559
0.582
L4
34.6
1.362
L5
5.5
0.217
M
2
3
0.079
0.118
P025P
TO-247 MECHANICAL DATA
STGW50NB60H
4/5
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences
of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is
granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are
subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products
are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.
The ST logo is a trademark of STMicroelectronics
1999 STMicroelectronics Printed in Italy All Rights Reserved
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.
STGW50NB60H
5/5
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