STL12IE90
900 V - 12 A - 90 m
POWER CASCODE MONOLITHIC CONFIGURATION
ADVANCE DATA
s
HIGH VOLTAGE / HIGH CURRENT
CASCODE CONFIGURATION
s
LOW EQUIVALENT ON RESISTANCE
s
VERY FAST-SWITCH UP TO 150 KHz
s
SQUARED RBSOA UP TO 900 V
s
VERY LOW C
ISS
DRIVEN BY R
G
= 56
s
VERY LOW TURN-OFF CROSS OVER TIME
INTERNAL SCHEMATIC DIAGRAM
October 2003
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
Value
Unit
V
CS(SS)
Collector-Source Voltage (V
BS
=V
GS
= 0V)
900
V
V
BS(OS)
Base-SourceVoltage (I
C
= 0, V
GS
= 0V)
30
V
V
SB(OS)
Source-Base Voltage (I
C
= 0, V
GS
= 0V)
25
V
V
GS
Gate-Source Voltage
20
V
I
C
Collector Current
12
A
I
CM
Collector Peak Current (t
p
5 ms)
30
A
I
B
Base Current
6
A
I
BM
Base Peak Current (t
p
1 ms)
12
A
P
tot
Total Dissipation at T
c
= 25
o
C
tbd
W
T
stg
Storage Temperature
-65 to 150
o
C
T
j
Max. Operating Junction Temperature
150
o
C
1
2
3
4
5
SOT-93 5 Leads
Electrical Symbol Device Structure
1/5
THERMAL DATA
R
thj-case
R
thc-h
Thermal Resistance Junction-Case Max
Thermal Resistance Case-heatsink With Conductive Grease
Applied Max
tbd
tbd
o
C/W
o
C/W
ELECTRICAL CHARACTERISTICS (T
case
= 25
o
C unless otherwise specified)
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
I
CS(SS)
Collector-Source
Current
(V
BS
= V
GS
=0 V)
V
CS(SS)
= 900 V
100
A
I
BS(OS)
Base-Source Current
(I
C
= 0, V
GS
=0 V)
V
BS(OS)
= 30 V
10
A
I
SB(OS)
Source-Base Current
(I
C
= 0, V
GS
=0 V)
V
SB(OS)
= 15 V
100
A
I
GS(S)
Gate-Source Leakage
(V
BS
= 0 V)
V
GS
=
20 V
100
nA
V
CS(ON)
Collector-Source ON
Voltage
V
GS
= 10 V I
C
= 7 A
V
B'S
= 1.5 V R
B'B
= 0.33
(see figure 1)
0.75
1
V
R
CS(ON)
Equivalent ON
Resistance
V
GS
= 10 V I
C
= 7 A
V
B'S
= 1.5 V R
B'B
= 0.33
(see figure 1)
90
120
m
h
FE
DC Current Gain
I
C
= 7 A V
CS
= 2 V V
GS
= 10 V
12
14
17
V
BS(ON)
Base-Source ON
Voltage
I
C
= 7 A I
B
= 0.7 A
V
GS
= 10 V
1.3
1.7
V
V
GS(th)
Gate Threshold
Voltage
V
BS
= V
GS
I
B
= 250
A
2.8
3.5
4.0
V
C
iss
Input Capacitance
V
BS
= 25 V f = 1 MHz V
GS
= 0
550
pF
Q
GS
Gate-Source Charge
V
GS
= 10 V I
B
= 5 A
22
nC
t
s
t
f
INDUCTIVE LOAD
Storage Time
Fall Time
I
C
= 7 A V
CC
= 300 V
V
clamp
= 800 V V
B'S
= 1.4 V
R
B'B
= 0.33
R
G
= 56
(see figure 2)
0.6
15
s
ns
t
d(on)
INDUCTIVE LOAD
Time Delay Turn-on
I
C
= 4 A
V
CC
= 300 V
R
G
= 56
C
B'S
= 220 nF
V
GS
= 10 V I
B(on)
= 4 A
(see figure 3)
100
ns
t
r(on)
INDUCTIVE LOAD
Time Rise Turn-off
I
C
= 4 A
V
CC
= 300 V
R
G
= 56
C
B'S
= 220 nF
V
GS
= 10 V I
B(on)
= 4 A
(see figure 3)
45
ns
V
CS(dyn)
Collector-Source
Dynamic Voltage
I
C
= 4 A
V
CC
= 300 V
R
G
= 56
C
B'S
= 220 nF
V
GS
= 10 V I
B(on)
= 4 A
@ 200 ns
@ 500 ns
(see figure 3)
6.5
1.3
V
V
V
CSW
Maximum Collector
Source Voltage
without Snubber
I
CWoff
= 7 A
V
CC
= 300 V
V
clamp
= 900 V V
B'S
= 1.4 V
R
B'B
= 0.33
R
G
= 56
(see figure 2)
900
V
STL12IE90
2/5
Reverse Biased SOA
Figure 2: Inductive Load Switching and RBSOA Test Circuit
Figure 3: Collector-Emitter Dynamic Voltage Test Circuit
Figure 1: Static V
CS(ON)
Test Circuit
STL12IE90
3/5
DIM.
mm
inch
MIN.
TYP.
MAX.
MIN.
TYP.
MAX.
A
4.40
4.50
4.70
0.173
0.177
0.185
C
1.90
2.00
2.10
0.075
0.078
0.082
D
1.90
2.85
0.075
0.112
D1
2.30
2.55
0.090
0.100
E
0.48
0.57
0.019
0.022
F
1.05
1.25
0.039
0.051
F1
0.01
0.25
0.00039
0.0098
F2
1.35
0.053
G
4.88
5.08
5.28
0.192
0.200
0.207
G1
9.96
10.16
10.36
0.392
0.400
0.407
G2
8.90
0.350
H
15.00
15.10
15.20
0.590
0.594
0.598
H1
14.90
15.30
0.586
H2
12.05
0.474
L
12.10
12.26
12.26
0.476
0.482
0.482
L1
15.90
16.10
16.30
0.625
0.633
0.641
L2
19.90
20.10
20.30
0.783
0.791
0.799
L3
18.00
0.708
L4
0.80
0.031
L6
29.50
29.75
30.10
1.161
1.171
1.185
S
2.90
0.114
S1
1.60
0.062
V
30
o
0.100
V1
6
o
0.084
V2
10
o
0.05
DIA
4.00
0.157
P025M
SOT93-5L MECHANICAL DATA
STL12IE90
4/5
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STL12IE90
5/5
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