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Электронный компонент: STL27N15

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TARGET DATA
June 2003
This is preliminary information on a new product forseen to be developped. Details are subject to change without notice
STL27N15
N-CHANNEL 150V - 0.045
- 27A PowerFLATTM
LOW GATE CHARGE STripFETTM MOSFET
s
TYPICAL R
DS
(on) = 0.045
s
IMPROVED DIE-TO-FOOTPRINT RATIO
s
VERY LOW PROFILE PACKAGE (1mm MAX)
s
VERY LOW THERMAL RESISTANCE
s
VERY LOW GATE CHARGE
DESCRIPTION
This MOSFET series realized with STMicroelectronics
unique "STripFETTM" process has specifically been
designed to minimize input capacitance and gate charge.
It's therefore suitable as primary switch in advanced high
efficiency, high frequency isolated DC-DC converter for
telecom an computer application. The new
PowerFLATTM package allows e significant reduction in a
board space without compromising performance.
APPLICATIONS
s
HIGH-EFFICIENCY ISOLATED DC-DC
CONVERTERS
s
TELECOM AND BATTERY CHARGER
ADAPTOR
s
SYNCHRONOUS RECTIFICATION
Ordering Information
TYPE
V
DSS
R
DS(on)
I
D
STL15N15
150 V
<0.060
27 A
(1)
SALES TYPE
MARKING
PACKAGE
PACKAGING
STL27N15
L27N15
PowerFLAT
TAPE & REEL
PowerFLAT
TM(6x5)
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
Value
Unit
V
DS
Drain-source Voltage (V
GS
= 0)
150
V
V
DGR
Drain-gate Voltage (R
GS
= 20 k
)
150
V
V
GS
Gate- source Voltage
20
V
I
D
Drain Current (continuous) at T
C
= 25C (Steady State)
6
A
I
D
Drain Current (continuous) at T
C
= 100C
4
A
I
DM(3)
Drain Current (pulsed)
24
A
P
tot(2)
Total Dissipation at T
C
= 25C (Steady State)
4
W
P
tot(1)
Total Dissipation at T
C
= 25C
80
W
Derating Factor
0.03
W/C
dv/dt
(5)
Peak Diode Recovery voltage slope
TBD
V/ns
T
stg
Storage Temperature
-55 to 150
C
T
j
Operating Junction Temperature
INTERNAL SCHEMATIC DIAGRAM
STL27N15
2/6
THERMAL DATA
.
ELECTRICAL CHARACTERISTICS (T
case
= 25 C unless otherwise specified)
OFF
ON
(6)
DYNAMIC
Rthj-F
Rthj-pcb(2)
Thermal Resistance Junction-Foot (Drain)
Thermal Operating Junction-pcb
1.56
31.2
C/W
C/W
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
V
(BR)DSS
Drain-source
Breakdown Voltage
I
D
= 250 A, V
GS
= 0
100
V
I
DSS
Zero Gate Voltage
Drain Current (V
GS
= 0)
V
DS
= Max Rating
V
DS
= Max Rating T
C
= 125C
1
10
A
A
I
GSS
Gate-body Leakage
Current (V
DS
= 0)
V
GS
= 20 V
100
nA
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
V
GS(th)
Gate Threshold Voltage
V
DS
= V
GS
I
D
= 250 A
1
V
R
DS(on)
Static Drain-source On
Resistance
V
GS
= 10 V
I
D
= 3 A
0.045
0.060
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
g
fs (6)
Forward Transconductance
V
DS =
50 V
I
D
= 5 A
TBD
S
C
iss
C
oss
C
rss
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
V
DS
= 25V, f = 1 MHz, V
GS
= 0
TBD
TBD
TBD
pF
pF
pF
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STL27N15
SWITCHING ON
SWITCHING OFF
SOURCE DRAIN DIODE
(
1
)
The value is rated according R
thj-F
.
(
2
)
When Mounted on FR-4 board of 1 inch, 2oz Cu
(
3
)
Pulse width limited by safe operating area.
(
5
)
I
SD
6A, di/dt
300A/s, V
DD
V
(BR)DSS
, T
j
T
JMAX
.
(
6
)
Pulsed: Pulse duration = 300 s, duty cycle 1.5 %.
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
t
d(on)
t
r
Turn-on Delay Time
Rise Time
V
DD
= 50 V
I
D
= 3 A
R
G
= 4.7
V
GS
= 10 V
(Resistive Load, Figure 3)
TBD
TBD
ns
ns
Q
g
Q
gs
Q
gd
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
V
DD
= 50V I
D
= 6A V
GS
=10V
TBD
TBD
TBD
28
nC
nC
nC
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
t
d(off)
t
f
Turn-off Delay Time
Fall Time
V
DD
= 50 V
I
D
= 3 A
R
G
= 4.7
,
V
GS
= 10 V
(Resistive Load, Figure 3)
TBD
TBD
ns
ns
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
I
SD
I
SDM(3)
Source-drain Current
Source-drain Current (pulsed)
6
24
A
A
V
SD
(6)
Forward On Voltage
I
SD
= 3 A
V
GS
= 0
1.2
V
t
rr
Q
rr
I
RRM
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
I
SD
=6 A
di/dt = 100A/s
V
DD
= 30 V
j
= 150C
(see test circuit, Figure 5)
TBD
TBD
TBD
ns
nC
A
ELECTRICAL CHARACTERISTICS (continued)
STL27N15
4/6
Fig. 1: Unclamped Inductive Load Test Circuit
Fig. 1: Unclamped Inductive Load Test Circuit
Fig. 2: Unclamped Inductive Waveform
Fig. 3: Switching Times Test Circuits For Resistive
Load
Fig. 4: Gate Charge test Circuit
Fig. 5: Test Circuit For Inductive Load Switching
And Diode Recovery Times
5/6
STL27N15