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PRELIMINARY DATA
November 2001
STL30NF3LL
N-CHANNEL 30V - 0.008
- 30A PowerFLATTM
LOW GATE CHARGE STripFETTM MOSFET
s
TYPICAL R
DS
(on) = 0.008
s
IMPROVED DIE-TO-FOOTPRINT RATIO
s
VERY LOW PROFILE PACKAGE
DESCRIPTION
This Power MOSFET is the second generation of
STMicroelectronics unique "STripFETTM" technolo-
gy. The resulting transistor shows extremely low on-
resistance and minimal gate charge. The new Pow-
erFLATTM package allows a significant reduction in
board space without compromising performance.
APPLICATIONS
s
DC-DC CONVERTERS
s
BATTERY MANAGEMENT IN NOMADIC
EQUIPMENT
ABSOLUTE MAXIMUM RATINGS
(
q
) Pulse width limited by safe operating area
(#) Limited by Wire Bonding
TYPE
V
DSS
R
DS(on)
I
D
STL30NF3LL
30 V
< 0.010
30 A
Symbol
Parameter
Value
Unit
V
DS
Drain-source Voltage (V
GS
= 0)
30
V
V
DGR
Drain-gate Voltage (R
GS
= 20 k
)
30
V
V
GS
Gate- source Voltage
16
V
I
D
(#)
Drain Current (continuos) at T
C
= 25C
Drain Current (continuos) at T
C
= 100C
30
19
A
A
I
DM
(
l
)
Drain Current (pulsed)
120
A
P
TOT
Total Dissipation at T
C
= 25C
80
W
Derating Factor
0.64
W/C
T
stg
Storage Temperature
55 to 150
C
T
j
Max. Operating Junction Temperature
PowerFLATTM(6x5)
(Chip Scale Package)
INTERNAL SCHEMATIC DIAGRAM
STL30NF3LL
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THERMAL DATA
ELECTRICAL CHARACTERISTICS (TCASE = 25 C UNLESS OTHERWISE SPECIFIED)
OFF
ON
(1)
DYNAMIC
Rthj-case
Thermal Resistance Junction-case Max
1.56
C/W
Rthj-amb
Thermal Resistance Junction-ambient Max
50
C/W
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
V
(BR)DSS
Drain-source
Breakdown Voltage
I
D
= 250 A, V
GS
= 0
30
V
I
DSS
Zero Gate Voltage
Drain Current (V
GS
= 0)
V
DS
= Max Rating
1
A
V
DS
= Max Rating, T
C
= 125 C
10
A
I
GSS
Gate-body Leakage
Current (V
DS
= 0)
V
GS
= 16V
100
nA
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
V
GS(th)
Gate Threshold Voltage
V
DS
= V
GS
, I
D
= 250A
1
V
R
DS(on)
Static Drain-source On
Resistance
V
GS
= 10 V, I
D
= 15 A
0.008
0.010
V
GS
= 4.5 V, I
D
= 15A
0.0095
0.013
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
g
fs
(1)
Forward Transconductance
V
DS
= 15V, I
D
= 15 A
30
S
C
iss
Input Capacitance
V
DS
= 25 V, f = 1 MHz, V
GS
= 0
2210
pF
C
oss
Output Capacitance
635
pF
C
rss
Reverse Transfer
Capacitance
138
pF
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STL30NF3LL
ELECTRICAL CHARACTERISTICS (CONTINUED)
SWITCHING ON
SWITCHING OFF
SOURCE DRAIN DIODE
Note: 1. Pulsed: Pulse duration = 300 s, duty cycle 1.5 %.
2. Pulse width limited by safe operating area.
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
t
d(on)
Turn-on Delay Time
V
DD
= 15 V, I
D
= 30 A
R
G
= 4.7
V
GS
= 4.5V
(see test circuit, Figure 1)
22
ns
t
r
Rise Time
130
ns
Q
g
Q
gs
Q
gd
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
V
DD
= 24 V, I
D
= 30 A,
V
GS
= 5 V
(see test circuit, Figure 1)
30
9
12.5
40
nC
nC
nC
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
t
d(off)
t
f
Turn-off-Delay Time
Fall Time
V
DD
= 15 V, I
D
= 30 A,
R
G
= 4.7
,
V
GS
= 4.5 V
(see test circuit, Figure 1)
36.5
36.5
ns
ns
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
I
SD
Source-drain Current
30
A
I
SDM
(2)
Source-drain Current (pulsed)
120
A
V
SD
(1)
Forward On Voltage
I
SD
= 15 A, V
GS
= 0
1.2
V
t
rr
Q
rr
I
RRM
Reverse Recovery Time
Reverse Recovery
ChargeReverse Recovery
Current
I
SD
= 30 A, di/dt = 100A/s,
V
DD
= 15 V, T
j
= 150C
(see test circuit, Figure 3)
65
105
3.4
ns
nC
A
STL30NF3LL
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Fig. 3: Test Circuit For Diode Recovery Behaviour
Fig. 2: Gate Charge test Circuit
Fig. 1: Switching Times Test Circuit For
Resistive Load
5/6
STL30NF3LL
DIM.
mm.
inch
MIN.
TYP
MAX.
MIN.
TYP.
MAX.
A
0.80
1.00
0.031
0.039
A1
0.02
0.001
b
0.35
0.47
0.014
0.018
C
1.61
0.063
D
5.00
0.197
D2
4.15
4.25
0.163
0.167
E
6.00
0.236
E2
3.55
3.65
0.140
0.144
e
1.27
0.049
F
1.99
0.078
G
2.20
0.086
H
0.40
0.015
I
0.219
0.0086
L
0.70
0.90
0.028
0.035
PowerFLATTM(6x5) MECHANICAL DATA
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