STP10NB20
STP10NB20FP
N - CHANNEL ENHANCEMENT MODE
PowerMESH
TM
MOSFET
s
TYPICAL R
DS(on)
= 0.3
s
EXTREMELY HIGH dv/dt CAPABILITY
s
100% AVALANCHE TESTED
s
VERY LOW INTRINSIC CAPACITANCES
s
GATE CHARGE MINIMIZED
DESCRIPTION
Using the latest high voltage MESH OVERLAY
TM
process,
SGS-Thomson
has
designed
an
advanced
family
of
power
MOSFETs
with
outstanding performances.
The
new
patent
pending strip layout coupled with the Company's
proprietary edge termination structure, gives the
lowest RDS(on) per area, exceptional avalanche
and dv/dt capabilities and unrivalled gate charge
and switching characteristics.
APPLICATIONS
s
HIGH CURRENT, HIGH SPEED SWITCHING
s
SWITCH MODE POWER SUPPLIES (SMPS)
s
DC-AC CONVERTERS FOR WELDING
EQUIPMENT AND UNINTERRUPTIBLE
POWER SUPPLIES AND MOTOR DRIVE
INTERNAL SCHEMATIC DIAGRAM
November 1997
TO-220
TO-220FP
1
2
3
1
2
3
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
Value
Uni t
ST P10NB20
STP10NB20FP
V
DS
Drain-source Voltage (V
GS
= 0)
200
V
V
DGR
Drain- gate Volt age (R
G S
= 20 k
)
200
V
V
GS
Gat e-source Voltage
30
V
I
D
Drain Current (continuous) at T
c
= 25
o
C
10
6
A
I
D
Drain Current (continuous) at T
c
= 100
o
C
6
4
A
I
DM
(
)
Drain Current (pulsed)
40
40
A
P
t ot
Tot al Dissipation at T
c
= 25
o
C
85
30
W
Derating Factor
0.68
0.24
W/
o
C
dv/dt(
1
)
Peak Diode Recovery voltage slope
5.5
5.5
V/ ns
V
ISO
Insulat ion W it hst and Voltage (DC)
2000
V
T
stg
Storage T emperat ure
-65 t o 150
o
C
T
j
Max. O perating Junction T emperat ure
150
o
C
(
) Pulse width limited by safe operating area
(
1
) I
SD
10A, di/dt
300 A/
s, V
DD
V
(BR)DSS
, Tj
T
JMAX
TYPE
V
DSS
R
DS(on)
I
D
STP10NB20
STP10NB20F P
200 V
200 V
< 0.40
< 0.40
10 A
6 A
1/9
THERMAL DATA
TO-220
T O220FP
R
t hj-ca se
Thermal Resistance Junction-case
Max
1.47
4. 17
o
C/W
R
t hj- amb
R
thc- si nk
T
l
Thermal Resistance Junction-ambient
Max
Thermal Resistance Case-sink
Typ
Maximum Lead Temperature For Soldering Purpose
62. 5
0.5
300
o
C/W
o
C/W
o
C
AVALANCHE CHARACTERISTICS
Symb ol
Parameter
Max Valu e
Uni t
I
AR
Avalanche Current, Repetitive or Not -Repet itive
(pulse width limited by T
j
max,
< 1%)
10
A
E
AS
Single Pulse Avalanche Energy
(starting T
j
= 25
o
C, I
D
= I
AR
, V
DD
= 50 V)
150
mJ
ELECTRICAL CHARACTERISTICS (T
case
= 25
o
C unless otherwise specified)
OFF
Symb ol
Parameter
Test Cond ition s
Mi n.
Typ .
Max.
Un it
V
(BR)DSS
Drain-source
Breakdown Volt age
I
D
= 250
A
V
GS
= 0
200
V
I
DSS
Zero G ate Voltage
Drain Current (V
GS
= 0)
V
DS
= Max Rating
V
DS
= Max Rating
T
c
= 125
o
C
1
10
A
A
I
GSS
Gate-body Leakage
Current (V
DS
= 0)
V
G S
=
30 V
100
nA
ON (
)
Symb ol
Parameter
Test Cond ition s
Mi n.
Typ .
Max.
Un it
V
GS(th)
Gate Threshold
Voltage
V
DS
= V
GS
I
D
= 250
A
3
4
5
V
R
DS( on)
St atic Drain-source On
Resistance
V
G S
= 10V
I
D
= 5 A
0. 30
0.40
I
D(o n)
On St ate Drain Current
V
DS
> I
D(on)
x R
DS(on) max
V
G S
= 10 V
10
A
DYNAMIC
Symb ol
Parameter
Test Cond ition s
Mi n.
Typ .
Max.
Un it
g
fs
(
)
Forward
Transconduct ance
V
DS
> I
D(on)
x R
DS(on) max
I
D
=5 A
3
4
S
C
iss
C
oss
C
rss
Input Capacitance
Output Capacit ance
Reverse T ransfer
Capacitance
V
DS
= 25 V
f = 1 MHz
V
GS
= 0
470
135
22
650
190
30
pF
pF
pF
STP10NB20/FP
2/9
ELECTRICAL CHARACTERISTICS (continued)
SWITCHING ON
Symb ol
Parameter
Test Cond ition s
Mi n.
Typ .
Max.
Un it
t
d(on)
t
r
Turn-on Time
Rise Time
V
DD
= 100 V
I
D
= 5 A
R
G
= 4.7
V
G S
= 10 V
(see test circuit, figure 3)
10
15
14
20
ns
ns
Q
g
Q
gs
Q
gd
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
V
DD
= 160 V
I
D
= 10 A V
G S
= 10 V
17
7.5
5.5
24
nC
nC
nC
SWITCHING OFF
Symb ol
Parameter
Test Cond ition s
Mi n.
Typ .
Max.
Un it
t
r(Vof f)
t
f
t
c
Of f-voltage Rise Time
Fall Time
Cross-over Time
V
DD
= 160 V
I
D
= 10 A
R
G
= 4.7
V
GS
= 10 V
(see test circuit, figure 5)
8
10
20
11
14
28
ns
ns
ns
SOURCE DRAIN DIODE
Symb ol
Parameter
Test Cond ition s
Mi n.
Typ .
Max.
Un it
I
SD
I
SDM
(
)
Source-drain Current
Source-drain Current
(pulsed)
10
40
A
A
V
SD
(
)
Forward On Voltage
I
SD
=10 A
V
GS
= 0
1.5
V
t
rr
Q
rr
I
RRM
Reverse Recovery
Time
Reverse Recovery
Charge
Reverse Recovery
Current
I
SD
=10 A
di/dt = 100 A/
s
V
DD
= 50 V
T
j
= 150
o
C
(see test circuit, figure 5)
170
980
11. 5
ns
nC
A
(
) Pulsed: Pulse duration = 300
s, duty cycle 1.5 %
(
) Pulse width limited by safe operating area
Safe Operating Area for TO-220
Safe Operating Area for TO-220FP
STP10NB20/FP
3/9
Thermal Impedance for TO-220
Output Characteristics
Transconductance
Thermal Impedance forTO-220FP
Transfer Characteristics
Static Drain-source On Resistance
STP10NB20/FP
4/9
Gate Charge vs Gate-source Voltage
Normalized Gate Threshold Voltage vs
Temperature
Source-drain Diode Forward Characteristics
Capacitance Variations
Normalized On Resistance vs Temperature
STP10NB20/FP
5/9
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