1/11
March 2002
STP11NM60A
STP11NM60AFP - STB11NM60A-1
N-CHANNEL 600V - 0.4
- 11A TO-220/TO-220FP/I
2
PAK
MDmeshTMPower MOSFET
n
TYPICAL R
DS
(on) = 0.4
n
HIGH dv/dt
n
LOW INPUT CAPACITANCE AND GATE
CHARGE
n
LOW GATE INPUT RESISTANCE
DESCRIPTION
The MDmeshTM
is a new revolutionary MOSFET
technology that associates the Multiple Drain pro-
cess with the Company's PowerMESHTM horizontal
layout. The resulting product has an outstanding low
on-resistance, impressively high dv/dt. The adoption
of the Company's proprietary strip technique yields
overall dynamic performance that is significantly
better than that of similar competition's products.
APPLICATIONS
The MDmeshTM family is very suitable for increasing
power density of high voltage converters allowing
system miniaturization and higher efficiencies.
ORDERING INFORMATION
TYPE
V
DSS
R
DS(on)
I
D
STP11NM60A
STP11NM60AFP
STB11NM60A-1
600 V
600 V
600 V
<0.45
<0.45
<0.45
11 A
11 A
11 A
SALES TYPE
MARKING
PACKAGE
PACKAGING
STP11NM60A
P11NM60A
TO-220
TUBE
STP11NM60AFP
P11NM60AFP
TO-220FP
TUBE
STB11NM60A-1
B11NM60A
I
2
PAK
TUBE
TO-220
1
2
3
1
2
3
I
2
PAK
1
2
3
TO-220FP
INTERNAL SCHEMATIC DIAGRAM
STP11NM60A/STP11NM60AFP/STB11NM60A-1
2/11
ABSOLUTE MAXIMUM RATINGS
(
l
) Pulse width limited by safe operating area
(1) I
SD
11A, di/dt
200A/s, V
DD
V
(BR)DSS
, T
j
T
JMAX.
(*) Limited only by maximum temperature allowed
THERMAL DATA
ON/OFF
Symbol
Parameter
Value
Unit
STP11NM60A
STB11NM60A-1
STP11NM60AFP
V
DS
Drain-source Voltage (V
GS
= 0)
600
V
V
DGR
Drain-gate Voltage (R
GS
= 20 k
)
600
V
V
GS
Gate- source Voltage
30
V
I
D
Drain Current (continuous) at T
C
= 25C
11
11 (*)
A
I
D
Drain Current (continuous) at T
C
= 100C
7
7 (*)
A
I
DM
(
l
)
Drain Current (pulsed)
44
44 (*)
A
P
TOT
Total Dissipation at T
C
= 25C
110
35
W
Derating Factor
0.88
0.28
W/C
dv/dt (1)
Peak Diode Recovery voltage slope
15
V/ns
V
ISO
Insulation Withstand Voltage (DC)
-
2500
V
T
j
T
stg
Operating Junction Temperature
Storage Temperature
-55 to 150
-55 to 150
C
C
TO-220 / I
2
PAK
TO-220-FP
Rthj-case
Thermal Resistance Junction-case Max
1.13
3.57
C/W
Rthj-amb
Thermal Resistance Junction-ambient Max
62.5
C/W
T
l
Maximum Lead Temperature For Soldering Purpose
300
C
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
V
(BR)DSS
Drain-source
Breakdown Voltage
I
D
= 250 A, V
GS
= 0
600
V
I
DSS
Zero Gate Voltage
Drain Current (V
GS
= 0)
V
DS
= Max Rating
V
DS
= Max Rating, T
C
= 125 C
1
10
A
A
I
GSS
Gate-body Leakage
Current (V
DS
= 0)
V
GS
= 20V
100
nA
V
GS(th)
Gate Threshold Voltage
V
DS
= V
GS
, I
D
= 250A
2
3
4
V
R
DS(on)
Static Drain-source On
Resistance
V
GS
= 10V, I
D
= 5.5 A
0.4
0.45
3/11
STP11NM60A/STP11NM60AFP/STB11NM60A-1
ELECTRICAL CHARACTERISTICS (TCASE =25C UNLESS OTHERWISE SPECIFIED)
DYNAMIC
SWITCHING ON
SWITCHING OFF
SOURCE DRAIN DIODE
Note: 1. Pulsed: Pulse duration = 300 s, duty cycle 1.5 %.
2. Pulse width limited by safe operating area.
3. C
oss eq.
is defined as a constant equivalent capacitance giving the same charging time as C
oss
when V
DS
increases from 0 to 80%
V
DSS
.
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
g
fs
(1)
Forward Transconductance
V
DS
= 15 V
,
I
D
= 5.5 A
10
S
C
iss
C
oss
C
rss
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
V
DS
= 25V, f = 1 MHz, V
GS
= 0
1211
248
21
pF
pF
pF
C
oss eq.
(3)
Equivalent Output
Capacitance
V
GS
= 0V, V
DS
= 0V to 480V
116
pF
R
G
Gate Input Resistance
f=1 MHz Gate DC Bias = 0
Test Signal Level = 20mV
Open Drain
1.9
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
t
d(on)
t
r
Turn-on Delay Time
Rise Time
V
DD
= 300 V, I
D
= 5.5 A
R
G
= 4.7
V
GS
= 10 V
(Resistive Load see, Figure 3)
14
15
ns
ns
Q
g
Q
gs
Q
gd
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
V
DD
= 480V, I
D
= 11 A,
V
GS
= 10V
35
9
14
49
nC
nC
nC
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
t
r(Voff)
t
f
t
c
Off-voltage Rise Time
Fall Time
Cross-over Time
V
DD
= 480V, I
D
= 11 A,
R
G
= 4.7
,
V
GS
= 10V
(Inductive Load see, Figure 5)
39
10
20
ns
ns
ns
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
I
SD
I
SDM
(2)
Source-drain Current
Source-drain Current (pulsed)
11
44
A
A
V
SD
(1)
Forward On Voltage
I
SD
= 11 A, V
GS
= 0
1.5
V
t
rr
Q
rr
I
RRM
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
I
SD
= 11 A, di/dt = 100A/s
V
DD
= 100V, T
j
= 150C
(see test circuit, Figure 5)
560
5.7
20.5
ns
C
A
STP11NM60A/STP11NM60AFP/STB11NM60A-1
4/11
Thermal Impedance for TO-220 / I2PAK
Transfer Characteristics
Output Characteristics
Safe Operating Area for TO-220FP
Safe Operating Area for TO-220 / I2PAK
Thermal Impedance for TO-220FP
5/11
STP11NM60A/STP11NM60AFP/STB11NM60A-1
Normalized Gate Thereshold Voltage vs Temp.
Normalized On Resistance vs Temperature
Capacitance Variations
Gate Charge vs Gate-source Voltage
Transconductance
Static Drain-source On Resistance
STP11NM60A/STP11NM60AFP/STB11NM60A-1
6/11
Source-drain Diode Forward Characteristics
7/11
STP11NM60A/STP11NM60AFP/STB11NM60A-1
Fig. 5: Test Circuit For Inductive Load Switching
And Diode Recovery Times
Fig. 4: Gate Charge test Circuit
Fig. 2: Unclamped Inductive Waveform
Fig. 1: Unclamped Inductive Load Test Circuit
Fig. 3: Switching Times Test Circuit For
Resistive Load
STP11NM60A/STP11NM60AFP/STB11NM60A-1
8/11
DIM.
mm
inch
MIN.
TYP.
MAX.
MIN.
TYP.
MAX.
A
4.40
4.60
0.173
0.181
C
1.23
1.32
0.048
0.051
D
2.40
2.72
0.094
0.107
D1
1.27
0.050
E
0.49
0.70
0.019
0.027
F
0.61
0.88
0.024
0.034
F1
1.14
1.70
0.044
0.067
F2
1.14
1.70
0.044
0.067
G
4.95
5.15
0.194
0.203
G1
2.4
2.7
0.094
0.106
H2
10.0
10.40
0.393
0.409
L2
16.4
0.645
L4
13.0
14.0
0.511
0.551
L5
2.65
2.95
0.104
0.116
L6
15.25
15.75
0.600
0.620
L7
6.2
6.6
0.244
0.260
L9
3.5
3.93
0.137
0.154
DIA.
3.75
3.85
0.147
0.151
L6
A
C
D
E
D1
F
G
L7
L2
Dia.
F1
L5
L4
H2
L9
F2
G1
TO-220 MECHANICAL DATA
P011C
9/11
STP11NM60A/STP11NM60AFP/STB11NM60A-1
DIM.
mm
inch
MIN.
TYP.
MAX.
MIN.
TYP.
MAX.
A
4.4
4.6
0.173
0.181
B
2.5
2.7
0.098
0.106
D
2.5
2.75
0.098
0.108
E
0.45
0.7
0.017
0.027
F
0.75
1
0.030
0.039
F1
1.15
1.7
0.045
0.067
F2
1.15
1.7
0.045
0.067
G
4.95
5.2
0.195
0.204
G1
2.4
2.7
0.094
0.106
H
10
10.4
0.393
0.409
L2
16
0.630
L3
28.6
30.6
1.126
1.204
L4
9.8
10.6
0.385
0.417
L6
15.9
16.4
0.626
0.645
L7
9
9.3
0.354
0.366
3
3.2
0.118
0.126
L2
A
B
D
E
H
G
L6
F
L3
G1
1 2 3
F2
F1
L7
L4
TO-220FP MECHANICAL DATA
STP11NM60A/STP11NM60AFP/STB11NM60A-1
10/11
DIM.
mm
inch
MIN.
TYP.
MAX.
MIN.
TYP.
MAX.
A
4.4
4.6
0.173
0.181
A1
2.49
2.69
0.098
0.106
B
0.7
0.93
0.027
0.036
B2
1.14
1.7
0.044
0.067
C
0.45
0.6
0.017
0.023
C2
1.23
1.36
0.048
0.053
D
8.95
9.35
0.352
0.368
e
2.4
2.7
0.094
0.106
E
10
10.4
0.393
0.409
L
13.1
13.6
0.515
0.531
L1
3.48
3.78
0.137
0.149
L2
1.27
1.4
0.050
0.055
L
L1
B2
B
D
E
A
C2
C
A1
L2
e
P011P5/E
TO-262 (I
2
PAK) MECHANICAL DATA
11/11
STP11NM60A/STP11NM60AFP/STB11NM60A-1
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the
consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from
its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications
mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information
previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or
systems without express written approval of STMicroelectronics.
The ST logo is a registered trademark of STMicroelectronics
2002 STMicroelectronics - Printed in Italy - All Rights Reserved
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