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TARGET DATA
July 2003
This is preliminary information on a new product forseen to be developped. Details are subject to change without notice
STB135N10
STP135N10
N-CHANNEL 100V - 0.007
- 135A DPAK/TO-220
LOW GATE CHARGE STripFETTM POWER MOSFET
s
TYPICAL R
DS
(on) = 0.007
s
EXCEPTIONAL dv/dt CAPABILITY
s
100% AVALANCHE TESTED
s
SURFACE-MOUNTING D
2
PAK (TO-263)
POWER PACKAGE IN TUBE (NO SUFFIX) OR
IN TAPE & REEL (SUFFIX "T4")
DESCRIPTION
This MOSFET is the result of STMicroelectronics's well
established and consolidated STripFET technology utiliz-
ing the most recent layout optimization. The device exhib-
its extremely low on-resistance, gate charge and diode's
reverse recovery charge Qrr making it the ideal switch in
a very large spectrum of applications such as Automotive,
Consumer, Telecom and Industrial.
APPLICATIONS
s
PRIMARY SWITCH IN TELECOM DC-DC
CONVERTER
s
HIGH-EFFICIENCY DC-DC CONVERTERS
s
42V AUTOMOTIVE APPLICATIONS
s
SYNCHRONOUS RECTIFICATION
s
DIESEL INJECTION
s
PWM UPS AND MOTOR CONTROL
TYPE
V
DSS
R
DS(on)
I
D
STB135N10
STP135N10
100 V
100 V
<0.009
<0.009
135 A
(*)
135 A
(*)
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
(1)
Pulse width limited by safe operating area.
(*)
Value limited by wire bonding
(2) I
SD
40A, di/dt
600A/s, V
DD
B
VDSS
, T
j
T
JMAX.
(3) Starting T
j
= 25
o
C, I
D
= 40A, V
DD
= 50V
Symbol
Parameter
Value
Unit
V
DS
Drain-source Voltage (V
GS
= 0)
100
V
V
DGR
Drain-gate Voltage (R
GS
= 20 k
)
100
V
V
GS
Gate- source Voltage
20
V
I
D(*)
Drain Current (continuous) at T
C
= 25C
135
A
I
D
Drain Current (continuous) at T
C
= 100C
96
A
I
DM(1)
Drain Current (pulsed)
540
A
P
tot
Total Dissipation at T
C
= 25C
150
W
Derating Factor
1
W/C
dv/dt
(2)
Peak Diode Recovery voltage slope
TBD
V/ns
E
AS (3)
Single Pulse Avalanche Energy
TBD
mJ
T
stg
Storage Temperature
-55 to 175
C
T
j
Operating Junction Temperature
1
2
3
TO-220
1
3
D
2
PAK
TO-263
(Suffix "T4")
STB135N10 STP135N10
2/8
THERMAL DATA
ELECTRICAL CHARACTERISTICS (T
CASE
= 25 C UNLESS OTHERWISE SPECIFIED)
OFF
ON
(5)
DYNAMIC
Rthj-case
Rthj-amb
T
l
Thermal Resistance Junction-case
Thermal Resistance Junction-ambient
Maximum Lead Temperature For Soldering Purpose
Max
Max
1
62.5
300
C/W
C/W
C
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
V
(BR)DSS
Drain-source
Breakdown Voltage
I
D
= 250 A, V
GS
= 0
100
V
I
DSS
Zero Gate Voltage
Drain Current (V
GS
= 0)
V
DS
= Max Rating
V
DS
= Max Rating T
C
= 125C
1
10
A
A
I
GSS
Gate-body Leakage
Current (V
DS
= 0)
V
GS
= 20V
100
nA
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
V
GS(th)
Gate Threshold Voltage
V
DS
= V
GS
I
D
= 250 A
2
4
V
R
DS(on)
Static Drain-source On
Resistance
V
GS
= 10 V
I
D
= 67.5 A
0.007
0.009
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
g
fs (5)
Forward Transconductance
V
DS
=
25 V
I
D
= 67.5 A
TBD
S
C
iss
C
oss
C
rss
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
V
DS
= 25V f = 1 MHz V
GS
= 0
6350
890
250
pF
pF
pF
3/8
STB135N10 STP135N10
SWITCHING ON
SWITCHING OFF
SOURCE DRAIN DIODE
(1 )
Pulse width limited by safe operating area.
(5)
Pulsed: Pulse duration = 300 s, duty cycle 1.5 %.
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
t
d(on)
t
r
Turn-on Delay Time
Rise Time
V
DD
= 50 V
I
D
= 67.5 A
R
G
= 4.7
V
GS
= 10 V
(Resistive Load, Figure 3)
TBD
TBD
ns
ns
Q
g
Q
gs
Q
gd
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
V
DD
= 50 V I
D
= 135 A V
GS
= 5 V
TBD
TBD
TBD
95
nC
nC
nC
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
t
d(off)
t
f
Turn-off Delay Time
Fall Time
V
DD
= 50 V
I
D
= 67.5 A
R
G
= 4.7
,
V
GS
= 10 V
(Resistive Load, Figure 3)
TBD
TBD
ns
ns
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
I
SD
I
SDM
(1)
Source-drain Current
Source-drain Current (pulsed)
135
540
A
A
V
SD
(5)
Forward On Voltage
I
SD
= 135 A V
GS
= 0
1.3
V
t
rr
Q
rr
I
RRM
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
I
SD
= 135 A
di/dt = 100A/s
V
DD
= 25 V
T
j
= 150C
(see test circuit, Figure 5)
TBD
TBD
TBD
ns
C
A
ELECTRICAL CHARACTERISTICS (continued)
STB135N10 STP135N10
4/8
Fig. 1: Unclamped Inductive Load Test Circuit
Fig. 1: Unclamped Inductive Load Test Circuit
Fig. 2: Unclamped Inductive Waveform
Fig. 3: Switching Times Test Circuits For Resistive
Load
Fig. 4: Gate Charge test Circuit
Fig. 5: Test Circuit For Inductive Load Switching
And Diode Recovery Times
5/8
STB135N10 STP135N10
DIM.
mm.
inch.
MIN.
TYP. MAX.
MIN.
TYP. TYP.
A
4.4
4.6
0.173
0.181
A1
2.49
2.69
0.098
0.106
A2
0.03
0.23
0.001
0.009
B
0.7
0.93
0.028
0.037
B2
1.14
1.7
0.045
0.067
C
0.45
0.6
0.018
0.024
C2
1.21
1.36
0.048
0.054
D
8.95
9.35
0.352
0.368
D1
8
0.315
E
10
10.4
0.394
0.409
E1
8.5
0.334
G
4.88
5.28
0.192
0.208
L
15
15.85
0.591
0.624
L2
1.27
1.4
0.050
0.055
L3
1.4
1.75
0.055
0.069
M
2.4
3.2
0.094
0.126
R
0.4
0.015
V2
0
8
0
8
D
2
PAK MECHANICAL DATA
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