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December 2000
STP14NF06
N-CHANNEL 60V - 0.1
- 14A TO-220
STripFETTM POWER MOSFET
(1) I
SD
7A, di/dt
300A/s, V
DD
V
(BR)DSS
, T
j
T
JMAX.
(2) Starting T
j
= 25C, I
D
= 114A, V
DD
= 15V
s
TYPICAL R
DS
(on) = 0.1
s
EXCEPTIONAL dv/dt CAPABILITY
s
LOW GATE CHARGE AT 100 C
s
APPLICATION ORIENTED
CHARACTERIZATION
DESCRIPTION
This Power MOSFET is the latest development of
STMicroelectronics unique "Single Feature SizeTM"
strip-based process. The resulting transistor shows
extremely high packing density for low on-resis-
tance, rugged avalanche characteristics and less
critical alignment steps therefore a remarkable
manufacturing reproducibility.
APPLICATIONS
s
DC-DC & DC-AC CONVERTERS
s
MOTOR CONTROL, AUDIO AMPLIFIERS
s
HIGH CURRENT, HIGH SPEED SWITCHING
s
SOLENOID AND RELAY DRIVERS
s
AUTOMOTIVE ENVIRONMENT
ABSOLUTE MAXIMUM RATINGS
(
q
) Pulse width limited by safe operating area
TYPE
V
DSS
R
DS(on)
I
D
STP14NF10
60 V
< 0.12
14 A
Symbol
Parameter
Value
Unit
V
DS
Drain-source Voltage (V
GS
= 0)
60
V
V
DGR
Drain-gate Voltage (R
GS
= 20 k
)
60
V
V
GS
Gate- source Voltage
20
V
I
D
Drain Current (continuos) at T
C
= 25C
14
A
I
D
Drain Current (continuos) at T
C
= 100C
10
A
I
DM
(
q
)
Drain Current (pulsed)
56
A
P
TOT
Total Dissipation at T
C
= 25C
45
W
Derating Factor
0.3
W/C
dv/dt (1)
Peak Diode Recovery voltage slope
6
V/ns
E
AS
(2)
Single Pulse Avalanche Energy
50
mJ
T
stg
Storage Temperature
65 to 175
C
T
j
Max. Operating Junction Temperature
175
C
TO-220
1
2
3
INTERNAL SCHEMATIC DIAGRAM
STP14NF06
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THERMAL DATA
ELECTRICAL CHARACTERISTICS (TCASE = 25 C UNLESS OTHERWISE SPECIFIED)
OFF
ON
(1)
DYNAMIC
Rthj-case
Thermal Resistance Junction-case Max
3.33
C/W
Rthj-amb
Thermal Resistance Junction-ambient Max
62.5
C/W
T
l
Maximum Lead Temperature For Soldering Purpose
300
C
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
V
(BR)DSS
Drain-source
Breakdown Voltage
I
D
= 250 A, V
GS
= 0
60
V
I
DSS
Zero Gate Voltage
Drain Current (V
GS
= 0)
V
DS
= Max Rating
1
A
V
DS
= Max Rating, T
C
= 125 C
10
A
I
GSS
Gate-body Leakage
Current (V
DS
= 0)
V
GS
= 20V
100
nA
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
V
GS(th)
Gate Threshold Voltage
V
DS
= V
GS
, I
D
= 250A
2
V
R
DS(on)
Static Drain-source On
Resistance
V
GS
= 10V, I
D
= 7 A
0.10
0.12
I
D(on)
On State Drain Current
V
DS
> I
D(on)
x R
DS(on)max,
V
GS
= 10V
14
A
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
g
fs
(1)
Forward Transconductance
V
DS
> I
D(on)
x R
DS(on)max,
I
D
= 7 A
7
S
C
iss
Input Capacitance
V
DS
= 25V, f = 1 MHz, V
GS
= 0
361
pF
C
oss
Output Capacitance
54
pF
C
rss
Reverse Transfer
Capacitance
21
pF
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STP14NF06
ELECTRICAL CHARACTERISTICS (CONTINUED)
SWITCHING ON
SWITCHING OFF
SOURCE DRAIN DIODE
Note: 1. Pulsed: Pulse duration = 300 s, duty cycle 1.5 %.
2. Pulse width limited by safe operating area.
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
t
d(on)
Turn-on Delay Time
V
DD
= 30V, I
D
= 7 A
R
G
= 4.7
V
GS
= 10V
(see test circuit, Figure 3)
12.5
ns
t
r
Rise Time
32
ns
Q
g
Q
gs
Q
gd
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
V
DD
= 48 V, I
D
= 14 A,
V
GS
= 10V
11.2
3.7
3.2
15
nC
nC
nC
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
t
d(off)
t
f
Turn-off-Delay Time
Fall Time
V
DD
= 30 V, I
D
= 7 A,
R
G
= 4.7
,
V
GS
= 10V
(see test circuit, Figure 3)
30
9.5
ns
ns
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
I
SD
Source-drain Current
14
A
I
SDM
(1)
Source-drain Current (pulsed)
56
A
V
SD
(2)
Forward On Voltage
I
SD
= 14 A, V
GS
= 0
1.3
V
t
rr
Q
rr
I
RRM
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
I
SD
= 14 A, di/dt = 100A/s,
V
DD
= 30 V, T
j
= 150C
(see test circuit, Figure 5)
38
61
3.2
ns
nC
A
Safe Operating Area
Thermal Impedence
STP14NF06
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Gate Charge vs Gate-source Voltage
Capacitance Variations
Transconductance
Static Drain-source On Resistance
Transfer Characteristics
Output Characteristics
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STP14NF06
Normalized Gate Thereshold Voltage vs Temp.
Source-drain Diode Forward Characteristics
Normalized On Resistance vs Temperature
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