STP19N06L
STP19N06LFI
N - CHANNEL ENHANCEMENT MODE
LOW THRESHOLD POWER MOS TRANSISTOR
s
TYPICAL R
DS(on)
= 0.085
s
AVALANCHE RUGGED TECHNOLOGY
s
100% AVALANCHE TESTED
s
REPETITIVE AVALANCHE DATA AT 100
o
C
s
LOW GATE CHARGE
s
LOGIC LEVEL COMPATIBLE INPUT
s
175
o
C OPERATING TEMPERATURE
s
APPLICATION ORIENTED
CHARACTERIZATION
APPLICATIONS
s
HIGH CURRENT, HIGH SPEED SWITCHING
s
SOLENOID AND RELAY DRIVERS
s
REGULATORS
s
DC-DC & DC-AC CONVERTERS
s
MOTOR CONTROL, AUDIO AMPLIFIERS
s
AUTOMOTIVE ENVIRONMENT (INJECTION,
ABS, AIR-BAG, LAMPDRIVERS, Etc.)
INTERNAL SCHEMATIC DIAGRAM
TYPE
V
D SS
R
DS( on)
I
D
STP19N06L
STP19N06LFI
60 V
60 V
< 0.1
< 0.1
19 A
13 A
1
2
3
TO-220 ISOWATT220
February 1995
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
Value
Unit
STP19N06L
STP19N06LFI
V
D S
Drain-source Voltage (V
GS
= 0)
60
V
V
DGR
Drain- gate Voltage (R
GS
= 20 k
)
60
V
V
GS
Gate-source Voltage
15
V
I
D
Drain Current (continuous) at T
c
= 25
o
C
19
13
A
I
D
Drain Current (continuous) at T
c
= 100
o
C
13
9
A
I
D M
(
)
Drain Current (pulsed)
76
76
A
P
tot
Total Dissipation at T
c
= 25
o
C
80
35
W
Derating Factor
0.53
0.23
W/
o
C
V
ISO
Insulation Withstand Voltage (DC)
2000
V
T
stg
Storage Temperature
-65 to 175
o
C
T
j
Max. Operating Junction Temperature
175
o
C
(
) Pulse width limited by safe operating area
1
2
3
1/7
THERMAL DATA
TO-220
ISOWATT220
R
thj-case
Thermal Resistance Junction-case Max
1.88
4.29
o
C/W
R
thj- amb
R
t hc- sink
T
l
Thermal Resistance Junction-ambient Max
Thermal Resistance Case-sink Typ
Maximum Lead Temperature For Soldering Purpose
62.5
0.5
300
o
C/W
o
C/W
o
C
AVALANCHE CHARACTERISTICS
Symbol
Parameter
Max Value
Unit
I
A R
Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by T
j
max,
< 1%)
19
A
E
AS
Single Pulse Avalanche Energy
(starting T
j
= 25
o
C, I
D
= I
AR
, V
D D
= 25 V)
76
mJ
E
AR
Repetitive Avalanche Energy
(pulse width limited by T
j
max,
< 1%)
19
mJ
I
A R
Avalanche Current, Repetitive or Not-Repetitive
(T
c
= 100
o
C, pulse width limited by T
j
max,
< 1%)
13
A
ELECTRICAL CHARACTERISTICS (T
case
= 25
o
C unless otherwise specified)
OFF
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
V
( BR) DSS
Drain-source
Breakdown Voltage
I
D
= 250
A V
GS
= 0
60
V
I
DS S
Zero Gate Voltage
Drain Current (V
GS
= 0)
V
D S
= Max Rating
V
D S
= Max Rating x 0.8 T
c
= 125
o
C
250
1000
A
A
I
GSS
Gate-body Leakage
Current (V
D S
= 0)
V
GS
=
15 V
100
nA
ON (
)
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
V
GS(th)
Gate Threshold Voltage V
D S
= V
GS
I
D
= 250
A
1
1.7
2.5
V
R
DS( on)
Static Drain-source On
Resistance
V
GS
= 5 V I
D
= 9.5 A
V
GS
= 5 V I
D
= 9.5 A T
c
= 100
o
C
0.085
0.1
0.2
I
D( on)
On State Drain Current
V
D S
> I
D( on)
x R
D S(on) max
V
GS
= 10 V
19
A
DYNAMIC
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
g
fs
(
)
Forward
Transconductance
V
D S
> I
D( on)
x R
D S(on) max
I
D
= 9.5 A
7
9
S
C
iss
C
oss
C
rss
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
V
D S
= 25 V f = 1 MHz V
GS
= 0
700
230
80
900
300
100
pF
pF
pF
STP19N06L/FI
2/7
ELECTRICAL CHARACTERISTICS (continued)
SWITCHING ON
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
t
d(on)
t
r
Turn-on Time
Rise Time
V
D D
= 30 V I
D
= 9.5 A
R
G
= 4.7
V
GS
= 5 V
(see test circuit, figure 3)
15
165
21
230
ns
ns
(di/dt)
on
Turn-on Current Slope
V
D D
= 40 V I
D
= 19 A
R
G
= 47
V
GS
= 5 V
(see test circuit, figure 5)
70
A/
s
Q
g
Q
gs
Q
gd
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
V
D D
= 40 V I
D
= 19 A V
GS
= 5 V
18
7
9
26
nC
nC
nC
SWITCHING OFF
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
t
r(Vof f)
t
f
t
c
Off-voltage Rise Time
Fall Time
Cross-over Time
V
D D
= 40 V I
D
= 19 A
R
G
= 47
V
GS
= 5 V
(see test circuit, figure 5)
50
95
165
70
135
230
ns
ns
ns
SOURCE DRAIN DIODE
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
I
S D
I
SDM
(
)
Source-drain Current
Source-drain Current
(pulsed)
19
76
A
A
V
S D
(
)
Forward On Voltage
I
SD
= 19 A V
GS
= 0
1.6
V
t
rr
Q
r r
I
R RM
Reverse Recovery
Time
Reverse Recovery
Charge
Reverse Recovery
Current
I
SD
= 19 A di/dt = 100 A/
s
V
D D
= 30 V T
j
= 150
o
C
(see test circuit, figure 5)
60
0.13
4.6
ns
C
A
(
) Pulsed: Pulse duration = 300
s, duty cycle 1.5 %
(
) Pulse width limited by safe operating area
STP19N06L/FI
3/7
Fig. 2: Unclamped Inductive Waveforms
Fig. 3: Switching Times Test Circuits For
Resistive Load
Fig. 4: Gate Charge Test Circuit
Fig. 5: Test Circuit For Inductive Load Switching
And Diode Reverse Recovery Time
Fig. 1: Unclamped Inductive Load Test Circuits
STP19N06L/FI
4/7
DIM.
mm
inch
MIN.
TYP.
MAX.
MIN.
TYP.
MAX.
A
4.40
4.60
0.173
0.181
C
1.23
1.32
0.048
0.051
D
2.40
2.72
0.094
0.107
D1
1.27
0.050
E
0.49
0.70
0.019
0.027
F
0.61
0.88
0.024
0.034
F1
1.14
1.70
0.044
0.067
F2
1.14
1.70
0.044
0.067
G
4.95
5.15
0.194
0.203
G1
2.4
2.7
0.094
0.106
H2
10.0
10.40
0.393
0.409
L2
16.4
0.645
L4
13.0
14.0
0.511
0.551
L5
2.65
2.95
0.104
0.116
L6
15.25
15.75
0.600
0.620
L7
6.2
6.6
0.244
0.260
L9
3.5
3.93
0.137
0.154
DIA.
3.75
3.85
0.147
0.151
L6
A
C
D
E
D1
F
G
L7
L2
Dia.
F1
L5
L4
H2
L9
F2
G1
TO-220 MECHANICAL DATA
P011C
STP19N06L/FI
5/7
PDF 
ZIP