STP3N100
STP3N100FI
N - CHANNEL ENHANCEMENT MODE
POWER MOS TRANSISTOR
s
AVALANCHE RUGGED TECHNOLOGY
s
100% AVALANCHE TESTED
s
REPETITIVE AVALANCHE DATA AT 100
o
C
s
LOW INPUT CAPACITANCE
s
LOW GATE CHARGE
s
APPLICATION ORIENTED
CHARACTERIZATION
APPLICATIONS
s
HIGH CURRENT, HIGH SPEED SWITCHING
s
SWITCH MODE POWER SUPPLIES (SMPS)
s
CONSUMER AND INDUSTRIAL LIGHTING
s
DC-AC INVERTERS FOR WELDING
EQUIPMENT AND UNINTERRUPTIBLE
POWER SUPPLY (UPS)
INTERNAL SCHEMATIC DIAGRAM
1
2
3
TO-220 ISOWATT220
December 1996
TYPE
V
D SS
R
DS( on)
I
D
STP3N100
STP3N100FI
1000 V
1000 V
< 5
< 5
3.5 A
2 A
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
Value
Unit
STP3N100
STP3N100FI
V
D S
Drain-source Voltage (V
GS
= 0)
1000
V
V
DGR
Drain- gate Voltage (R
GS
= 20 k
)
1000
V
V
GS
Gate-source Voltage
20
V
I
D
Drain Current (continuous) at T
c
= 25
o
C
3.5
2
A
I
D
Drain Current (continuous) at T
c
= 100
o
C
2
1.2
A
I
D M
(
)
Drain Current (pulsed)
14
14
A
P
tot
Total Dissipation at T
c
= 25
o
C
100
40
W
Derating Factor
0.8
0.32
W/
o
C
V
ISO
Insulation Withstand Voltage (DC)
2000
V
T
stg
Storage Temperature
-65 to 150
o
C
T
j
Max. Operating Junction Temperature
150
o
C
(
) Pulse width limited by safe operating area
1
2
3
1/10
THERMAL DATA
TO-220
ISOWATT220
R
thj-case
Thermal Resistance Junction-case Max
1.25
3.12
o
C/W
R
thj- amb
R
t hc- sink
T
l
Thermal Resistance Junction-ambient Max
Thermal Resistance Case-sink Typ
Maximum Lead Temperature For Soldering Purpose
62.5
0.5
300
o
C/W
o
C/W
o
C
AVALANCHE CHARACTERISTICS
Symbol
Parameter
Max Value
Unit
I
A R
Avalanche Current
(repetitive or not-repetitive, T
j
= 25
o
C)
3.5
A
E
AS
Single Pulse Avalanche Energy
(starting T
j
= 25
o
C, I
D
= I
AR
, V
D D
= 25 V)
130
mJ
E
AR
Repetitive Avalanche Energy
(pulse width limited by T
j
max,
< 1%)
6
mJ
I
A R
Avalanche Current
(repetitive or not-repetitive, T
j
= 100
o
C)
2
A
ELECTRICAL CHARACTERISTICS (T
case
= 25
o
C unless otherwise specified)
OFF
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
V
( BR) DSS
Drain-source
Breakdown Voltage
I
D
= 250
A V
GS
= 0
1000
V
I
DS S
Zero Gate Voltage
Drain Current (V
GS
= 0)
V
D S
= Max Rating
V
D S
= Max Rating x 0.8 T
c
= 125
o
C
25
250
A
A
I
GSS
Gate-body Leakage
Current (V
D S
= 0)
V
GS
=
20 V
100
nA
ON (
)
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
V
GS(th)
Gate Threshold Voltage V
D S
= V
GS
I
D
= 250
A
2
3
4
V
R
DS( on)
Static Drain-source On
Resistance
V
GS
= 10V I
D
= 1.5 A
5
I
D( on)
On State Drain Current
V
D S
> I
D( on)
x R
D S(on) max
V
GS
= 10 V
3.5
A
DYNAMIC
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
g
fs
Forward
Transconductance
V
D S
> I
D( on)
x R
D S(on) max
I
D
= 1.5 A
1
1.8
S
C
iss
C
oss
C
rss
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
V
D S
= 25 V f = 1 MHz V
GS
= 0
750
80
25
950
110
40
pF
pF
pF
STP3N100/FI
2/10
ELECTRICAL CHARACTERISTICS (continued)
SWITCHING ON
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
t
d(on)
t
r
Turn-on Time
Rise Time
V
D D
= 400 V I
D
= 1.8 A
R
G
= 50
V
GS
= 10 V
(see test circuit, figure 3)
70
70
90
90
ns
ns
(di/dt)
on
Turn-on Current Slope
V
D D
= 600 V I
D
= 3.5 A
R
G
= 50
V
GS
= 10 V
(see test circuit, figure 5)
100
A/
s
Q
g
Q
gs
Q
gd
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
V
D D
= 400 V I
D
= 3.5 A V
GS
= 10 V
48
7
24
60
nC
nC
nC
SWITCHING OFF
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
t
r(Vof f)
t
f
t
c
Off-voltage Rise Time
Fall Time
Cross-over Time
V
D D
= 600 V I
D
= 3.5 A
R
G
= 50
V
GS
= 10 V
(see test circuit, figure 5)
90
60
130
115
75
165
ns
ns
ns
SOURCE DRAIN DIODE
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
I
S D
I
SDM
(
)
Source-drain Current
Source-drain Current
(pulsed)
3.5
14
A
A
V
SD
Forward On Voltage
I
SD
= 3.5 A V
GS
= 0
2
V
t
rr
Q
r r
I
R RM
Reverse Recovery
Time
Reverse Recovery
Charge
Reverse Recovery
Current
I
SD
= 3.5 A di/dt = 100 A/
s
V
D D
= 100 V T
j
= 150
o
C
(see test circuit, figure 5)
900
10
23
ns
C
A
(
) Pulsed: Pulse duration = 300
s, duty cycle 1.5 %
(
) Pulse width limited by safe operating area
Safe Operating Areas For TO-220
Safe Operating Areas For ISOWATT220
STP3N100/FI
3/10
Thermal Impedeance For TO-220
Derating Curve For TO-220
Output Characteristics
Thermal Impedance For ISOWATT220
Derating Curve For ISOWATT220
Transfer Characteristics
STP3N100/FI
4/10
Transconductance
Static Drain-source On Resistance
Gate Charge vs Gate-source Voltage
Capacitance Variations
Normalized On Resistance vs Temperature
Normalized Gate Threshold Voltage vs
Temperature
STP3N100/FI
5/10
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