STP80N05-09
N - CHANNEL ENHANCEMENT MODE
"ULTRA HIGH DENSITY" POWER MOS TRANSISTOR
s
ULTRA HIGH DENSITY TECHNOLOGY
s
TYPICAL R
DS(on)
= 7 m
s
AVALANCHE RUGGED TECHNOLOGY
s
LOW GATE CHARGE
s
HIGH CURRENT CAPABILITY
s
175
o
C OPERATING TEMPERATURE
APPLICATIONS
s
SYNCROUNOUS RECTIFIERS
s
HIGH CURRENT, HIGH SPEED SWITCHING
s
DC-DC & DC-AC CONVERTER ABSOLUTE
MAXIMUM RATINGS
INTERNAL SCHEMATIC DIAGRAM
March 1997
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
Value
Unit
V
DS
Drain-source Vo ltage (V
GS
= 0)
50
V
V
DGR
Drain- gate Vol tage (R
GS
= 20 k
)
50
V
V
GS
Gate-s ource Vol tage
20
V
I
D
Drain Current (conti nuous) at T
c
= 25
o
C
80
A
I
D
Drain Current (conti nuous) at T
c
= 100
o
C
60
A
I
DM
(
)
Drain Current (pul sed)
320
A
P
t ot
Total Dis sipation at T
c
= 25
o
C
150
W
Derati ng Fac tor
1
W/
o
C
dV/dt(
1
)
Peak Di ode Recov ery vo ltage slo pe
5
V/ns
T
stg
Storage Temperature
-65 to 175
o
C
T
j
Max. Operating Junction Temperature
175
o
C
(
) Pulse width limited by safe operating area
(
1
) I
SD
60 A, di/dt
200 A/ms, V
DD
V
(BR)DSS
, T
J
T
JMAX
TYPE
V
DS S
R
DS(o n)
I
D
STP80N05-09
50 V
< 0.009
80 A
1
2
3
TO-220
1/9
THERMAL DATA
R
t hj-case
R
th j-amb
R
thc-sin k
T
l
Thermal Resist ance Junc tion-case
Max
Thermal Resist ance Junc tion-ambi ent
Max
Thermal Resist ance Case -sink
Typ
Max imum Lead Temperature For Sol dering Pu rpose
1
62.5
0.5
300
o
C/W
o
C/W
o
C/W
o
C
AVALANCHE CHARACTERISTICS
Symbol
Parameter
Max Va lue
Unit
I
AR
Avalanche Current, Repeti tive or Not-Repetit ive
(pulse width l imit ed by T
j
max ,
< 1%)
60
A
E
AS
Sin gle Pul se Aval anc he Energy
(starti ng T
j
= 25
o
C, I
D
= I
AR
, V
DD
= 25 V)
600
mJ
ELECTRICAL CHARACTERISTICS (T
case
= 25
o
C unless otherwise specified)
OFF
Symbol
P arameter
Test Conditions
Min.
Typ.
Max.
Unit
V
(BR)DSS
Drain-so urce
Breakdown Vo ltage
I
D
= 250
A
V
GS
= 0
50
V
I
DS S
Zero G ate Vo ltage
Drain Current (V
G S
= 0)
V
DS
= Max Rati ng
V
DS
= Max Rati ng
T
c
= 125
o
C
1
10
A
A
I
GSS
Gate-body Leak age
Current (V
DS
= 0)
V
G S
=
20 V
100
nA
ON (
)
Symbol
P arameter
Test Conditions
Min.
Typ.
Max.
Unit
V
GS( th)
Gate Threshold Vo ltage V
DS
= V
GS
I
D
= 250
A
2
3
4
V
R
DS( on)
Static Drai n-s ource On
Resi stance
V
G S
= 10V
I
D
= 40 A
0.007
0.009
I
D(on)
On State Drai n Current
V
DS
> I
D(on)
x R
DS(on)max
V
G S
= 10 V
80
A
DYNAMIC
Symbol
P arameter
Test Conditions
Min.
Typ.
Max.
Unit
g
fs
(
)
Forward
Transconductance
V
DS
> I
D(on)
x R
DS(on)max
I
D
= 40 A
25
S
C
iss
C
oss
C
rss
Input Capac itance
Output Capaci tance
Reverse Trans fer
Capacitance
V
DS
= 25 V
f = 1 MHz
V
GS
= 0
5900
900
230
pF
pF
pF
STP80N05-09
2/9
ELECTRICAL CHARACTERISTICS (continued)
SWITCHING ON
Symbol
P arameter
Test Conditions
Min.
Typ.
Max.
Unit
t
d(on)
t
r
Turn-on Time
Rise Time
V
DD
= 30 V
I
D
= 40 A
R
G
= 4.7
V
GS
= 10 V
(see test c ircui t, figure 3)
32
160
42
200
ns
ns
(di/ dt)
on
Turn-on Current S lope
V
DD
= 48 V
I
D
= 80 A
R
G
=5 0
V
GS
= 10 V
(see test c ircui t, figure 5)
240
A /
s
Q
g
Q
gs
Q
gd
Total Ga te Charge
Gate-Source Charge
Gate-Drain Charge
V
DD
= 40 V
I
D
= 80 A
V
GS
= 10 V
230
30
60
280
nC
nC
nC
SWITCHING OFF
Symbol
P arameter
Test Conditions
Min.
Typ.
Max.
Unit
t
r(Vof f)
t
f
t
c
Off-volt age Ri se Time
Fal l Ti me
Cross-over Time
V
DD
= 48 V
I
D
= 40 A
R
G
= 4.7
V
GS
= 10 V
(see test c ircui t, figure 5)
35
175
240
46
230
300
ns
ns
ns
SOURCE DRAIN DIODE
Symbol
P arameter
Test Conditions
Min.
Typ.
Max.
Unit
I
SD
I
SD M
(
)
Source-drain Current
Source-drain Current
(pulsed)
80
320
A
A
V
SD
(
)
Forward On Voltage
I
SD
= 80 A
V
GS
= 0
1.5
V
t
rr
Q
rr
I
RRM
Reverse Recovery
Tim e
Reverse Recovery
Charge
Reverse Recovery
Current
I
SD
= 80 A
di/ dt = 100 A/
s
V
R
= 30 V
T
j
= 150
o
C
(see test c ircui t, figure 5)
125
0.6
10
ns
C
A
(
) Pulsed: Pulse duration = 300
s, duty cycle 1.5 %
(
) Pulse width limited by safe operating area
Safe Operating Area
Thermal Impedance
STP80N05-09
3/9
Derating Curve
Transfer Characteristics
Static Drain-source On Resistance
Output Characteristics
Transconductance
Gate Charge vs Gate-source Voltage
STP80N05-09
4/9
Capacitance Variations
Normalized On Resistance vs Temperature
Turn-off Drain-source Voltage Slope
Normalized Gate Threshold Voltage vs
Temperature
Turn-on Current Slope
Cross-over Time
STP80N05-09
5/9
Switching Safe Operating Area
Source-drain Diode Forward Characteristics
Fig. 1: Unclamped Inductive Load Test Circuit
Accidental Overload Area
Fig. 2: Unclamped Inductive Waveform
STP80N05-09
6/9
Fig. 3: Switching Times Test Circuits For
Resistive Load
Fig. 5: Test Circuit For Inductive Load Switching
And DIode Recovery Times
Fig. 4: Gate Charge test Circuit
STP80N05-09
7/9
DIM.
mm
inch
MIN.
TYP.
MAX.
MIN.
TYP.
MAX.
A
4.40
4.60
0.173
0.181
C
1.23
1.32
0.048
0.051
D
2.40
2.72
0.094
0.107
D1
1.27
0.050
E
0.49
0.70
0.019
0.027
F
0.61
0.88
0.024
0.034
F1
1.14
1.70
0.044
0.067
F2
1.14
1.70
0.044
0.067
G
4.95
5.15
0.194
0.203
G1
2.4
2.7
0.094
0.106
H2
10.0
10.40
0.393
0.409
L2
16.4
0.645
L4
13.0
14.0
0.511
0.551
L5
2.65
2.95
0.104
0.116
L6
15.25
15.75
0.600
0.620
L7
6.2
6.6
0.244
0.260
L9
3.5
3.93
0.137
0.154
DIA.
3.75
3.85
0.147
0.151
L6
A
C
D
E
D1
F
G
L7
L2
Dia.
F1
L5
L4
H2
L9
F2
G1
TO-220 MECHANICAL DATA
P011C
STP80N05-09
8/9
Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the
consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No
license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned
in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied.
SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express
written approval of SGS-THOMSON Microelectonics.
1996 SGS-THOMSON Microelectronics - Printed in Italy - All Rights Reserved
SGS-THOMSON Microelectronics GROUP OF COMPANIES
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STP80N05-09
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