1/10
January 2003
NEW DATASHEET ACCORDING TO PCN DSG/CT/2C13 MARKING: P80NF55L-06 @ B80NF55L-06 @
STB80NF55L-06
STP80NF55L-06
N-CHANNEL 55V - 0.005
- 80A DPAK/TO-220
STripFETTM II POWER MOSFET
s
TYPICAL R
DS
(on) = 0.005
s
LOW THRESHOLD DRIVE
s
LOGIC LEVEL DEVICE
s
SURFACE-MOUNTING D
2
PAK (TO-263)
POWER PACKAGE IN TUBE (NO SUFFIX) OR
IN TAPE & REEL (SUFFIX "T4")
DESCRIPTION
This Power MOSFET is the latest development of
STMicroelectronis unique "Single Feature SizeTM"
strip-based process. The resulting transistor
shows extremely high packing density for low on-
resistance, rugged avalanche characteristics and
less critical alignment steps therefore a remark-
able manufacturing reproducibility.
APPLICATIONS
s
HIGH CURRENT, HIGH SPEED SWITCHING
s
SOLENOID AND RELAY DRIVERS
s
MOTOR CONTROL, AUDIO AMPLIFIERS
s
DC-DC & DC-AC CONVERTERS
s
AUTOMOTIVE
TYPE
V
DSS
R
DS(on)
I
D
STB80NF55L-06
STP80NF55L-06
55 V
55 V
< 0.0065
< 0.0065
80 A
80 A
1
2
3
1
3
TO-220
D
2
PAK
TO-263
(Suffix "T4")
ABSOLUTE MAXIMUM RATINGS
(#
)
Current limited by the package
(
)
Pulse width limited safe operating area
(1) I
SD
80A, di/dt
400A/s, V
DD
V
(BR)DSS
, T
j
T
JMAX
(2) Starting T
j
= 25
o
C, I
D
= 40A, V
DD
= 35V
Symbol
Parameter
Value
Unit
V
DS
Drain-source Voltage (V
GS
= 0)
55
V
V
DGR
Drain-gate Voltage (R
GS
= 20 k
)
55
V
V
GS
Gate- source Voltage
16
V
I
D
(#)
Drain Current (continuous) at T
C
= 25C
80
A
I
D
Drain Current (continuous) at T
C
= 100C
80
A
I
DM
(
)
Drain Current (pulsed)
320
A
P
tot
Total Dissipation at T
C
= 25C
300
W
Derating Factor
2
W/C
dv/dt
(1)
Peak Diode Recovery voltage slope
7
V/ns
E
AS (2)
Single Pulse Avalanche Energy
1.3
J
T
stg
Storage Temperature
-55 to 175
C
T
j
Operating Junction Temperature
INTERNAL SCHEMATIC DIAGRAM
STB80NF55L-06 STP80NF55L-06
2/10
THERMAL DATA
ELECTRICAL CHARACTERISTICS (T
CASE
= 25 C UNLESS OTHERWISE SPECIFIED)
OFF
ON
(*)
DYNAMIC
Rthj-case
Rthj-amb
T
l
Thermal Resistance Junction-case
Thermal Resistance Junction-ambient
Maximum Lead Temperature For Soldering Purpose
Max
Max
0.5
62.5
300
C/W
C/W
C
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
V
(BR)DSS
Drain-source
Breakdown Voltage
I
D
= 250 A, V
GS
= 0
55
V
I
DSS
Zero Gate Voltage
Drain Current (V
GS
= 0)
V
DS
= Max Rating
V
DS
= Max Rating T
C
= 125C
1
10
A
A
I
GSS
Gate-body Leakage
Current (V
DS
= 0)
V
GS
= 16 V
100
nA
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
V
GS(th)
Gate Threshold Voltage
V
DS
= V
GS
I
D
= 250 A
1
V
R
DS(on)
Static Drain-source On
Resistance
V
GS
= 10 V
I
D
= 40 A
V
GS
= 5 V
I
D
= 40 A
0.005
0.0055
0.0065
0.008
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
g
fs (*)
Forward Transconductance
V
DS
= 15 V
I
D
= 40 A
150
S
C
iss
C
oss
C
rss
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
V
DS
= 25V f = 1 MHz V
GS
= 0
4850
1040
375
pF
pF
pF
3/10
STB80NF55L-06 STP80NF55L-06
SWITCHING ON
SWITCHING OFF
SOURCE DRAIN DIODE
(*)
Pulsed: Pulse duration = 300 s, duty cycle 1.5 %.
(
)
Pulse width limited by safe operating area.
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
t
d(on)
t
r
Turn-on Delay Time
Rise Time
V
DD
= 27 V
I
D
= 40 A
R
G
= 4.7
V
GS
= 4.5 V
(Resistive Load, Figure 3)
32
180
ns
ns
Q
g
Q
gs
Q
gd
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
V
DD
= 44V I
D
= 80A V
GS
= 5V
100
18
53
136
nC
nC
nC
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
t
d(off)
t
f
Turn-off Delay Time
Fall Time
V
DD
= 27 V
I
D
= 40 A
R
G
= 4.7
,
V
GS
= 4.5 V
(Resistive Load, Figure 3)
135
80
ns
ns
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
I
SD
I
SDM
(
)
Source-drain Current
Source-drain Current (pulsed)
80
320
A
A
V
SD
(*)
Forward On Voltage
I
SD
= 80 A V
GS
= 0
1.5
V
t
rr
Q
rr
I
RRM
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
I
SD
= 80 A
di/dt = 100A/s
V
DD
= 25 V
T
j
= 150C
(see test circuit, Figure 5)
100
310
6.2
ns
nC
A
ELECTRICAL CHARACTERISTICS (continued)
Safe Operating Area
Thermal Impedance
STB80NF55L-06 STP80NF55L-06
4/10
Output Characteristics
Transfer Characteristics
Transconductance
Static Drain-source On Resistance
Gate Charge vs Gate-source Voltage
Capacitance Variations
5/10
STB80NF55L-06 STP80NF55L-06
.
.
Normalized Gate Threshold Voltage vs Temperature
Normalized on Resistance vs Temperature
Source-drain Diode Forward Characteristics
Normalized Breakdown Voltage vs Temperature.
.
.
STB80NF55L-06 STP80NF55L-06
6/10
Fig. 1: Unclamped Inductive Load Test Circuit
Fig. 1: Unclamped Inductive Load Test Circuit
Fig. 2: Unclamped Inductive Waveform
Fig. 3: Switching Times Test Circuits For Resistive
Load
Fig. 4: Gate Charge test Circuit
Fig. 5: Test Circuit For Inductive Load Switching
And Diode Recovery Times
7/10
STB80NF55L-06 STP80NF55L-06
DIM.
mm.
inch.
MIN.
TYP. MAX.
MIN.
TYP. TYP.
A
4.4
4.6
0.173
0.181
A1
2.49
2.69
0.098
0.106
A2
0.03
0.23
0.001
0.009
B
0.7
0.93
0.028
0.037
B2
1.14
1.7
0.045
0.067
C
0.45
0.6
0.018
0.024
C2
1.21
1.36
0.048
0.054
D
8.95
9.35
0.352
0.368
D1
8
0.315
E
10
10.4
0.394
0.409
E1
8.5
0.334
G
4.88
5.28
0.192
0.208
L
15
15.85
0.591
0.624
L2
1.27
1.4
0.050
0.055
L3
1.4
1.75
0.055
0.069
M
2.4
3.2
0.094
0.126
R
0.4
0.015
V2
0
8
0
8
D
2
PAK MECHANICAL DATA
STB80NF55L-06 STP80NF55L-06
8/10
DIM.
mm.
inch.
MIN.
TYP. MAX.
MIN.
TYP. TYP.
A
4.4
4.6
0.173
0.181
C
1.23
1.32
0.048
0.051
D
2.40
2.72
0.094
0.107
E
0.49
0.70
0.019
0.027
F
0.61
0.88
0.024
0.034
F1
1.14
1.70
0.044
0.067
F2
1.14
1.70
0.044
0.067
G
4.95
5.15
0.194
0.203
G1
2.40
2.70
0.094
0.106
H2
10
10.40
0.393
0.409
L2
16.40
0.645
L3
28.90
1.137
L4
13
14
0.511
0.551
L5
2.65
2.95
0.104
0.116
L6
15.25
15.75
0.600
0.620
L7
6.20
6.60
0.244
0.260
L9
3.50
3.93
0.137
0.154
DIA
3.75
3.85
0.147
0.151
TO-220 MECHANICAL DATA
9/10
STB80NF55L-06 STP80NF55L-06
DIM.
mm
inch
MIN.
MAX.
MIN.
MAX.
A0
10.5
10.7
0.413
0.421
B0
15.7
15.9
0.618
0.626
D
1.5
1.6
0.059
0.063
D1
1.59
1.61
0.062
0.063
E
1.65
1.85
0.065
0.073
F
11.4
11.6
0.449
0.456
K0
4.8
5.0
0.189
0.197
P0
3.9
4.1
0.153
0.161
P1
11.9
12.1
0.468
0.476
P2
1.9
2.1
0075
0.082
R
50
1.574
T
0.25
0.35
.0.0098
0.0137
W
23.7
24.3
0.933
0.956
DIM.
mm
inch
MIN.
MAX.
MIN.
MAX.
A
330
12.992
B
1.5
0.059
C
12.8
13.2
0.504
0.520
D
20.2
0.795
G
24.4
26.4
0.960
1.039
N
100
3.937
T
30.4
1.197
BASE QTY
BULK QTY
1000
1000
REEL MECHANICAL DATA
* on sales type
TUBE SHIPMENT (no suffix)*
TAPE AND REEL SHIPMENT (suffix "T4")*
D
2
PAK FOOTPRINT
TAPE MECHANICAL DATA
STB80NF55L-06 STP80NF55L-06
10/10
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences
of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted
by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject
to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not
authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.
The ST logo is registered trademark of STMicroelectronics
2002 STMicroelectronics - All Rights Reserved
All other names are the property of their respective owners.
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