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PRELIMINARY DATA
April 2003
STP80NF55L-08
STB80NF55L-08
N-CHANNEL 55V - 0.0065
- 80A - TO-220/D
2
PAK
STripFETTM II POWER MOSFET
(1) Current Limited by Package
(2) I
SD
80A, di/dt
500A/s, V
DD
=40V T
j
T
JMAX.
(3) Starting T
j
=25C, I
D
=40A, V
DD
=40V
s
TYPICAL R
DS
(on) = 0.0065
s
LOW THRESHOLD DRIVE
s
LOGIC LEVEL DEVICE
DESCRIPTION
This Power Mosfet is the latest development of
STMicroelectronics
unique
"Single
Feature
Size
TM"
strip-based process. The resulting tran-
sistor shows extremely high packing density for
low on-resistance, rugged avalance characteris-
tics and less critical alignment steps therefore a re-
markable manufacturing reproducibility.
APPLICATIONS
s
SOLENOID AND RELAY DRIVERS
s
MOTOR CONTROL, AUDIO AMPLIFIERS
s
DC-DC CONVERTERS
s
AUTOMOTIVE ENVIRONMENT
ABSOLUTE MAXIMUM RATINGS
(
q
) Pulse width limited by safe operating area
TYPE
V
DSS
R
DS(on)
I
D
STP80NF55L-08
STB80NF55L-08
55 V
55 V
0.008
0.008
80 A
80 A
Symbol
Parameter
Value
Unit
V
DS
Drain-source Voltage (V
GS
= 0)
55
V
V
DGR
Drain-gate Voltage (R
GS
= 20 k
)
55
V
V
GS
Gate- source Voltage
16
V
I
D
(1)
Drain Current (continuos) at T
C
= 25C
80
A
I
D
(1)
Drain Current (continuos) at T
C
= 100C
80
A
I
DM
( )
Drain Current (pulsed)
320
A
P
TOT
Total Dissipation at T
C
= 25C
300
W
Derating Factor
2
W/C
dv/dt (2)
Peak Diode Recovery voltage slope
15
V/ns
E
AS
(3)
Single Pulse Avalanche Energy
870
mJ
T
stg
Storage Temperature
55 to 175
C
T
j
Max. Operating Junction Temperature
175
C
TO-220
1
2
3
1
3
D
2
PAK
INTERNAL SCHEMATIC DIAGRAM
STP80NF55L-08
2/8
THERMAL DATA
ELECTRICAL CHARACTERISTICS (TCASE = 25 C UNLESS OTHERWISE SPECIFIED)
OFF
ON (1)
DYNAMIC
Rthj-case
Thermal Resistance Junction-case Max
0.5
C/W
Rthj-amb
Thermal Resistance Junction-ambient Max
62.5
C/W
T
l
Maximum Lead Temperature For Soldering Purpose
300
C
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
V
(BR)DSS
Drain-source
Breakdown Voltage
I
D
= 250 A, V
GS
= 0
55
V
I
DSS
Zero Gate Voltage
Drain Current (V
GS
= 0)
V
DS
= Max Rating
1
A
V
DS
= Max Rating, T
C
= 125 C
10
A
I
GSS
Gate-body Leakage
Current (V
DS
= 0)
V
GS
= 16V
100
nA
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
V
GS(th)
Gate Threshold Voltage
V
DS
= V
GS
, I
D
= 250A
1
1.6
2.5
V
R
DS(on)
Static Drain-source On
Resistance
V
GS
= 10 V, I
D
= 40 A
V
GS
= 5 V, I
D
= 40 A
0.0065
0.008
0.008
0.01
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
g
fs
Forward Transconductance
V
DS
=15V
,
I
D
=40 A
150
S
C
iss
Input Capacitance
V
DS
= 25V, f = 1 MHz, V
GS
= 0
4350
pF
C
oss
Output Capacitance
800
pF
C
rss
Reverse Transfer
Capacitance
260
pF
3/8
STP80NF55L-08
ELECTRICAL CHARACTERISTICS (CONTINUED)
SWITCHING ON
SWITCHING OFF
SOURCE DRAIN DIODE
Note: 1. Pulsed: Pulse duration = 300 s, duty cycle 1.5 %.
2. Pulse width limited by safe operating area.
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
t
d(on)
Turn-on Delay Time
V
DD
= 27V, I
D
= 40A
R
G
= 4.7
V
GS
= 4.5V
(see test circuit, Figure 3)
35
ns
t
r
Rise Time
145
ns
Q
g
Q
gs
Q
gd
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
V
DD
= 27.5 V, I
D
= 80A,
V
GS
= 4.5V
75
20
30
100
nC
nC
nC
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
t
d(off)
t
f
Turn-off-Delay Time
Fall Time
V
DD
= 27V, I
D
= 40A,
R
G
= 4.7
,
V
GS
= 4.5V
(see test circuit, Figure 3)
85
65
ns
ns
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
I
SD
Source-drain Current
80
A
I
SDM
(2)
Source-drain Current (pulsed)
320
A
V
SD
(2)
Forward On Voltage
I
SD
= 80A, V
GS
= 0
1.5
V
t
rr
Q
rr
I
RRM
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
I
SD
= 80A, di/dt = 100A/s,
V
DD
= 20V, T
j
= 150C
(see test circuit, Figure 5)
85
280
6.5
ns
nC
A
STP80NF55L-08
4/8
Fig. 5: Test Circuit For Inductive Load Switching
And Diode Recovery Times
Fig. 4: Gate Charge test Circuit
Fig. 2: Unclamped Inductive Waveform
Fig. 1: Unclamped Inductive Load Test Circuit
Fig. 3: Switching Times Test Circuit For
Resistive Load
5/8
STP80NF55L-08
DIM.
mm.
inch
MIN.
TYP
MAX.
MIN.
TYP.
MAX.
A
4.40
4.60
0.173
0.181
b
0.61
0.88
0.024
0.034
b1
1.15
1.70
0.045
0.066
c
0.49
0.70
0.019
0.027
D
15.25
15.75
0.60
0.620
E
10
10.40
0.393
0.409
e
2.40
2.70
0.094
0.106
e1
4.95
5.15
0.194
0.202
F
1.23
1.32
0.048
0.052
H1
6.20
6.60
0.244
0.256
J1
2.40
2.72
0.094
0.107
L
13
14
0.511
0.551
L1
3.50
3.93
0.137
0.154
L20
16.40
0.645
L30
28.90
1.137
P
3.75
3.85
0.147
0.151
Q
2.65
2.95
0.104
0.116
TO-220 MECHANICAL DATA
STP80NF55L-08
6/8
1
DIM.
mm.
inch
MIN.
TYP
MAX.
MIN.
TYP.
MAX.
A
4.4
4.6
0.173
0.181
A1
2.49
2.69
0.098
0.106
A2
0.03
0.23
0.001
0.009
B
0.7
0.93
0.027
0.036
B2
1.14
1.7
0.044
0.067
C
0.45
0.6
0.017
0.023
C2
1.23
1.36
0.048
0.053
D
8.95
9.35
0.352
0.368
D1
8
0.315
E
10
10.4
0.393
E1
8.5
0.334
G
4.88
5.28
0.192
0.208
L
15
15.85
0.590
0.625
L2
1.27
1.4
0.050
0.055
L3
1.4
1.75
0.055
0.068
M
2.4
3.2
0.094
0.126
R
0.4
0.015
V2
0
4
D
2
PAK MECHANICAL DATA
3
7/8
STP80NF55L-08
TAPE AND REEL SHIPMENT (suffix "T4")*
TUBE SHIPMENT (no suffix)*
D
2
PAK FOOTPRINT
* on sales type
DIM.
mm
inch
MIN.
MAX.
MIN.
MAX.
A
330
12.992
B
1.5
0.059
C
12.8
13.2
0.504
0.520
D
20.2
0795
G
24.4
26.4
0.960
1.039
N
100
3.937
T
30.4
1.197
BASE QTY
BULK QTY
1000
1000
REEL MECHANICAL DATA
DIM.
mm
inch
MIN.
MAX.
MIN.
MAX.
A0
10.5
10.7
0.413
0.421
B0
15.7
15.9
0.618
0.626
D
1.5
1.6
0.059
0.063
D1
1.59
1.61
0.062
0.063
E
1.65
1.85
0.065
0.073
F
11.4
11.6
0.449
0.456
K0
4.8
5.0
0.189
0.197
P0
3.9
4.1
0.153
0.161
P1
11.9
12.1
0.468
0.476
P2
1.9
2.1
0.075
0.082
R
50
1.574
T
0.25
0.35
0.0098 0.0137
W
23.7
24.3
0.933
0.956
TAPE MECHANICAL DATA
STP80NF55L-08
8/8
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the
consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from
its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications
mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information
previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or
systems without express written approval of STMicroelectronics.
The ST logo is a registered trademark of STMicroelectronics
2003 STMicroelectronics - Printed in Italy - All Rights Reserved
STMicroelectronics GROUP OF COMPANIES
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