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STPS1045D/F/FP
July 2003 - Ed: 5D
POWER SCHOTTKY RECTIFIER
I
F(AV)
10 A
V
RRM
45 V
V
F
0.57 V
MAIN PRODUCT CHARACTERISTICS
s
VERY SMALL CONDUCTION LOSSES
s
NEGLIGIBLE SWITCHING LOSSES
s
EXTREMELY FAST SWITCHING
s
LOW FORWARD VOLTAGE DROP
s
INSULATED
PACKAGE:
ISOWATT220AC,
TO-220FPAC
Insulating voltage = 2000V DC
Capacitance = 12pF
s
AVALANCHE CAPABILITY SPECIFIED
FEATURES AND BENEFITS
Single chip Schottky rectifier suited for Switch
Mode Power Supply and high frequency DC to DC
converters.
This device is intended for use in low voltage, high
frequency inverters, free wheeling and polarity
protection applications.
DESCRIPTION
Symbol
Parameter
Value
Unit
V
RRM
Repetitive peak reverse voltage
45
V
I
F(RMS)
RMS forward current
30
A
I
F(AV)
Average forward current
= 0.5
TO-220AC
Tc = 150C
10
A
ISOWATT220AC
TO-220FPAC
Tc = 145C
I
FSM
Surge non repetitive forward current
tp = 10 ms
Sinusoidal
180
A
I
RRM
Repetitive peak reverse current
tp = 2 s
F = 1KHz
1
A
P
ARM
Repetitive peak avalanche power
tp = 1s
Tj = 25C
4000
W
T
stg
Storage temperature range
- 65 to + 175
C
Tj
Maximum junction temperature
175
C
dV/dt
Critical rate of rise of reverse voltage
10000
V/s
ABSOLUTE RATINGS (limiting values)
ISOWATT220AC
STPS1045F
A
K
A
K
TO-220AC
STPS1045D
A
K
K
A
TO-220FPAC
STPS1045FP
STPS1045D/F/FP
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Symbol
Parameter
Value
Unit
R
th (j-c)
Junction to case
TO-220AC
2.2
C/W
ISOWATT220AC
TO-220FPAC
4.5
THERMAL RESISTANCES
Symbol
Parameter
Tests Conditions
Min.
Typ.
Max.
Unit
I
R
*
Reverse leakage current
Tj = 25C
V
R
= V
RRM
100
A
Tj = 125C
15
mA
V
F
**
Forward voltage drop
Tj = 25C
I
F
= 20 A
0.84
V
Tj = 125C
I
F
= 20 A
0.72
Tj = 125
C
I
F
= 10 A
0.60
STATIC ELECTRICAL CHARACTERISTICS
Pulse test :
* tp = 5 ms,
< 2 %
** tp = 380 s,
< 2%
To evaluate the conduction losses use the following equation :
P = 0.42 x I
F(AV)
+ 0.015 I
F
2
(RMS)
0
1
2
3
4
5
6
7
8
9
10
11
12
0
1
2
3
4
5
6
7
8
IF(av) (A)
PF(av)(W)
= 0.05
= 0.1
= 0.2
= 0.5
= 1
T
=tp/T
tp
Fig. 1: Average forward power dissipation versus
average forward current.
0
25
50
75
100
125
150
175
0
2
4
6
8
10
12
Tamb(C)
IF(av)(A)
Rth(j-a)=15C/W
Rth(j-a)=Rth(j-c)
TO220AC
ISOWATT220
T
=tp/T
tp
Fig. 2: Average current versus ambient tempera-
ture (
: 0.5).
STPS1045D/F/FP
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1E-3
1E-2
1E-1
1E+0
0
20
40
60
80
100
120
140
160
t(s)
IM(A)
Tc=50C
Tc=100C
Tc=150C
I
M
t
=0.5
Fig. 5-1: Non repetitive surge peak forward cur-
rent versus overload duration (maximum values)
(TO-220AC).
1E-4
1E-3
1E-2
1E-1
1E+0
0.0
0.2
0.4
0.6
0.8
1.0
tp(s)
Zth(j-c)/Rth(j-c)
T
=tp/T
tp
= 0.5
= 0.2
= 0.1
Single pulse
Fig. 6-1: Relative variation of thermal transient im-
pedance junction to case versus pulse duration
(TO-220AC).
1E-3
1E-2
1E-1
1E+0
0
10
20
30
40
50
60
70
80
90
100
t(s)
IM(A)
Tc=50C
Tc=100C
Tc=150C
I
M
t
=0.5
Fig. 5-2: Non repetitive surge peak forward cur-
rent versus overload duration (maximum values)
(ISOWATT220AC, TO-220FPAC).
1E-3
1E-2
1E-1
1E+0
1E+1
0.0
0.2
0.4
0.6
0.8
1.0
tp(s)
Zth(j-c)/Rth(j-c)
= 0.5
= 0.2
= 0.1
Single pulse
T
=tp/T
tp
Fig. 6-2: Relative variation of thermal transient im-
pedance junction to case versus pulse duration
(ISOWATT220AC, TO-220FPAC).
0
0.2
0.4
0.6
0.8
1
1.2
0
25
50
75
100
125
150
T (C)
j
P
(t )
P
(25C)
ARM p
ARM
Fig. 4: Normalized avalanche power derating
versus junction temperature.
0.001
0.01
0.1
0.01
1
0.1
10
100
1000
1
t (s)
p
P
(t )
P
(1s)
ARM p
ARM
Fig. 3: Normalized avalanche power derating
versus pulse duration.
STPS1045D/F/FP
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0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
0.1
1.0
10.0
100.0
VFM(V)
IFM(A)
Tj=125C
Tj=25C
Tj=125C
(Typical values)
Fig. 9: Forward voltage drop versus forward
current (maximum values).
0
5
10
15
20
25
30
35
40
45
1E-1
1E+0
1E+1
1E+2
1E+3
1E+4
1E+5
VR(V)
IR(A)
Tj=150C
Tj=100C
Tj=125C
Tj=25C
Tj=50C
Tj=75C
Fig. 7: Reverse leakage current versus reverse
voltage applied (typical values).
1
2
5
10
20
50
100
200
500
1000
VR(V)
C(pF)
F=1MHz
Tj=25C
Fig. 8: Junction capacitance versus reverse
voltage applied (typical values).
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