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STPS120L15TV
July 2003 - Ed :54A
LOW DROP OR-ing POWER SCHOTTKY DIODE
I
F(AV)
2 x 60 A
V
RRM
15 V
Tj (max)
125 C
V
F
(max)
0.31 V
MAIN PRODUCT CHARACTERISTICS
n
VERY LOW DROP FORWARD VOLTAGE FOR
LESS POWER DISSIPATION AND REDUCED
HEATSINK
n
INSULATED PACKAGE:
Insulated voltage = 2500 V
(RMS)
Capacitance = 45 pF
n
AVALANCHE CAPABILITY SPECIFIED
FEATURES AND BENEFITS
Dual Schottky rectifier suited for Switched Mode
Power Supplies and DC to DC power converters.
Packaged in ISOTOP
TM
, this device is especially
intended for use as an OR-ing diode in fault
tolerant power supply equipments.
DESCRIPTION
ISOTOP
TM
K2
A2
A1
K1
Symbol
Parameter
Value
Unit
V
RRM
Repetitive peak reverse voltage
15
V
I
F(RMS)
RMS forward current
160
A
I
F(AV)
Average forward current
Tc = 115C
= 1
60
A
I
FSM
Surge non repetitive forward current
tp = 10 ms
Sinusoidal
1200
A
I
RRM
Repetitive peak reverse current
tp = 2s
F = 1kHz
2
A
P
ARM
Repetitive peak avalanche power
tp = 1s
Tj = 25C
72030
W
T
stg
Storage temperature range
- 65 to + 150
C
Tj
Maximum operating junction temperature
125
C
dV/dt
Critical rate of rise of reverse voltage
10000
V/s
ABSOLUTE RATINGS (limiting values, per diode)
ISOTOP is a trademark of STMicroelectronics
K2
A2
A1
K1
* :
dPtot
dTj
Rth j
a
<
-
1
(
)
thermal runaway condition for a diode on its own heatsink
STPS120L15TV
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Symbol
Parameter
Value
Unit
R
th (j-c)
Junction to case
Per diode
0.45
C/W
Total
0.28
R
th (c)
Coupling
0.1
THERMAL RESISTANCES
Symbol
Parameter
Tests conditions
Min.
Typ.
Max.
Unit
I
R
*
Reverse leakage current
Tj = 100
C
V
R
= 5V
450
mA
Tj = 25
C
V
R
= 12V
22
mA
Tj = 100C
0.7
2.2
A
V
F
*
Forward voltage drop
Tj = 25
C
I
F
= 60 A
0.43
V
Tj = 125
C
I
F
= 60 A
0.27
0.31
STATIC ELECTRICAL CHARACTERISTICS (per diode)
Pulse test :
* tp = 380 s,
< 2%
To evaluate the conduction losses use the following equation :
P = 0.18 x I
F(AV)
+ 2.2 10
-3
x I
F
2
(RMS)
0
10
20
30
40
50
60
70
0
2
4
6
8
10
12
14
16
18
20
PF(av)(W)
T
=tp/T
tp
= 0.2
= 0.5
= 1
= 0.05
= 0.1
IF(av)(A)
Fig. 1: Average forward power dissipation versus
average forward current (per diode).
0
25
50
75
100
125
0
10
20
30
40
50
60
70
IF(av)(A)
Rth(j-a)=Rth(j-c)
Rth(j-a)=2.5C/W
Tamb(C)
T
=tp/T
tp
Fig. 2: Average forward current versus ambient
temperature (
=1) (per diode).
0
0.2
0.4
0.6
0.8
1
1.2
0
25
50
75
100
125
150
T (C)
j
P
(t )
P
(25C)
ARM p
ARM
Fig. 4: Normalized avalanche power derating
versus junction temperature.
0.001
0.01
0.1
0.01
1
0.1
10
100
1000
1
t (s)
p
P
(t )
P
(1s)
ARM p
ARM
Fig. 3: Normalized avalanche power derating
versus pulse duration.
STPS120L15TV
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1E-3
1E-2
1E-1
1E+0
0
100
200
300
400
500
600
700
800
900
1000
IM(A)
Tc=50C
Tc=75C
Tc=110C
t(s)
I
M
t
=0.5
Fig. 5: Non repetitive surge peak forward current
versus overload duration (maximum values per
diode).
0.0
2.5
5.0
7.5
10.0
12.5
15.0
1E+0
1E+1
1E+2
1E+3
5E+3
IR(mA)
Tj=100C
Tj=70C
Tj=25C
VR(V)
Fig. 7: Reverse leakage current versus reverse
voltage applied (typical values per diode).
1E-3
1E-2
1E-1
1E+0
1E+1
0.1
0.2
0.5
1.0
Zth(j-c)/Rth(j-c)
=0.1
=0.2
=0.5
Single pulse
tp(s)
T
=tp/T
tp
Fig. 6: Relative variation of thermal impedance
junction to case versus pulse duration.
1
2
5
10
20
1
2
5
10
20
C(nF)
F=1MHz
Tj=25C
VR(V)
Fig. 8: Junction capacitance versus reverse
voltage applied (typical values per diode).
0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0
1
10
100
500
IFM(A)
Tj=100C
VFM(V)
Fig. 9: Forward voltage drop versus forward
current (maximum values per diode).
STPS120L15TV
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Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of
use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by
implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to
change without notice. This publication supersedes and replaces all information previously supplied.
STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written
approval of STMicroelectronics.
The ST logo is a registered trademark of STMicroelectronics
2003 STMicroelectronics - Printed in Italy - All rights reserved.
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PACKAGE MECHANICAL DATA
ISOTOP
REF.
DIMENSIONS
Millimeters
Inches
Min.
Max.
Min.
Max.
A
11.80
12.20
0.465
0.480
A1
8.90
9.10
0.350
0.358
B
7.8
8.20
0.307
0.323
C
0.75
0.85
0.030
0.033
C2
1.95
2.05
0.077
0.081
D
37.80
38.20
1.488
1.504
D1
31.50
31.70
1.240
1.248
E
25.15
25.50
0.990
1.004
E1
23.85
24.15
0.939
0.951
E2
24.80 typ.
0.976 typ.
G
14.90
15.10
0.587
0.594
G1
12.60
12.80
0.496
0.504
G2
3.50
4.30
0.138
0.169
F
4.10
4.30
0.161
0.169
F1
4.60
5.00
0.181
0.197
P
4.00
4.30
0.157
0.69
P1
4.00
4.40
0.157
0.173
S
30.10
30.30
1.185
1.193
Ordering type
Marking
Package
Weight
Base qty
Delivery
mode
STPS120L15TV
STPS120L15TV
ISOTOP
28g
(without screws)
10
Tube
n
Cooling method: by conduction (C)
n
Recommended torque value : 1.3 N.m.
n
Maximum torque value: 1.5 N.m.
n
Epoxy meets UL94,V0
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