July 2006
Rev 1
1/10
STPS16170C
High voltage power Schottky rectifier
Main product characteristics
Features and benefits
High junction temperature capability
Good trade-off between leakage current and
forward voltage drop
Low leakage current
Avalanche capability specified
Description
Dual centre tab Schottky rectifier designed for
high frequency switch mode power supplies.
Order codes
I
F(AV)
2 x 8 A
V
RRM
170 V
T
j
175 C
V
F
(typ)
0.70 V
Part Number
Marking
STPS16170CT
STPS16170CT
STPS16170CG
STPS16170CG
STPS16170CG-TR
STPS16170CG
STPS16170CR
STPS16170CR
STPS16170CB-TR
PS16170CB
STPS16170CB
PS16170CB
A1
A2
K
K
A1
A2
K
A1
A2
K
A1
A2
K
A1
A2
D
2
PAK
STPS16170CG
TO-220AB
STPS16170CT
I
2
PAK
STPS16170CR
DPAK
STPS16170CB
www.st.com
Characteristics
STPS16170C
2/10
1 Characteristics
To evaluate the conduction losses use the following equation:
P = 0.64 x I
F(AV)
+ 0.014 x I
F
2
(RMS)
Table 1.
Absolute ratings (limiting values per diode, T
amb
= 25 C unless otherwise specified)
Symbol
Parameter
Value
Unit
V
RRM
Repetitive peak reverse voltage
170
V
I
F(RMS)
RMS forward current
20
A
I
F(AV)
Average forward current,
= 0.5
T
c
= 150 C
Per diode
8
A
Total package
16
I
FSM
Surge non repetitive forward current
t
p
= 10 ms Sinusoidal
75
A
P
ARM
Releative peak avalanche power
T
j
= 25 C
t
p
= 1s
4700
W
T
stg
Storage temperature range
-65 to + 175
C
T
j
Maximum operating junction temperature
(1)
175
C
dV/dt
Critical rate of rise of reverse voltage
10 000
V/s
1.
thermal runaway condition for a diode on its own heatsink
dP
tot
dT
j
---------------
1
R
th j
a
(
)
--------------------------
<
Table 2.
Thermal parameters
Symbol
Parameter
Value
Unit
R
th(j-c)
Junction to case
Per diode
3
C/W
Total
1.8
R
th(c)
Coupling
0.6
Table 3.
Static electrical characteristics
Symbol
Parameter
Test conditions
Min.
Typ
Max.
Unit
I
R
(1)
Reverse leakage current
T
j
= 25 C
V
R
= V
RRM
15
A
T
j
= 125 C
15
mA
V
F
(2)
Forward voltage drop
T
j
= 25 C
I
F
= 8 A
0.92
V
T
j
= 125 C
0.70
0.75
T
j
= 25 C
I
F
= 16 A
1
T
j
= 125 C
0.8
0.86
1.
Pulse test: t
p
= 5 ms,
< 2 %
2.
Pulse test: t
p
= 380 s,
< 2 %
STPS16170C
Characteristics
3/10
Figure 1.
Conduction losses versus average
forward current (per diode)
Figure 2.
Average forward current versus
ambient temperature (
= 0.5, per
diode)
0
1
2
3
4
5
6
7
8
0
1
2
3
4
5
6
7
8
9
10
P
F(AV)
(W)
=0.05
=0.1
=0.2
=0.5
=1
T
=tp/T
tp
I
F(AV)
(A)
0
25
50
75
100
125
150
175
0
1
2
3
4
5
6
7
8
9
Tamb(C)
I
(A)
F(av)
Rth(j-a)=Rth(j-c)
Rth(j-a)=15C/W
T
=tp/T
tp
Figure 3.
Normalized avalanche power
derating versus pulse duration
Figure 4.
Normalized avalanche power
derating versus junction
temperature
0.001
0.01
0.1
0.01
1
0.1
10
100
1000
1
t (s)
p
P
(t )
P
(1s)
ARM p
ARM
0
0.2
0.4
0.6
0.8
1
1.2
25
50
75
100
125
150
T (C)
j
P
(t )
P
(25C)
ARM p
ARM
Figure 5.
Non repetitive surge peak forward
current versus overload duration
(maximum values, per diode)
Figure 6.
Relative variation of thermal
impedance junction to case versus
pulse duration
0
20
40
60
80
100
120
1.E-03
1.E-02
1.E-01
1.E+00
I
M
(A)
T
C
=50C
T
C
=75C
T
C
=125C
IM
t
=0.5
t(s)
0.1
1.0
1.E-03
1.E-02
1.E-01
1.E+00
Z
th(j-c)
/R
th(j-c)
Single pulse
TO-220AB
DPAK
IPAK
DPAK
tp(s)
Characteristics
STPS16170C
4/10
Figure 7.
Reverse leakage current versus
reverse voltage applied (typical
values, per diode)
Figure 8.
Junction capacitance versus
reverse voltage applied (typical
values, per diode)
Figure 9.
Forward voltage drop versus
forward current (per diode)
Figure 10.
Thermal resistance junction to
ambient versus copper surface
under tab (epoxy printed board
FR4, Cu = 35 m - DPAK)
Figure 11.
Thermal resistance junction to
ambient versus copper surface
under tab (epoxy printed board
FR4, Cu = 35 m - D
2
PAK)
1.E-01
1.E+00
1.E+01
1.E+02
1.E+03
1.E+04
1.E+05
0
25
50
75
100
125
150
175
I
R
(A)
T
j
=150C
T
j
=125C
T
j
=25C
T
j
=75C
T
j
=175C
V
R
(V)
10
100
1000
1
10
100
1000
C(pF)
F=1MHz
V
OSC
=30mV
RMS
T
j
=25C
V
R
(V)
0.0
10.0
20.0
30.0
40.0
50.0
60.0
70.0
80.0
90.0
100.0
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
I
FM
(A)
Tj=25C
(Maximum values)
Tj=125C
(Maximum values)
Tj=125C
(Maximum values)
Tj=125C
(Typical values)
Tj=125C
(Typical values)
V
FM
(V)
0
10
20
30
40
50
60
70
80
90
100
0
5
10
15
20
25
30
35
40
R
th(j-a)
(C/W)
DPAK
S
CU
(cm)
0
10
20
30
40
50
60
70
80
0
5
10
15
20
25
30
35
40
R
th(j-a)
(C/W)
DPAK
S
CU
(cm)
PDF 
ZIP