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STPS16H100CT/CG/CFP/CR
July 2003 - Ed: 2A
HIGH VOLTAGE POWER SCHOTTKY RECTIFIER
I
F(AV)
2 x 8 A
V
RRM
100 V
Tj (max)
175 C
V
F
(max)
0.64 V
MAIN PRODUCT CHARACTERISTICS
s
NEGLIGIBLE SWITCHING LOSSES
s
HIGH JUNCTION TEMPERATURE CAPABILITY
s
LOW LEAKAGE CURRENT
s
GOOD TRADE OFF BETWEEN LEAKAGE
CURRENT AND FORWARD VOLTAGE DROP
s
AVALANCHE CAPABILITY SPECIFIED
FEATURES AND BENEFITS
Dual center tap Schottky rectifier designed for
high frequency miniature Switch Mode Power
Supplies such as adaptators and on board
DC/DC converters.
DESCRIPTION
TO-220AB
STPS16H100CT
A1
A2
K
Symbol
Parameter
Value
Unit
V
RRM
Repetitive peak reverse voltage
100
V
I
F(RMS)
RMS forward current
30
A
I
F(AV)
Average forward
current
= 0.5
TO-220AB
D
2
PAK / I
2
PAK
Tc = 165C
Per diode
8
A
TO-220FPAB
Tc = 150C
Per device
16
I
FSM
Surge non repetitive forward current
tp = 10 ms sinusoidal
200
A
I
RRM
Repetitive peak reverse current
tp = 2 s square F = 1kHz
1
A
I
RSM
Non repetitive peak reverse current
tp = 100 s square
2
A
P
ARM
Repetitive peak avalanche power
tp = 1s
Tj = 25C
8700
W
T
stg
Storage temperature range
- 65 to + 175
C
Tj
Maximum operating junction temperature *
175
C
dV/dt
Critical rate of rise of reverse voltage
10000
V/s
ABSOLUTE RATINGS (limiting values, per diode)
* :
dPtot
dTj
Rth j
a
<
-
1
(
)
thermal runaway condition for a diode on its own heatsink
A1
A2
K
D
2
PAK
STPS16H100CG
A1
A2
K
TO-220FPAB
STPS16H100CFP
A1
K
A2
I
2
PAK
STPS16H100CR
A1
A2
K
STPS16H100CT/CG/CFP/CR
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Symbol
Parameter
Value
Unit
R
th (j-c)
Junction to ambient
TO-220AB / D
2
PAK / I
2
PAK
Per diode
1.6
C/W
TO-220FPAB
4
TO-220AB / D
2
PAK / I
2
PAK
Total
1.1
C/W
TO-220FPAB
3.5
R
th (c)
TO-220AB / D
2
PAK / I
2
PAK
Coupling
0.6
C/W
TO-220FPAB
3
THERMAL RESISTANCES
Symbol
Parameter
Tests Conditions
Min.
Typ.
Max.
Unit
I
R
*
Reverse leakage Current
Tj = 25C
V
R
= V
RRM
3.6
A
Tj = 125C
1.6
5
mA
V
F
**
Forward Voltage drop
Tj = 25C
I
F
= 8 A
0.77
V
Tj = 125
C
I
F
= 8 A
0.59
0.64
Tj = 25C
I
F
= 16 A
0.88
Tj = 125C
I
F
= 16 A
0.67
0.73
STATIC ELECTRICAL CHARACTERISTICS (per diode)
Pulse test :
* tp = 5 ms,
< 2%
** tp = 380 s,
< 2%
To evaluate the conduction losses use the following equation :
P = 0.55 x I
F(AV)
+ 0.011 x I
F
2
(RMS)
0
1
2
3
4
5
6
7
0
1
2
3
4
5
6
7
8
9
10
I
(A)
F(AV)
= 0.05
= 0.1
= 0.2
= 0.5
= 1
P
(W)
F(AV)
T
=tp/T
tp
Fig. 1: Conduction losses versus average current.
0
1
2
3
4
5
6
7
8
9
0
25
50
75
100
125
150
175
T
(C)
amb
Rth
(j-a)
=Rth
(j-c)
Rth
(j-a)
=50C/W
TO-220AB/DPAK/IPAK
I
(A)
F(AV)
T
=tp/T
tp
Fig. 2: Average forward current versus ambient
temperature (
=0.5).
When the diodes 1 and 2 are used simultaneously :
Tj(diode 1) = P(diode1) x R
th(j-c)
(Per diode) + P(diode 2) x R
th(c)
STPS16H100CT/CG/CFP/CR
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0
20
40
60
80
100
120
140
160
180
200
1.E-03
1.E-02
1.E-01
1.E+00
t(s)
T
C
=25C
T
C
=75C
T
C
=125C
I (A)
M
I
M
t
=0.5
Fig. 5-1: Non repetitive surge peak forward current
versus
overload
duration
(maximum
values)
(TO-220AB, DPAK, IPAK).
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
1.E-03
1.E-02
1.E-01
1.E+00
t (s)
P
Zth(j-c) / Rth(j-c)
T
=tp/T
tp
= 0.5
= 0.2
= 0.1
Single pulse
Fig. 6-1: Relative variation of thermal impedance
junction to case versus pulse duration (TO-220AB,
DPAK & IPAK).
0
10
20
30
40
50
60
70
80
90
100
110
120
1.E-03
1.E-02
1.E-01
1.E+00
t(s)
T
C
=25C
T
C
=75C
T
C
=125C
I
M
t
=0.5
I (A)
M
Fig. 5-2: Non repetitive surge peak forward current
versus
overload
duration
(maximum
values)
(TO-220FPAB).
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
1.E-03
1.E-02
1.E-01
1.E+00
1.E+01
t (s)
P
Zth(j-c) / Rth(j-c)
= 0.5
= 0.2
= 0.1
Single pulse
T
=tp/T
tp
Fig. 6-2:
Relative variation of thermal impedance
junction to case versus pulse duration (TO-220FPAB).
0
0.2
0.4
0.6
0.8
1
1.2
0
25
50
75
100
125
150
T (C)
j
P
(t )
P
(25C)
ARM p
ARM
Fig. 4: Normalized avalanche power derating
versus junction temperature.
0.001
0.01
0.1
0.01
1
0.1
10
100
1000
1
t (s)
p
P
(t )
P
(1s)
ARM p
ARM
Fig. 3: Normalized avalanche power derating
versus pulse duration.
STPS16H100CT/CG/CFP/CR
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1
10
100
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
V
(V)
FM
T
j
=25C
(Maximum values)
T
j
=125C
(Maximum values)
T
j
=125C
(Maximum values)
T
j
=125C
(Typical values)
T
j
=125C
(Typical values)
I
(A)
FM
Fig. 9:
Forward voltage drop versus forward
current.
0
10
20
30
40
50
60
70
80
0
5
10
15
20
25
30
35
40
S(cm)
DPAK
Rth(j-a)(C/W)
Fig. 10: Thermal resistance junction to ambient
versus copper surface under tab (epoxy printed
board FR4, Cu = 35m).
1.E-04
1.E-03
1.E-02
1.E-01
1.E+00
1.E+01
0
10
20
30
40
50
60
70
80
90
100
V (V)
R
T
j
=150C
T
j
=125C
T
j
=25C
T
j
=100C
T
j
=75C
T
j
=50C
I (mA)
R
Fig. 7: Reverse leakage current versus reverse
voltage applied (typical values).
0.01
0.10
1.00
1
10
100
V (V)
R
F=1MHz
V
osc
=30mV
T
j
=25C
C(nF)
Fig. 8:
Junction capacitance versus reverse
voltage applied (typical values).
STPS16H100CT/CG/CFP/CR
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PACKAGE MECHANICAL DATA
TO-220FPAB
H
L3
L2
L4
L6
G
G1
F
F1
L5
D
E
L7
A
B
Dia
F2
REF.
DIMENSIONS
Millimeters
Inches
Min.
Max.
Min.
Max.
A
4.4
4.6
0.173
0.181
B
2.5
2.7
0.098
0.106
D
2.5
2.75
0.098
0.108
E
0.45
0.70
0.018
0.027
F
0.75
1
0.030
0.039
F1
1.15
1.70
0.045
0.067
F2
1.15
1.70
0.045
0.067
G
4.95
5.20
0.195
0.205
G1
2.4
2.7
0.094
0.106
H
10
10.4
0.393
0.409
L2
16 Typ.
0.63 Typ.
L3
28.6
30.6
1.126
1.205
L4
9.8
10.6
0.386
0.417
L5
2.9
3.6
0.114
0.142
L6
15.9
16.4
0.626
0.646
L7
9.00
9.30
0.354
0.366
Dia.
3.00
3.20
0.118
0.126
PACKAGE MECHANICAL DATA
I
2
PAK
e
D
L
L1
L2
b1
b
b2
E
A
c2
A1
c
REF.
DIMENSIONS
Millimeters
Inches
Min.
Max.
Min.
Max.
A
4.40
4.60
0.173
0.181
A1
2.49
2.69
0.098
0.106
b
0.70
0.93
0.028
0.037
b1
1.14
1.17
0.044
0.046
b2
1.14
1.17
0.044
0.046
c
0.45
0.60
0.018
0.024
c2
1.23
1.36
0.048
0.054
D
8.95
9.35
0.352
0.368
e
2.40
2.70
0.094
0.106
E
10.0
10.4
0.394
0.409
L
13.1
13.6
0.516
0.535
L1
3.48
3.78
0.137
0.149
L2
1.27
1.40
0.050
0.055
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