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STPS16L45CT/CFP
July 2003 - Ed : 3C
LOW DROP POWER SCHOTTKY RECTIFIER
Dual center tap Schottky barrier rectifier designed
for high frequency Switched Mode Power Supplies
and high frequency DC to DC converters.
Packaged in TO-220AB and TO-220FPAB, these
devices are intended for use in low voltage, high
frequency converters, free-wheeling and polarity
protection applications.
DESCRIPTION
s
LOW FORWARD VOLTAGE DROP MEANING
VERY SMALL CONDUCTION LOSSES
s
LOW SWITCHING LOSSES ALLOWING HIGH
FREQUENCY OPERATION
s
INSULATED PACKAGE: TO-220FPAB
Insulated voltage: 2000V DC
Capacitance: 12 pF
s
AVALANCHE CAPABILITY SPECIFIED
FEATURES AND BENEFITS
Symbol
Parameter
Value
Unit
V
RRM
Repetitive peak reverse voltage
45
V
I
F(RMS)
RMS forward current
30
A
I
F(AV)
Average forward current
TO-220AB
Tc = 140C
= 0.5
Per diode
8
A
Per device
16
TO-220FPAB
Tc = 125C
= 0.5
Per diode
8
A
Per device
16
I
FSM
Surge non repetitive forward current
tp = 10 ms sinusoidal
180
A
I
RRM
Repetitive peak reverse current
tp=2 s square F=1kHz
1
A
I
RSM
Non repetitive peak reverse current
tp = 100 s square
2
A
P
ARM
Repetitive peak avalanche power
tp = 1s
Tj = 25C
4000
W
T
stg
Storage temperature range
- 65 to + 150
C
Tj
Maximum operating junction temperature *
150
C
dV/dt
Critical rate of rise of reverse voltage
10000
V/s
ABSOLUTE RATINGS (limiting values, per diode)
I
F(AV)
2 x 8 A
V
RRM
45 V
Tj (max)
150 C
V
F
(max)
0.45 V
MAIN PRODUCTS CHARACTERISTICS
K
A1
A2
TO-220AB
STPS16L45CT
A1
K
A2
* :
dPtot
dTj
Rth j
a
<
-
1
(
)
thermal runaway condition for a diode on its own heatsink
A1
A2
K
TO-220FPAB
STPS16L45CFP
STPS16L45CT/CFP
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Symbol
Parameter
Tests Conditions
Min.
Typ.
Max.
Unit
I
R
*
Reverse leakage
current
Tj = 25C
V
R
= V
RRM
0.2
mA
Tj = 125C
65
130
mA
V
F
*
Forward voltage drop
Tj = 25
C
I
F
= 8 A
0.5
V
Tj = 125C
I
F
= 8 A
0.39
0.45
Tj = 25
C
I
F
= 16 A
0.63
Tj = 125C
I
F
= 16 A
0.55
0.64
Pulse test : * tp = 380 s,
< 2%
To evaluate the conduction losses use the following equation :
P = 0.26 x I
F(AV)
+ 0.024 I
F
2
(RMS)
STATIC ELECTRICAL CHARACTERISTICS (per diode)
Symbol
Parameter
Value
Unit
R
th(j-c)
Junction to case
TO-220AB
Per diode
Total
Coupling
2.2
1.3
0.3
C/W
TO-220FPAB
Per diode
Total
Coupling
4.5
3.5
2.5
When the diodes 1 and 2 are used simultaneously :
Tj(diode 1) = P(diode1) x R
th(j-c)
(Per diode) + P(diode 2) x R
th(c)
THERMAL RESISTANCES
0
1
2
3
4
5
6
7
8
9
10
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
5.5
6.0
IF(av) (A)
PF(av)(W)
T
=tp/T
tp
= 1
= 0.5
= 0.2
= 0.1
= 0.05
Fig. 1: Average forward power dissipation versus
average forward current (per diode).
0
25
50
75
100
125
150
0
1
2
3
4
5
6
7
8
9
IF(av)(A)
Rth(j-a)=15C/W
Rth(j-a)=Rth(j-c)
Tamb(C)
T
=tp/T
tp
TO-220AB
TO-220FPAB
Fig.
2:
Average
current
versus
ambient
temperature (
= 0.5) (per diode).
0
0.2
0.4
0.6
0.8
1
1.2
0
25
50
75
100
125
150
T (C)
j
P
(t )
P
(25C)
ARM p
ARM
Fig. 4: Normalized avalanche power derating
versus junction temperature.
0.001
0.01
0.1
0.01
1
0.1
10
100
1000
1
t (s)
p
P
(t )
P
(1s)
ARM p
ARM
Fig. 3: Normalized avalanche power derating
versus pulse duration.
STPS16L45CT/CFP
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1E-3
1E-2
1E-1
1E+0
0
20
40
60
80
100
120
IM(A)
Tc=75C
Tc=25C
Tc=125C
t(s)
I
M
t
=0.5
Fig. 5-1: Non repetitive surge peak forward current
versus overload duration (maximum values per
diode, TO-220AB).
1E-4
1E-3
1E-2
1E-1
1E+0
0.0
0.2
0.4
0.6
0.8
1.0
tp(s)
Zth(j-c)/Rth(j-c)
= 0.1
= 0.2
= 0.5
Single pulse
T
=tp/T
tp
Fig. 6-1: Relative variation of thermal impedance
junction
to
case
versus
pulse
duration
(TO-220AB).
0
5
10
15
20
25
30
35
40
45
1E-2
1E-1
1E+0
1E+1
1E+2
2E+2
VR(V)
IR(mA)
Tj=125C
Tj=75C
Tj=25C
Tj=150C
Fig. 7: Reverse leakage current versus reverse
voltage applied (typical values) (per diode).
1
2
5
10
20
50
100
200
500
1000
2000
VR(V)
C(pF)
F=1MHz
Tj=25C
Fig. 8: Junction capacitance versus reverse
voltage applied (typical values) (per diode).
1E-3
1E-2
1E-1
1E+0
0
10
20
30
40
50
60
70
80
90
100
IM(A)
Tc=25C
Tc=100C
Tc=50C
I
M
t
=0.5
t(s)
Fig. 5-2: Non repetitive surge peak forward current
versus overload duration (maximum values per
diode, TO-220FPAB).
1E-3
1E-2
1E-1
1E+0
1E+1
0.0
0.2
0.4
0.6
0.8
1.0
tp(s)
Zth(j-c)/Rth(j-c)
T
=tp/T
tp
= 0.1
= 0.2
= 0.5
Single pulse
Fig. 6-2: Relative variation of thermal impedance
junction
to
case
versus
pulse
duration
(TO-220FPAB).
STPS16L45CT/CFP
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PACKAGE MECHANICAL DATA
TO-220FPAB
H
L3
L2
L4
L6
G
G1
F
F1
L5
D
E
L7
A
B
Dia
F2
REF.
DIMENSIONS
Millimeters
Inches
Min.
Max.
Min.
Max.
A
4.4
4.6
0.173
0.181
B
2.5
2.7
0.098
0.106
D
2.5
2.75
0.098
0.108
E
0.45
0.70
0.018
0.027
F
0.75
1
0.030
0.039
F1
1.15
1.70
0.045
0.067
F2
1.15
1.70
0.045
0.067
G
4.95
5.20
0.195
0.205
G1
2.4
2.7
0.094
0.106
H
10
10.4
0.393
0.409
L2
16 Typ.
0.63 Typ.
L3
28.6
30.6
1.126
1.205
L4
9.8
10.6
0.386
0.417
L5
2.9
3.6
0.114
0.142
L6
15.9
16.4
0.626
0.646
L7
9.00
9.30
0.354
0.366
Dia.
3.00
3.20
0.118
0.126
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
0.1
1.0
10.0
100.0
IFM(A)
Typical values
Tj=150C
Tj=125C
Tj=25C
Tj=75C
VFM(V)
Fig. 9:
Forward voltage drop versus forward
current (maximum values) (per diode).
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STPS16L45CT/CFP
A
C
D
L7
Dia
L5
L6
L9
L4
F
H2
G
G1
L2
F2
F1
E
M
REF.
DIMENSIONS
Millimeters
Inches
Min.
Max.
Min.
Max.
A
4.40
4.60
0.173
0.181
C
1.23
1.32
0.048
0.051
D
2.40
2.72
0.094
0.107
E
0.49
0.70
0.019
0.027
F
0.61
0.88
0.024
0.034
F1
1.14
1.70
0.044
0.066
F2
1.14
1.70
0.044
0.066
G
4.95
5.15
0.194
0.202
G1
2.40
2.70
0.094
0.106
H2
10
10.40
0.393
0.409
L2
16.4 typ.
0.645 typ.
L4
13
14
0.511
0.551
L5
2.65
2.95
0.104
0.116
L6
15.25
15.75
0.600
0.620
L7
6.20
6.60
0.244
0.259
L9
3.50
3.93
0.137
0.154
M
2.6 typ.
0.102 typ.
Diam.
3.75
3.85
0.147
0.151
PACKAGE MECHANICAL DATA
TO-220AB
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of
use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by
implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to
change without notice. This publication supersedes and replaces all information previously supplied.
STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written
approval of STMicroelectronics.
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Ordering type
Marking
Package
Weight
Base qty
Delivery mode
STPS16L45CT
STPS16L45CT
TO-220AB
2g
50
Tube
STPS16L45CFP STPS16L45CFP
TO-220FPAB
2g
50
Tube
s
Epoxy meets UL94,V0
s
Cooling method : C
s
Recommended torque value : 0.55 m.N
s
Maximum torque value : 0.70 m.N
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