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STPS30150C
February 2004 - Ed: 7
HIGH VOLTAGE POWER SCHOTTKY RECTIFIER
I
F(AV)
2 x 15 A
V
RRM
150 V
Tj
175C
V
F
(max)
0.75 V
MAIN PRODUCT CHARACTERISTICS
HIGH JUNCTION TEMPERATURE CAPABILITY
GOOD TRADE OFF BETWEEN LEAKAGE
CURRENT AND FORWARD VOLTAGE DROP
LOW LEAKAGE CURRENT
INSULATED PACKAGE: TO-220FPAB
Insulating voltage: 2000V DC
Capacitance: 45pF
AVALANCHE CAPABILITY SPECIFIED
FEATURES AND BENEFITS
Dual center tap schottky rectifier designed for
high
frequency
Switched
Mode
Power
Supplies.
DESCRIPTION
TO-220AB
STPS30150CT
K
A2
A1
Symbol
Parameter
Value
Unit
V
RRM
Repetitive peak reverse voltage
150
V
I
F(RMS)
RMS forward current
30
A
I
F(AV)
Average forward current
= 0.5
TO-220FPAB
Tc = 120C
per diode
per device
15
A
TO-220AB/D
2
PAK Tc = 155C
TO-247
30
I
FSM
Surge non repetitive forward current
tp = 10 ms sinusoidal
220
A
P
ARM
Repetitive peak avalanche power
tp = 1s
Tj = 25C
10500
W
T
stg
Storage temperature range
- 65 to + 175
C
Tj
Maximum operating junction temperature *
175
C
dV/dt
Critical rate of rise of reverse voltage
10000
V/s
ABSOLUTE RATINGS (limiting values, per diode)
TO-247
STPS30150CW
A1
K
A2
A1
A2
K
A1
A2
K
TO-220FPAB
STPS30150CFP
* :
dPtot
dTj
Rth j
a
<
-
1
(
)
thermal runaway condition for a diode on its own heatsink
K
A2
A1
D
2
PAK
STPS30150CG
STPS30150C
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Symbol
Parameter
Value
Unit
R
th (j-c)
Junction to case
TO-220FPAB
Per diode
Total
4
3.3
C/W
TO-220AB/D
2
PAK
Per diode
Total
1.6
0.85
TO-247
Per diode
Total
1.5
0.8
R
th (c)
TO-220FPAB
Coupling
2.6
TO-220AB/D
2
PAK
Coupling
0.1
TO-247
Coupling
0.1
THERMAL RESISTANCES
Symbol
Parameter
Tests conditions
Min.
Typ.
Max.
Unit
I
R
*
Reverse leakage current
Tj = 25C
V
R
= V
RRM
6.5
A
Tj = 125C
8
mA
V
F
**
Forward voltage drop
Tj = 25
C
I
F
= 15 A
0.92
V
Tj = 125C
I
F
= 15 A
0.69
0.75
Tj = 25
C
I
F
= 30 A
1
Tj = 125C
I
F
= 30 A
0.8
0.86
Pulse test :
* tp = 5 ms,
< 2%
** tp = 380 s,
< 2%
To evaluate the conduction losses use the following equation:
P = 0.64 x I
F(AV)
+ 0.0073 I
F
2
(RMS)
STATIC ELECTRICAL CHARACTERISTICS (per diode)
When the diodes 1 and 2 are used simultaneously :
Tj(diode 1) = P(diode1) x R
th(j-c)
(Per diode) + P(diode 2) x R
th(c)
0
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
0
2
4
6
8
10
12
14
= 0.05
= 0.1 = 0.2
= 0.5
= 1
T
=tp/T
tp
P
(W)
F(AV)
I
(A)
F(AV)
Fig. 1: Average forward power dissipation versus
average forward current (per diode).
0
2
4
6
8
10
12
14
16
18
0
25
50
75
100
125
150
175
Rth(j-a)=15C/W
Rth(j-a)=Rth(j-c)
Rth(j-a)=Rth(j-c)
TO-220FP
TO-220AB / TO-247 / D PAK
2
T
=tp/T
tp
I
(A)
F(AV)
T
(C)
amb
Fig. 2: Average forward current versus ambient
temperature (
= 0.5, per diode).
STPS30150C
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0
25
50
75
100
125
150
175
200
225
1.E-03
1.E-02
1.E-01
1.E+00
I
M
t
=0.5
I (A)
M
t(s)
Tc=50C
Tc=75C
Tc=125C
Fig. 5-1: Non repetitive surge peak forward
current versus overload duration (maximum
values, per diode) (TO-220AB, TO-247, D
2
PAK).
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
1.E-03
1.E-02
1.E-01
1.E+00
T
=tp/T
tp
= 0.5
= 0.2
= 0.1
Single pulse
Z
/R
th(j-c)
th(j-c)
t (s)
p
Fig. 6-1: Relative variation of thermal impedance
junction to case versus pulse duration (per diode)
(TO-220AB, TO-247, D
2
PAK).
0
10
20
30
40
50
60
70
80
90
100
110
120
130
140
1.E-03
1.E-02
1.E-01
1.E+00
I
M
t
=0.5
I (A)
M
t(s)
Tc=50C
Tc=75C
Tc=125C
Fig. 5-2: Non repetitive surge peak forward current
versus overload duration (maximum values, per
diode) (TO-220FPAB).
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
1.E-03
1.E-02
1.E-01
1.E+00
1.E+01
T
=tp/T
tp
= 0.5
= 0.2
= 0.1
Single pulse
Z
/R
th(j-c)
th(j-c)
t (s)
p
Fig. 6-2: Relative variation of thermal impedance
junction
to
case
versus
pulse
duration.
(TO-220FPAB)
0
0.2
0.4
0.6
0.8
1
1.2
0
25
50
75
100
125
150
T (C)
j
P
(t )
P
(25C)
ARM p
ARM
Fig. 4: Normalized avalanche power derating
versus junction temperature.
0.001
0.01
0.1
0.01
1
0.1
10
100
1000
1
t (s)
p
P
(t )
P
(1s)
ARM p
ARM
Fig. 3: Normalized avalanche power derating
versus pulse duration.
STPS30150C
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0.1
1.0
10.0
100.0
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
I
(A)
FM
V
(V)
FM
T =25C
(maximum values)
j
T =125C
(maximum values)
j
T =125C
(typical values)
j
Fig. 9: Forward voltage drop versus forward
current (maximum values, per diode).
0
25
50
75
100
125
150
1E-1
1E+0
1E+1
1E+2
1E+3
1E+4
1E+5
Tj=125C
Tj=25C
Tj=150C
Tj=100C
Tj=175C
I (A)
R
V (V)
R
Fig. 7: Reverse leakage current versus reverse
voltage applied (typical values, per diode).
1
2
5
10
20
50
100
200
10
100
1000
C(pF)
V (V)
R
F=1MHz
V
=30mV
T =25C
OSC
RMS
j
Fig. 8: Junction capacitance versus reverse voltage
applied (typical values, per diode).
0
10
20
30
40
50
60
70
80
0
5
10
15
20
25
30
35
40
S(Cu)(cm)
R
(C/W)
th(j-a)
Fig. 10: Thermal resistance junction to ambient
versus copper surface under tab (Epoxy
printed circuit board, copper thickness: 35m)
(TO-220FPAB).
STPS30150C
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PACKAGE MECHANICAL DATA
D
2
PAK
A
C2
D
R
A2
M
V2
C
A1
G
L
L3
L2
B
B2
E
*
* FLAT ZONE NO LESS THAN 2mm
8.90
3.70
1.30
5.08
16.90
10.30
FOOT PRINT DIMENSIONS (in millimeters)
REF.
DIMENSIONS
Millimeters
Inches
Min.
Max.
Min.
Max.
A
4.40
4.60
0.173
0.181
A1
2.49
2.69
0.098
0.106
A2
0.03
0.23
0.001
0.009
B
0.70
0.93
0.027
0.037
B2
1.14
1.70
0.045
0.067
C
0.45
0.60
0.017
0.024
C2
1.23
1.36
0.048
0.054
D
8.95
9.35
0.352
0.368
E
10.00
10.40
0.393
0.409
G
4.88
5.28
0.192
0.208
L
15.00
15.85
0.590
0.624
L2
1.27
1.40
0.050
0.055
L3
1.40
1.75
0.055
0.069
M
2.40
3.20
0.094
0.126
R
0.40 typ.
0.016 typ.
V2
0
8
0
8
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