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STPS30H100CW/CT
July 2003 - Ed: 5E
HIGH VOLTAGE POWER SCHOTTKY RECTIFIER
I
F(AV)
2 x 15 A
V
RRM
100 V
Tj (max)
175 C
V
F
(max)
0.67 V
MAIN PRODUCT CHARACTERISTICS
s
NEGLIGIBLE SWITCHING LOSSES
s
LOW LEAKAGE CURRENT
s
GOOD TRADE OFF BETWEEN LEAKAGE
CURRENT AND FORWARD VOLTAGE DROP
s
LOW THERMAL RESISTANCE
s
AVALANCHE CAPABILITY SPECIFIED
FEATURES AND BENEFITS
Dual center tap Schottky rectifier suited for
Switch Mode Power Supplies and high fre-
quency DC to DC converters.
Packaged in TO-247, this device is intended
for use in high frequency inverters.
DESCRIPTION
TO-247
STPS30H100CW
A1
K
A2
Symbol
Parameter
Value
Unit
V
RRM
Repetitive peak reverse voltage
100
V
I
F(RMS)
RMS forward current
30
A
I
F(AV)
Average forward current
Tc = 155C
= 0.5
Per diode
Per device
15
30
A
I
FSM
Surge non repetitive forward current
tp = 10 ms sinusoidal
250
A
I
RRM
Repetitive peak reverse current
tp = 2 s square F = 1kHz
1
A
I
RSM
Non repetitive peak reverse current
tp = 100 s square
3
A
P
ARM
Repetitive peak avalanche power
tp = 1s
Tj = 25C
10800
W
T
stg
Storage temperature range
- 65 to + 175
C
Tj
Maximum operating junction temperature *
175
C
dV/dt
Critical rate of rise of reverse voltage
10000
V/s
ABSOLUTE RATINGS (limiting values, per diode)
* :
dPtot
dTj
Rth j
a
<
-
1
(
)
thermal runaway condition for a diode on its own heatsink
A1
K
A2
TO-220AB
STPS30H100CT
A1
A2
K
STPS30H100CW/CT
2/5
Symbol
Parameter
Value
Unit
R
th (j-c)
Junction to case
Per diode
Total
1.6
0.9
C/W
R
th (c)
Coupling
0.1
THERMAL RESISTANCES
Symbol
Parameter
Tests Conditions
Min.
Typ.
Max.
Unit
I
R
*
Reverse leakage current
Tj = 25C
V
R
= V
RRM
5
A
Tj = 125C
2
6
mA
V
F
**
Forward voltage drop
Tj = 25
C
I
F
= 15 A
0.80
V
Tj = 125C
I
F
= 15 A
0.64
0.67
Tj = 25
C
I
F
= 30 A
0.93
Tj = 125C
I
F
= 30 A
0.74
0.80
STATIC ELECTRICAL CHARACTERISTICS
Pulse test :
* tp = 5 ms,
< 2%
** tp = 380 s,
< 2%
To evaluate the maximum conduction losses use the following equation :
P = 0.54 x I
F(AV)
+ 0.0086 x I
F
2
(RMS)
0
2
4
6
8
10
12
14
16
18
20
0
2
4
6
8
10
12
14
IF(av) (A)
PF(av)(W)
T
=tp/T
tp
= 1
= 0.5
= 0.2
= 0.1
= 0.05
Fig. 1: Average forward power dissipation versus
average forward current (per diode).
0
25
50
75
100
125
150
175
0
2
4
6
8
10
12
14
16
18
Tamb(C)
IF(av)(A)
Rth(j-a)=15C/W
Rth(j-a)=Rth(j-c)
T
=tp/T
tp
Fig. 2: Average forward current versus ambient
temperature (
=0.5, per diode).
When the diodes 1 and 2 are used simultaneously :
Tj(diode 1) = P(diode1) x R
th(j-c)
(Per diode) + P(diode 2) x R
th(c)
STPS30H100CW/CT
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1E-3
1E-2
1E-1
1E+0
0
20
40
60
80
100
120
140
160
180
200
220
240
t(s)
IM(A)
Tc=25C
Tc=150C
Tc=75C
I
M
t
=0.5
Fig. 5: Non repetitive surge peak forward current ver-
sus overload duration (maximum values, per diode).
0
10
20
30
40
50
60
70
80
90
100
1E-5
1E-4
1E-3
1E-2
1E-1
1E+0
2E+0
VR(V)
IR(mA)
Tj=125C
Tj=25C
Fig. 7: Reverse leakage current versus reverse
voltage applied (typical values, per diode).
1E-4
1E-3
1E-2
1E-1
1E+0
0.0
0.2
0.4
0.6
0.8
1.0
tp(s)
Zth(j-c)/Rth(j-c)
T
=tp/T
tp
Single pulse
= 0.5
= 0.2
= 0.1
Fig. 6: Relative variation of thermal impedance
junction to case versus pulse duration.
1
2
5
10
20
50
100
100
200
500
1000
VR(V)
C(pF)
F=1MHz
Tj=25C
Fig. 8: Junction capacitance versus reverse
voltage applied (typical values, per diode).
0
0.2
0.4
0.6
0.8
1
1.2
0
25
50
75
100
125
150
T (C)
j
P
(t )
P
(25C)
ARM p
ARM
Fig. 4: Normalized avalanche power derating
versus junction temperature.
0.001
0.01
0.1
0.01
1
0.1
10
100
1000
1
t (s)
p
P
(t )
P
(1s)
ARM p
ARM
Fig. 3: Normalized avalanche power derating
versus pulse duration.
STPS30H100CW/CT
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PACKAGE MECHANICAL DATA
TO-247
F2
F1
V2
L4
L2
L1
L3
D
L
L5
M
E
H
V
V
A
Dia.
F3
F4
G
= =
F(x3)
REF.
DIMENSIONS
Millimeters
Inches
Min.
Typ.
Max.
Min.
Typ.
Max.
A
4.85
5.15 0.191
0.203
D
2.20
2.60 0.086
0.102
E
0.40
0.80 0.015
0.031
F
1.00
1.40 0.039
0.055
F1
3.00
0.118
F2
2.00
0.078
F3
2.00
2.40 0.078
0.094
F4
3.00
3.40 0.118
0.133
G
10.90
0.429
H
15.45
15.75 0.608
0.620
L
19.85
20.15 0.781
0.793
L1
3.70
4.30 0.145
0.169
L2
18.50
0.728
L3
14.20
14.80 0.559
0.582
L4
34.60
1.362
L5
5.50
0.216
M
2.00
3.00 0.078
0.118
V
5
5
V2
60
60
Dia.
3.55
3.65 0.139
0.143
s
COOLING METHOD: C
s
RECOMMENDED TORQUE VALUE: 0.8 N.M.
s
MAXIMUM TORQUE VALUE: 1 N.M.
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
1
10
100
200
VFM(V)
IFM(A)
Tj=25C
Tj=125C
Fig. 9: Forward voltage drop versus forward cur-
rent (maximum values, per diode).
STPS30H100CW/CT
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Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences
of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted
by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to
change without notice. This publication supersedes and replaces all information previously supplied.
STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written
approval of STMicroelectronics.
The ST logo is a registered trademark of STMicroelectronics
2003 STMicroelectronics - Printed in Italy - All rights reserved.
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Ordering type
Marking
Package
Weight
Base qty
Delivery mode
STPS30H100CW
STPS30H100CW
TO-247
4.36g
30
Tube
STPS30H100CT
STPS30H100CT
TO-220AB
2.20 g
50
Tube
s
EPOXY MEETS UL94,V0
PACKAGE MECHANICAL DATA
TO-220AB
A
C
D
L7
Dia
L5
L6
L9
L4
F
H2
G
G1
L2
F2
F1
E
M
REF.
DIMENSIONS
Millimeters
Inches
Min.
Max.
Min.
Max.
A
4.40
4.60
0.173
0.181
C
1.23
1.32
0.048
0.051
D
2.40
2.72
0.094
0.107
E
0.49
0.70
0.019
0.027
F
0.61
0.88
0.024
0.034
F1
1.14
1.70
0.044
0.066
F2
1.14
1.70
0.044
0.066
G
4.95
5.15
0.194
0.202
G1
2.40
2.70
0.094
0.106
H2
10
10.40
0.393
0.409
L2
16.4 typ.
0.645 typ.
L4
13
14
0.511
0.551
L5
2.65
2.95
0.104
0.116
L6
15.25
15.75
0.600
0.620
L7
6.20
6.60
0.244
0.259
L9
3.50
3.93
0.137
0.154
M
2.6 typ.
0.102 typ.
Diam.
3.75
3.85
0.147
0.151
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