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STPS30L40CG/CT/CW
July 2003 - Ed: 4A
LOW DROP POWER SCHOTTKY RECTIFIER
Dual center tap schottky rectifiers suited for
Switched
Mode
Power
Supplies
and
high
frequency DC to DC converters.
Packaged in TO-247, TO-220AB and D
2
PAK
these devices are intended for use in low voltage,
high
frequency
inverters,
free-wheeling
and
polarity protection applications.
DESCRIPTION
n
VERY SMALL CONDUCTION LOSSES
n
NEGLIGIBLE SWITCHING LOSSES
n
LOW FORWARD VOLTAGE DROP
n
LOW THERMAL RESISTANCE
n
AVALANCHE CAPABILITY SPECIFIED
FEATURES AND BENEFITS
Symbol
Parameter
Value
Unit
V
RRM
Repetitive peak reverse voltage
40
V
I
F(RMS)
RMS forward current
30
A
I
F(AV)
Average forward current
Tc = 135C
= 0.5
Per diode
Per device
15
30
A
I
FSM
Surge non repetitive forward current
tp = 10 ms Sinusoidal
220
A
I
RRM
Repetitive peak reverse current
tp = 2 s square F=1kHz
1
A
I
RSM
Non repetitive peak reverse current
tp = 100 s square
3
A
P
ARM
Repetitive peak avalanche power
tp = 1s
Tj = 25C
6000
W
T
stg
Storage temperature range
- 65 to + 150
C
Tj
Maximum operating junction temperature *
150
C
dV/dt
Critical rate of rise of reverse voltage
10000
V/s
ABSOLUTE RATINGS (limiting values, per diode)
A1
K
A2
I
F(AV)
2 x 15 A
V
RRM
40 V
Tj (max)
150 C
V
F
(max)
0.50 V
MAIN PRODUCTS CHARACTERISTICS
D
2
PAK
STPS30L40CG
K
A1
A2
A2
K
A1
K
A1
A2
TO-220AB
STPS30L40CT
TO-247
STPS30L40CW
* :
dPtot
dTj
Rth j
a
<
-
1
(
)
thermal runaway condition for a diode on its own heatsink
STPS30L40CG/CT/CW
2/6
Symbol
Parameter
Tests Conditions
Min.
Typ.
Max.
Unit
I
R
*
Reverse leakage cur-
rent
Tj = 25C
V
R
= V
RRM
360
A
Tj = 100C
20
50
mA
V
F
*
Forward voltage drop
Tj = 25C
I
F
= 15 A
0.55
V
Tj = 125C
I
F
= 15 A
0.42
0.50
Tj = 25C
I
F
= 30 A
0.74
Tj = 125C
I
F
= 30 A
0.59
0.67
Pulse test : * tp = 380 s,
< 2%
To evaluate the conduction losses use the following equation :
P = 0.330 x I
F(AV)
+ 0.011 I
F
2
(RMS)
STATIC ELECTRICAL CHARACTERISTICS (per diode)
Symbol
Parameter
Value
Unit
R
th (j-c)
Junction to case
Per diode
Total
1.60
0.85
C/W
R
th (c)
Coupling
0.10
C/W
THERMAL RESISTANCES
When the diodes 1 and 2 are used simultaneously :
Tj(diode 1) = P(diode1) x R
th(j-c)
(Per diode) + P(diode 2) x R
th(c)
PF(av)(W)
0
2
4
6
8
10
12
14
16
18
20
0
2
4
6
8
10
12
IF(av)A
T
=tp/T
tp
= 1
= 0.5
= 0.2
= 0.1
= 0.05
Fig. 1: Average forward power dissipation versus
average forward current (per diode).
0
25
50
75
100
125
150
0
2
4
6
8
10
12
14
16
18
IF(av)(A)
Rth(j-a)=15C/W
Rth(j-a)=Rth(j-c)
Tamb(C)
T
=tp/T
tp
Fig.
2:
Average
current
versus
ambient
temperature (
=0.5) (per diode).
STPS30L40CG/CT/CW
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1E-3
1E-2
1E-1
1E+0
0
20
40
60
80
100
120
140
160
180
200
IM(A)
Tc=25C
Tc=125C
Tc=75C
t(s)
I
M
t
=0.5
Fig. 5: Non repetitive surge peak forward current
versus overload duration (maximum values) (per
diode).
1.0E-4
1.0E-3
1.0E-2
1.0E-1
1.0E+0
0.0
0.2
0.4
0.6
0.8
1.0
Zth(j-c)/Rth(j-c)
Single pulse
= 0.1
= 0.2
= 0.5
T
=tp/T
tp
tp(s)
Fig. 6: Relative variation of thermal transient
impedance junction to case versus pulse duration.
0
5
10
15
20
25
30
35
40
1E-2
1E-1
1E+0
1E+1
1E+2
2E+2
IR(mA)
Tj=100C
Tj=75C
Tj=25C
Tj=150C
VR(V)
Fig. 7: Reverse leakage current versus reverse
voltage applied (typical values) (per diode).
1
2
5
10
20
50
100
200
500
1000
2000
F=1MHz
Tj=25C
C(pF)
VR(V)
Fig. 8: Junction capacitance versus reverse
voltage applied (typical values) (per diode).
0
0.2
0.4
0.6
0.8
1
1.2
0
25
50
75
100
125
150
T (C)
j
P
(t )
P
(25C)
ARM p
ARM
Fig. 4: Normalized avalanche power derating
versus junction temperature.
0.001
0.01
0.1
0.01
1
0.1
10
100
1000
1
t (s)
p
P
(t )
P
(1s)
ARM p
ARM
Fig. 3: Normalized avalanche power derating
versus pulse duration.
STPS30L40CG/CT/CW
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n
COOLING METHOD : C
n
RECOMMENDED TORQUE VALUE : 0.55 M.N
n
MAXIMUM TORQUE VALUE : 0.70 M.N
PACKAGE MECHANICAL DATA
TO-220AB
A
C
D
L7
Dia
L5
L6
L9
L4
F
H2
G
G1
L2
F2
F1
E
M
REF.
DIMENSIONS
Millimeters
Inches
Min.
Max.
Min.
Max.
A
4.40
4.60
0.173
0.181
C
1.23
1.32
0.048
0.051
D
2.40
2.72
0.094
0.107
E
0.49
0.70
0.019
0.027
F
0.61
0.88
0.024
0.034
F1
1.14
1.70
0.044
0.066
F2
1.14
1.70
0.044
0.066
G
4.95
5.15
0.194
0.202
G1
2.40
2.70
0.094
0.106
H2
10
10.40
0.393
0.409
L2
16.4 typ.
0.645 typ.
L4
13
14
0.511
0.551
L5
2.65
2.95
0.104
0.116
L6
15.25
15.75
0.600
0.620
L7
6.20
6.60
0.244
0.259
L9
3.50
3.93
0.137
0.154
M
2.6 typ.
0.102 typ.
Diam.
3.75
3.85
0.147
0.151
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
1
10
100
200
IFM(A)
VFM(V)
Typical values
Tj=150C
Tj=125C
Tj=25C
Fig. 9: Forward voltage drop versus forward
current (maximum values) (per diode).
0
5
10
15
20
25
30
35
40
0
10
20
30
40
50
60
70
80
Rth(j-a) (C/W)
S(Cu) (cm)
Fig. 10: Thermal resistance junction to ambient
versus copper surface under tab (Epoxy printed
circuit board FR4, copper thickness: 35m)
(STPS30L40CG only).
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