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STPS30L60CW/CT/CG/CR
July 2003 - Ed: 3B
POWER SCHOTTKY RECTIFIER
Dual center tap Schottky rectifiers suited for
Switched
Mode
Power
Supplies
and
high
frequency DC to DC converters. Packaged in
TO-220, D
2
PAK, I
2
PAK and TO-247 this device is
intended for use in high frequency inverters.
DESCRIPTION
s
NEGLIGIBLE SWITCHING LOSSES
s
LOW FORWARD VOLTAGE DROP
s
LOW THERMAL RESISTANCE
s
AVALANCHE CAPABILITY SPECIFIED
FEATURES AND BENEFITS
Symbol
Parameter
Value
Unit
V
RRM
Repetitive peak reverse voltage
60
V
I
F(RMS)
RMS forward current
30
A
I
F(AV)
Average forward current
Tc = 130C
= 0.5
Per diode
Per device
15
30
A
I
FSM
Surge non repetitive forward current
tp = 10 ms Sinusoidal
230
A
I
RRM
Repetitive peak reverse current
tp=2 s square F=1kHz
2
A
P
ARM
Repetitive peak avalanche power
tp = 1s
Tj = 25C
7800
W
T
stg
Storage temperature range
- 65 to + 175
C
Tj
Maximum operating junction temperature *
150
C
dV/dt
Critical rate of rise of reverse voltage
10000
V/s
ABSOLUTE RATINGS (limiting values, per diode)
I
F(AV)
2 x 15 A
V
RRM
60 V
Tj (max)
150C
V
F
(max)
0.56 V
MAIN PRODUCT CHARACTERISTICS
A1
K
A2
TO-247
STPS30L60CW
* :
dPtot
dTj
Rth j
a
<
-
1
(
)
thermal runaway condition for a diode on its own heatsink
A1
K
A2
A1
A2
K
TO-220AB
STPS30L60CT
A1
A2
K
D
2
PAK
STPS30L60CG
A1
A2
K
I
2
PAK
STPS30L60CR
STPS30L60CW/CT/CG/CR
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Symbol
Parameter
Tests Conditions
Min.
Typ.
Max.
Unit
I
R
*
Reverse leakage cur-
rent
Tj = 25C
V
R
= V
RRM
480
A
Tj = 125C
77
130
mA
V
F
*
Forward voltage drop
Tj = 25
C
I
F
= 15 A
0.6
V
Tj = 125C
I
F
= 15 A
0.5
0.56
Tj = 25
C
I
F
= 30 A
0.75
Tj = 125C
I
F
= 30 A
0.65
0.7
Pulse test : * tp = 380 s,
< 2%
To evaluate the maximum conduction losses use the following equation :
P = 0.42 x I
F(AV)
+ 0.009 I
F
2
(RMS)
STATIC ELECTRICAL CHARACTERISTICS (per diode)
Symbol
Parameter
Value
Unit
R
th(j-c)
Junction to case
Per diode
Total
1.5
0.8
C/W
R
th(c)
Coupling
0.1
C/W
THERMAL RESISTANCES
0
2
4
6
8
10
12
14
16
18
20
0
2
4
6
8
10
12
PF(av)(W)
T
=tp/T
tp
IF(av) (A)
= 1
= 0.5
= 0.2
= 0.1
= 0.05
Fig. 1: Average forward power dissipation versus
average forward current (per diode).
0
25
50
75
100
125
150
0
2
4
6
8
10
12
14
16
18
IF(av)(A)
Rth(j-a)=15C/W
Rth(j-a)=Rth(j-c)
Tamb(C)
T
=tp/T
tp
Fig. 2: Average forward current versus ambient
temperature(
= 0.5, per diode).
When the diodes 1 and 2 are used simultaneously :
Tj(diode 1) = P(diode1) x R
th(j-c)
(Per diode) + P(diode 2) x R
th(c)
STPS30L60CW/CT/CG/CR
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0
5
10 15 20 25 30 35 40 45 50 55 60
1E-2
1E-1
1E+0
1E+1
1E+2
5E+2
IR(mA)
Tj=125C
Tj=25C
Tj=150C
Tj=100C
Tj=75C
Tj=50C
VR(V)
Fig. 7: Reverse leakage current versus reverse
voltage applied (typical values, per diode).
1
10
100
0.1
0.2
0.5
1.0
2.0
C(nF)
F=1MHz
Tj=25C
VR(V)
Fig. 8: Junction capacitance versus reverse
voltage applied (typical values, per diode).
1E-4
1E-3
1E-2
1E-1
1E+0
0.0
0.2
0.4
0.6
0.8
1.0
Zth(j-c)/Rth(j-c)
tp(s)
Single pulse
= 0.1
= 0.2
= 0.5
Fig. 6: Relative variation of thermal impedance
junction to case versus pulse duration.
1E-3
1E-2
1E-1
1E+0
0
50
100
150
200
250
IM(A)
Tc=25C
Tc=125C
Tc=75C
t(s)
I
M
t
=0.5
Fig. 5: Non repetitive surge peak forward
current versus overload duration (maximum
values, per diode).
0
0.2
0.4
0.6
0.8
1
1.2
0
25
50
75
100
125
150
T (C)
j
P
(t )
P
(25C)
ARM p
ARM
Fig. 4: Normalized avalanche power derating
versus junction temperature.
0.001
0.01
0.1
0.01
1
0.1
10
100
1000
1
t (s)
p
P
(t )
P
(1s)
ARM p
ARM
Fig. 3: Normalized avalanche power derating
versus pulse duration.
STPS30L60CW/CT/CG/CR
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PACKAGE MECHANICAL DATA
D
2
PAK
A
C2
D
R
A2
M
V2
C
A1
G
L
L3
L2
B
B2
E
*
* FLAT ZONE NO LESS THAN 2mm
REF.
DIMENSIONS
Millimeters
Inches
Min.
Max.
Min.
Max.
A
4.40
4.60
0.173
0.181
A1
2.49
2.69
0.098
0.106
A2
0.03
0.23
0.001
0.009
B
0.70
0.93
0.027
0.037
B2
1.14
1.70
0.045
0.067
C
0.45
0.60
0.017
0.024
C2
1.23
1.36
0.048
0.054
D
8.95
9.35
0.352
0.368
E
10.00
10.40
0.393
0.409
G
4.88
5.28
0.192
0.208
L
15.00
15.85
0.590
0.624
L2
1.27
1.40
0.050
0.055
L3
1.40
1.75
0.055
0.069
M
2.40
3.20
0.094
0.126
R
0.40 typ.
0.016 typ.
V2
0
8
0
8
8.90
3.70
1.30
5.08
16.90
10.30
FOOTPRINT
0.00 0.25 0.50 0.75 1.00 1.25 1.50 1.75 2.00 2.25 2.50
1
10
100
200
IFM(A)
Tj=25C
Tj=125C
Typical values
Tj=150C
VFM(V)
Fig. 9: Forward voltage drop versus forward
current (maximum values, per diode).
0
4
8
12
16
20
24
28
32
36
40
0
10
20
30
40
50
60
70
80
S(Cu) (cm)
Rth(j-a) (C/W)
Fig. 10: Thermal resistance junction to ambient
versus copper surface under tab for D
2
PAK (Epoxy
printed circuit board FR4, copper thickness: 35m)
STPS30L60CW/CT/CG/CR
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PACKAGE MECHANICAL DATA
TO-220AB
A
C
D
L7
Dia
L5
L6
L9
L4
F
H2
G
G1
L2
F2
F1
E
M
REF.
DIMENSIONS
Millimeters
Inches
Min.
Max.
Min.
Max.
A
4.40
4.60
0.173
0.181
C
1.23
1.32
0.048
0.051
D
2.40
2.72
0.094
0.107
E
0.49
0.70
0.019
0.027
F
0.61
0.88
0.024
0.034
F1
1.14
1.70
0.044
0.066
F2
1.14
1.70
0.044
0.066
G
4.95
5.15
0.194
0.202
G1
2.40
2.70
0.094
0.106
H2
10
10.40
0.393
0.409
L2
16.4 typ.
0.645 typ.
L4
13
14
0.511
0.551
L5
2.65
2.95
0.104
0.116
L6
15.25
15.75
0.600
0.620
L7
6.20
6.60
0.244
0.259
L9
3.50
3.93
0.137
0.154
M
2.6 typ.
0.102 typ.
Diam.
3.75
3.85
0.147
0.151
PACKAGE MECHANICAL DATA
I
2
PAK
REF.
DIMENSIONS
Millimeters
Inches
Min.
Max.
Min.
Max.
A
4.40
4.60
0.173
0.181
A1
2.49
2.69
0.098
0.106
b
0.70
0.93
0.028
0.037
b1
1.14
1.17
0.044
0.046
b2
1.14
1.17
0.044
0.046
c
0.45
0.60
0.018
0.024
c2
1.23
1.36
0.048
0.054
D
8.95
9.35
0.352
0.368
e
2.40
2.70
0.094
0.106
E
10.0
10.4
0.394
0.409
L
13.1
13.6
0.516
0.535
L1
3.48
3.78
0.137
0.149
L2
1.27
1.40
0.050
0.055
e
D
L
L1
L2
b1
b
b2
E
A
c2
A1
c
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