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STPS3545CP/CW
July 2003 - Ed: 2A
POWER SCHOTTKY RECTIFIERS
Dual center tap Schottky rectifier suited for
switchmode power supply and high frequency DC
to DC converters.
Packaged either in SOT-93 or TO-247 this device
is intended for use in low voltage, high frequency
inverters, free wheeling and polarity protection
applications.
DESCRIPTION
SOT-93
STPS3545CP
n
VERY SMALL CONDUCTION LOSSES
n
NEGLIGIBLE SWITCHING LOSSES
n
EXTREMELY FAST SWITCHING
n
LOW THERMAL RESISTANCE
n
AVALANCHE CAPABILITY SPECIFIED
FEATURES AND BENEFITS
Symbol
Parameter
Value
Unit
V
RRM
Repetitive peak reverse voltage
45
V
I
F(RMS)
RMS forward current
30
A
I
F(AV)
Average forward current
Tc = 150C
= 0.5
Per diode
Per device
17.5
35
A
I
FSM
Surge non repetitive forward current
tp = 10 ms sinusoidal
220
A
I
RRM
Repetitive Peak reverse current
tp = 2 s square
F = 1kHz
1
A
I
RSM
Non repetitive peak reverse current
tp = 100 s square
3
A
P
ARM
Repetitive peak avalanche power
tp = 1s
Tj = 25C
6000
W
T
stg
Storage temperature range
- 65 to + 175
C
Tj
Maximum operating junction temperature *
175
C
dV/dt
Critical rate of rise of reverse voltage
10000
V/s
ABSOLUTE RATINGS (limiting values, per diode)
A1
K
A2
K
A1
A2
I
F(av)
2 x 17.5 A
V
RRM
45 V
Tj (max)
175 C
V
F
(max)
0.60 V
MAIN PRODUCTS CHARACTERISTICS
TO-247
STPS3545CW
A1
K
A2
* :
dPtot
dTj
Rth j
a
<
-
1
(
)
thermal runaway condition for a diode on its own heatsink
STPS3545CP/CW
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Symbol
Parameter
Value
Unit
R
th (j-c)
Junction to case
Per diode
total
1.5
0.8
C/W
R
th (c)
Coupling
0.1
THERMAL RESISTANCES
When the diodes 1 and 2 are used simultaneously :
T
J
(diode 1) = P(diode1) x R
th(j-c)
(Per diode) + P(diode 2) x R
th(c)
Symbol
Parameter
Tests Conditions
Min.
Typ.
Max.
Unit
I
R
*
Reverse leakage cur-
rent
Tj = 25C
V
R
= V
RRM
200
A
Tj = 125C
11
40
mA
V
F
*
Forward voltage drop
Tj = 125
C
I
F
= 17.5 A
0.53
0.60
V
Tj = 25C
I
F
= 35 A
0.88
Tj = 125C
I
F
= 35 A
0.69
0.76
STATIC ELECTRICAL CHARACTERISTICS (per diode)
Pulse test : * tp = 380 s,
< 2%
To evaluate the conduction losses use the following equation :
P = 0.44 x I
F(AV)
+ 0.0091 I
F
2
(RMS)
0
2
4
6
8
10 12 14 16 18 20 22 24 26
0
2
4
6
8
10
12
14
16
18
IF(av) (A)
PF(av)(W)
T
=tp/T
tp
= 1
= 0.5
= 0.2
= 0.1
= 0.05
Fig. 1: Average forward power dissipation
versus average forward current (per diode).
0
25
50
75
100
125
150
175
0
2
4
6
8
10
12
14
16
18
20
22
Tamb(C)
IF(av)(A)
Rth(j-a)=15C/W
Rth(j-a)=Rth(j-c)
T
=tp/T
tp
Fig. 2: Average
current
versus
ambient
temperature (per diode).
STPS3545CP/CW
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1E-3
1E-2
1E-1
1E+0
0
20
40
60
80
100
120
140
160
180
200
t(s)
IM(A)
Tc=75C
Tc=100C
Tc=125C
I
M
t
=0.5
Fig. 5: Non repetitive surge peak forward current
versus overload duration (maximum
values) (per
diode).
1E-4
1E-3
1E-2
1E-1
1E+0
0.0
0.2
0.4
0.6
0.8
1.0
tp(s)
Zth(j-c)/Rth(j-c)
T
=tp/T
tp
Single pulse
= 0.1
= 0.2
= 0.5
Fig. 6: Relative variation of thermal transient
impedance junction to case versus pulse duration.
0
5
10
15
20
25
30
35
40
45
1E+0
1E+1
1E+2
1E+3
1E+4
5E+4
VR(V)
IR(A)
Tj=150C
Tj=100C
Tj=125C
Tj=75C
Tj=50C
Tj=25C
Fig. 7: Reverse leakage current versus reverse
voltage applied (typical values) (per diode).
1
2
5
10
20
50
0.1
1.0
5.0
VR(V)
C(nF)
Fig. 8: Junction capacitance versus reverse
voltage applied (typical values) (per diode).
0
0.2
0.4
0.6
0.8
1
1.2
0
25
50
75
100
125
150
T (C)
j
P
(t )
P
(25C)
ARM p
ARM
Fig. 4: Normalized avalanche power derating
versus junction temperature.
0.001
0.01
0.1
0.01
1
0.1
10
100
1000
1
t (s)
p
P
(t )
P
(1s)
ARM p
ARM
Fig. 3: Normalized avalanche power derating
versus pulse duration.
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PACKAGE MECHANICAL DATA
SOT-93
REF.
DIMENSIONS
Millimeters
Inches
Min.
Typ.
Max.
Min.
Typ.
Max.
A
4.70
4.90 1.185
0.193
C
1.90
2.10 0.075
0.083
D
2.50
0.098
D1
2.00
0.078
E
0.50
0.78 0.020
0.031
F
1.10
1.30 0.043
0.051
F3
1.75
0.069
F4
2.10
0.083
G
10.80
11.10 0.425
0.437
H
14.70
15.20 0.279
0.598
L
12.20
0.480
L2
16.20
0.638
L3
18.0
0.709
L5
3.95
4.15 0.156
0.163
L6
31.00
1.220
O
4.00
4.10 0.157
0.161
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
1
10
100
200
VFM(V)
IFM(A)
Typical values
Tj=125C
Tj=125C
Tj=25C
Fig. 9: Forward voltage drop versus forward
current (maximum values) (per diode).
STPS3545CP/CW
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use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by
implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to
change without notice. This publication supersedes and replaces all information previously supplied.
STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written
approval of STMicroelectronics.
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PACKAGE MECHANICAL DATA
TO-247
F2
F1
V2
L4
L2
L1
L3
D
L
L5
M
E
H
V
V
A
Dia.
F3
F4
G
= =
F(x3)
REF.
DIMENSIONS
Millimeters
Inches
Min.
Typ. Max. Min.
Typ. Max.
A
4.85
5.15 0.191
0.203
D
2.20
2.60 0.086
0.102
E
0.40
0.80 0.015
0.031
F
1.00
1.40 0.039
0.055
F1
3.00
0.118
F2
2.00
0.078
F3
2.00
2.40 0.078
0.094
F4
3.00
3.40 0.118
0.133
G
10.90
0.429
H
15.45
15.75 0.608
0.620
L
19.85
20.15 0.781
0.793
L1
3.70
4.30 0.145
0.169
L2
18.50
0.728
L3
14.20
14.80 0.559
0.582
L4
34.60
1.362
L5
5.50
0.216
M
2.00
3.00 0.078
0.118
V
5
5
V2
60
60
Dia.
3.55
3.65 0.139
0.143
Type
Marking
Package
Weight
Base qty
Delivery mode
STPS3545CP
STPS3545CP
SOT-93
3.97 g.
30
Tube
STPS3545CW
STPS3545CW
TO-247
4.46 g.
30
Tube
n
Cooling method: by conduction (C)
n
Recommended torque value: 0.8 N.m
n
Maximum torque value: 1.0 N.m.
n
Epoxy meets UL94,V0
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