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STPS40150CG/CT/CW
October 2003 - Ed: 1A
HIGH VOLTAGE POWER SCHOTTKY RECTIFIER
Symbol
Parameter
Value
Unit
V
RRM
Repetitive peak reverse voltage
150
V
I
F(RMS)
RMS forward current
60
A
I
F(AV)
Average forward current
Tc = 150C
= 0.5
Per diode
Per device
20
40
A
I
FSM
Surge non repetitive forward current
tp = 10 ms Sinusoidal
250
A
P
ARM
Repetitive peak avalanche power
tp = 1s
Tj = 25C
14100
W
T
stg
Storage temperature range
- 65 to + 175
C
Tj
Maximum operating junction temperature *
175
C
dV/dt
Critical rate of rise of reverse voltage
10000
V/s
ABSOLUTE RATINGS (limiting values, per diode)
I
F(AV)
2 x 20 A
V
RRM
150 V
Tj (max)
175C
V
F
(max)
0.75 V
MAJOR PRODUCTS CHARACTERISTICS
A1
K
A2
TO-247
STPS40150CW
K
A1
A2
TO-220AB
STPS40150CT
* :
dPtot
dTj
Rth j
a
<
-
1
(
)
thermal runaway condition for a diode on its own heatsink
A1
K
A2
Dual center tap Schottky rectifiers suited for high
frequency switch mode power supply.
Packaged in TO-247, TO-220AB and D
2
PAK, this
devices is intended for
use to enhance the
reliability of the application.
DESCRIPTION
HIGH JUNCTION TEMPERATURE CAPABILITY
LOW LEAKAGE CURRENT
GOOD TRADE OFF BETWEEN LEAKAGE
CURRENT AND FORWARD VOLTAGE DROP
LOW THERMAL RESISTANCE
HIGH FREQUENCY OPERATION
FEATURES AND BENEFITS
A1
A2
K
D
2
PAK
STPS40150CG
STPS40150CT/CW/CG
2/6
Symbol
Parameter
Tests Conditions
Min.
Typ.
Max.
Unit
I
R
*
Reverse leakage
current
Tj = 25C
V
R
= V
RRM
2
8
A
Tj = 125C
2
11
mA
V
F
*
Forward voltage drop
Tj = 25
C
I
F
= 20 A
0.92
V
Tj = 125C
I
F
= 20 A
0.69
0.75
Tj = 25
C
I
F
= 40 A
1.00
Tj = 125C
I
F
= 40 A
0.79
0.86
Pulse test : * tp = 380
s,
< 2%
To evaluate the conduction losses use the following equation :
P = 0.64 x IF(AV) + 0.0055 IF
2
(RMS)
STATIC ELECTRICAL CHARACTERISTICS (per diode)
Symbol
Parameter
Value
Unit
R
th(j-c)
Junction to case
TO-220AB / D
2
PAK
Per diode
Total
1.2
0.85
C/W
R
th(j-c)
Junction to case
TO-247
Per diode
Total
1.2
0.85
C/W
R
th(c)
Coupling
0.5
C/W
THERMAL RESISTANCES
When the diodes 1 and 2 are used simultaneously :
Tj(diode 1) = P(diode1) x R
th(j-c)
(Per diode) + P(diode 2) x R
th(c)
P
(W)
F(AV)
0
2
4
6
8
10
12
14
16
18
20
22
0
2
4
6
8
10
12
14
16
18
20
22
24
26
28
I
(A)
F(AV)
T
=tp/T
tp
= 0.05
= 0.1
= 0.2
= 0.5
= 1
Fig. 1: Conduction losses versus average current
(per diode).
0.001
0.01
0.1
0.01
1
0.1
10
100
1000
1
t (s)
p
P
(t )
P
(1s)
ARM p
ARM
Fig. 2: Normalized avalanche power derating
versus pulse duration.
STPS40150CT/CW/CG
3/6
0
0.2
0.4
0.6
0.8
1
1.2
25
50
75
100
125
150
T (C)
j
P
(t )
P
(25C)
ARM p
ARM
Fig. 3: Normalized avalanche power derating
versus junction temperature.
0
2
4
6
8
10
12
14
16
18
20
22
0
25
50
75
100
125
150
175
I
(A)
F(AV)
T
(C)
amb
T
=tp/T
tp
R
=R
th(j-a)
th(j-c)
R
=15C/W
th(j-a)
Fig. 4: Average forward current versus ambient
temperature (
=0.5, per diode).
0
50
100
150
200
250
1.E-03
1.E-02
1.E-01
1.E+00
I (A)
M
I
M
t
=0.5
t(s)
T =50C
c
T =75C
c
T =125C
c
Fig. 5: Non repetitive surge peak forward current
versus overload duration (maximum values, per
diode).
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
1.E-03
1.E-02
1.E-01
1.E+00
Z
/R
th(j-c)
th(j-c)
= 0.5
= 0.2
= 0.1
Single pulse
T
=tp/T
tp
t (s)
p
Fig. 6: Relative variation of thermal impedance
junction to case versus pulse duration.
1.E-01
1.E+00
1.E+01
1.E+02
1.E+03
1.E+04
1.E+05
10
30
50
70
90
110
130
150
I (A)
R
V (V)
R
T =125C
j
T =150C
j
T =100C
j
T =50C
j
T =25C
j
T =75C
j
Fig. 7: Reverse leakage current versus reverse
voltage applied (typical values, per diode).
10
100
1000
1
10
100
1000
C(pF)
V (V)
R
F=1MHz
V
=30mV
T =25C
OSC
RMS
j
Fig. 8: Junction capacitance versus reverse
voltage applied (typical values, per diode).
4/6
STPS40150CT/CW/CG
Cooling method : C
Recommended torque value : 0.55 m.N
Maximum torque value : 0.70 m.N
PACKAGE MECHANICAL DATA
TO-220AB
A
C
D
L7
Dia
L5
L6
L9
L4
F
H2
G
G1
L2
F2
F1
E
M
REF.
DIMENSIONS
Millimeters
Inches
Min.
Max.
Min.
Max.
A
4.40
4.60
0.173
0.181
C
1.23
1.32
0.048
0.051
D
2.40
2.72
0.094
0.107
E
0.49
0.70
0.019
0.027
F
0.61
0.88
0.024
0.034
F1
1.14
1.70
0.044
0.066
F2
1.14
1.70
0.044
0.066
G
4.95
5.15
0.194
0.202
G1
2.40
2.70
0.094
0.106
H2
10
10.40
0.393
0.409
L2
16.4 typ.
0.645 typ.
L4
13
14
0.511
0.551
L5
2.65
2.95
0.104
0.116
L6
15.25
15.75
0.600
0.620
L7
6.20
6.60
0.244
0.259
L9
3.50
3.93
0.137
0.154
M
2.6 typ.
0.102 typ.
Diam.
3.75
3.85
0.147
0.151
0.1
1.0
10.0
100.0
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
1.1
1.2
I
(A)
FM
V
(V)
FM
T =25C
(maximum values)
j
T =125C
(maximum values)
j
T =125C
(typical values)
j
Fig. 9: Forward voltage drop versus forward
current (per diode).
0
10
20
30
40
50
60
70
80
0
5
10
15
20
25
30
35
40
R
(C/W)
th(j-a)
S(cm)
Fig. 10: Thermal resistance junction to ambient
versus copper surface under tab (epoxy printed
board FR4, Cu=35m) (D
2
PAK).
STPS40150CT/CW/CG
5/6
A
C2
D
R
A2
M
V2
C
A1
G
L
L3
L2
B
B2
E
*
* FLAT ZONE NO LESS THAN 2mm
PACKAGE MECHANICAL DATA
D
2
PAK
8.90
3.70
1.30
5.08
16.90
10.30
FOOT PRINT DIMENSIONS (in millimeters)
REF.
DIMENSIONS
Millimeters
Inches
Min.
Max.
Min.
Max.
A
4.40
4.60
0.173
0.181
A1
2.49
2.69
0.098
0.106
A2
0.03
0.23
0.001
0.009
B
0.70
0.93
0.027
0.037
B2
1.14
1.70
0.045
0.067
C
0.45
0.60
0.017
0.024
C2
1.23
1.36
0.048
0.054
D
8.95
9.35
0.352
0.368
E
10.00
10.40
0.393
0.409
G
4.88
5.28
0.192
0.208
L
15.00
15.85
0.590
0.624
L2
1.27
1.40
0.050
0.055
L3
1.40
1.75
0.055
0.069
M
2.40
3.20
0.094
0.126
R
0.40 typ.
0.016 typ.
V2
0
8
0
8
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