STPS40H100CW
August 1999 - Ed: 3D
HIGH VOLTAGE POWER SCHOTTKY RECTIFIER
I
F(AV)
2 x 20 A
V
RRM
100 V
Tj (max)
175 C
V
F
(max)
0.61 V
MAIN PRODUCT CHARACTERISTICS
NEGLIGIBLE SWITCHING LOSSES
LOW LEAKAGE CURRENT
GOOD TRADE OFF BETWEEN LEAKAGE
CURRENT AND FORWARD VOLTAGE DROP
LOW THERMAL RESISTANCE
AVALANCHE RATED
FEATURES AND BENEFITS
Dual center tap Schottky rectifier suited for
Switch Mode Power Supplies and high fre-
quency DC to DC converters.
Packaged in TO-247, this device is intended for
use in high frequency inverters.
DESCRIPTION
TO-247
A1
K1
A2
A1
A2
K
Symbol
Parameter
Value
Unit
V
RRM
Repetitive peak reverse voltage
100
V
I
F(RMS)
RMS forward current
30
A
I
F(AV)
Average forward current
Tc = 160C
= 0.5
Per diode
Per device
20
40
A
I
FSM
Surge non repetitive forward current
tp = 10 ms sinusoidal
300
A
I
RRM
Repetitive peak reverse current
tp = 2
s F = 1kHz square
1
A
I
RSM
Non repetitive peak reverse current
tp = 100
s square
4
A
E
AS
Non repetitive avalanche energy
Tj = 25C L= 60 mH
I
as
= 3 A
36
mJ
T
stg
Storage temperature range
- 65 to + 175
C
Tj
Maximum operating junction temperature
175
C
dV/dt
Critical rate of rise of rise voltage
10000
V/
s
ABSOLUTE RATINGS (limiting values, per diode)
1/4
Symbol
Parameter
Value
Unit
R
th (j-c)
Junction to case
Per diode
Total
0.9
0.55
C/W
R
th (c)
Coupling
0.1
THERMAL RESISTANCES
Symbol
Parameter
Tests Conditions
Min.
Typ.
Max.
Unit
I
R
*
Reverse leakage current
Tj = 25
C
V
R
= V
RRM
10
A
Tj = 125
C
5
15
mA
V
F
**
Forward voltage drop
Tj = 25
C
I
F
= 20 A
0.73
V
Tj = 125
C
I
F
= 20 A
0.58
0.61
Tj = 25
C
I
F
= 40 A
0.85
Tj = 125
C
I
F
= 40 A
0.67
0.72
STATIC ELECTRICAL CHARACTERISTICS
Pulse test :
* tp = 5 ms,
< 2%
** tp = 380
s,
< 2%
To evaluate the maximum conduction losses use the following equation :
P = 0.5 x I
F(AV)
+ 0.0055 x I
F
2
(RMS)
0.0
2.5
5.0
7.5 10.0 12.5 15.0 17.5 20.0 22.5 25.0
0
2
4
6
8
10
12
14
16
IF(av) (A)
PF(av)(W)
T
=tp/T
tp
= 1
= 0.5
= 0.2
= 0.1
= 0.05
Fig. 1: Average forward power dissipation versus
average forward current (per diode).
0
25
50
75
100
125
150
175
0
2
4
6
8
10
12
14
16
18
20
22
Tamb(C)
IF(av)(A)
Rth(j-a)=15C/W
Rth(j-a)=Rth(j-c)
T
=tp/T
tp
Fig. 2: Average forward current versus ambient
temperature (
=0.5, per diode).
When the diodes 1 and 2 are used simultaneously :
Tj(diode 1) = P(diode1) x R
th(j-c)
(Per diode) + P(diode 2) x R
th(c)
STPS40H100CW
2/4
1E-3
1E-2
1E-1
1E+0
0
50
100
150
200
250
300
350
400
t(s)
IM(A)
Tc=50C
Tc=150C
Tc=100C
I
M
t
=0.5
Fig. 3: Non repetitive surge peak forward current ver-
sus overload duration (maximum values, per diode).
0
10
20
30
40
50
60
70
80
90
100
1E-4
1E-3
1E-2
1E-1
1E+0
1E+1
VR(V)
IR(mA)
Tj=125C
Tj=25C
Tj=75C
Tj=100C
Fig. 5: Reverse leakage current versus reverse
voltage applied (maximum values, per diode).
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
1
10
100
200
VFM(V)
IFM(A)
Tj=125C
Typical values
Tj=125C
Maximum values
Tj=25C
Maximum values
Fig. 7: Forward voltage drop versus forward cur-
rent (per diode).
1E-3
1E-2
1E-1
1E+0
0.0
0.2
0.4
0.6
0.8
1.0
tp(s)
Zth(j-c)/Rth(j-c)
Single pulse
= 0.5
= 0.2
= 0.1
T
=tp/T
tp
Fig. 4: Relative variation of thermal impedance
junction to case versus pulse duration.
1
2
5
10
20
50
100
0.1
1.0
3.0
VR(V)
C(nF)
F=1MHz
Tj=25C
Fig. 6: Junction capacitance versus reverse
voltage applied (typical values, per diode).
STPS40H100CW
3/4
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of
use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by
implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to
change without notice. This publication supersedes and replaces all information previously supplied.
STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written ap-
proval of STMicroelectronics.
The ST logo is a registered trademark of STMicroelectronics
1999 STMicroelectronics - Printed in Italy - All rights reserved.
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PACKAGE MECHANICAL DATA
TO-247
F2
F1
V2
L4
L2
L1
L3
D
L
L5
M
E
H
V
V
A
Dia.
F3
F4
G
= =
F(x3)
REF.
DIMENSIONS
Millimeters
Inches
Min.
Typ.
Max.
Min.
Typ.
Max.
A
4.85
5.15 0.191
0.203
D
2.20
2.60 0.086
0.102
E
0.40
0.80 0.015
0.031
F
1.00
1.40 0.039
0.055
F1
3.00
0.118
F2
2.00
0.078
F3
2.00
2.40 0.078
0.094
F4
3.00
3.40 0.118
0.133
G
10.90
0.429
H
15.45
15.75 0.608
0.620
L
19.85
20.15 0.781
0.793
L1
3.70
4.30 0.145
0.169
L2
18.50
0.728
L3
14.20
14.80 0.559
0.582
L4
34.60
1.362
L5
5.50
0.216
M
2.00
3.00 0.078
0.118
V
5
5
V2
60
60
Dia.
3.55
3.65 0.139
0.143
Cooling method: C
Recommended torque value: 0.8 N.m.
Maximum torque value: 1 N.m.
Ordering type
Marking
Package
Weight
Base qty
Delivery mode
STPS40H100CW
STPS40H100CW
TO-247
4.36g
30
Tube
Epoxy meets UL94,V0
STPS40H100CW
4/4
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