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Электронный компонент: STPS5H100B-TR

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STPS5H100B/-1
July 1999 - Ed: 4B
HIGH VOLTAGE POWER SCHOTTKY RECTIFIER
Schottky barrier rectifier designed for high fre-
quency miniature Switched Mode Power Sup-
plies such as adaptators and on board DC to
DC converters.
DESCRIPTION
DPAK
STPS5H100B
A
NC
K
Symbol
Parameter
Value
Unit
V
RRM
Repetitive peak reverse voltage
100
V
I
F(RMS)
RMS forward current
10
A
I
F(AV)
Average forward current
Tc = 165C
= 0.5
5
A
I
FSM
Surge non repetitive forward current
tp = 10 ms sinusoidal
75
A
I
RRM
Repetitive peak reverse current
tp = 2
s square F = 1kHz
1
A
I
RSM
Non repetitive peak reverse current
tp = 100
s square
2
A
T
stg
Storage temperature range
- 65 to + 175
C
Tj
Maximum operating junction temperature *
175
C
dV/dt
Critical rate of rise of reverse voltage
10000
V/
s
ABSOLUTE RATINGS (limiting values)
I
F(AV)
5 A
V
RRM
100 V
Tj (max)
175 C
V
F
(max)
0.61 V
MAIN PRODUCT CHARACTERISTICS
NEGLIGIBLE SWITCHING LOSSES
HIGH JUNCTION TEMPERATURE CAPABILITY
LOW LEAKAGE CURRENT
GOOD TRADE OFF BETWEEN LEAKAGE
CURRENT AND FORWARD VOLTAGE DROP
AVALANCHE RATED
FEATURES AND BENEFITS
IPAK
STPS5H100B-1
A
NC
K
K
* :
dPtot
dTj
<
1
Rth
(
j
-
a
)
thermal runaway condition for a diode on its own heatsink
1/5
Symbol
Parameter
Value
Unit
R
th (j-c)
Junction to case
2.5
C/W
THERMAL RESISTANCES
Symbol
Parameter
Tests Conditions
Min.
Typ.
Max.
Unit
I
R
*
Reverse leakage current
Tj = 25
C
V
R
= V
RRM
3.5
A
Tj = 125
C
1.3
4.5
mA
V
F
**
Forward voltage drop
Tj = 25
C
I
F
= 5 A
0.73
V
Tj = 125
C
I
F
= 5 A
0.57
0.61
Tj = 25
C
I
F
= 10 A
0.85
Tj = 125
C
I
F
= 10 A
0.66
0.71
STATIC ELECTRICAL CHARACTERISTICS
Pulse test :
* tp = 5 ms,
< 2%
** tp = 380
s,
< 2%
To evaluate the maximum conduction losses use the following equation :
P = 0.51 x I
F(AV)
+ 0.02 x I
F
2
(RMS)
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
IF(av) (A)
PF(av)(W)
= 1
= 0.5
= 0.2
= 0.1
= 0.05
T
=tp/T
tp
Fig. 1: Average forward power dissipation versus
average forward current.
0
20
40
60
80
100
120
140
160
180
0
1
2
3
4
5
6
Tamb(C)
IF(av)(A)
Rth(j-a)=80C/W
Rth(j-a)=Rth(j-c)
T
=tp/T
tp
Fig. 2: Average forward current versus ambient
temperature (
=0.5).
STPS5H100B/-1
2/5
1E-3
1E-2
1E-1
1E+0
0
10
20
30
40
50
60
70
80
90
100
110
120
t(s)
IM(A)
Tc=75C
Tc=50C
Tc=125C
I
M
t
=0.5
Fig. 3: Non repetitive surge peak forward current
versus overload duration (maximum values).
0
10
20
30
40
50
60
70
80
90 100
1E-2
1E-1
1E+0
1E+1
1E+2
1E+3
5E+3
VR(V)
IR(A)
Tj=125C
Tj=25C
Fig. 5: Reverse leakage current versus reverse
voltage applied.
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
0.1
1.0
10.0
50.0
VFM(V)
IFM(A)
Tj=25C
Tj=125C
Fig. 7: Forward voltage drop versus forward cur-
rent (maximum values).
1E-3
1E-2
1E-1
1E+0
0.0
0.2
0.4
0.6
0.8
1.0
tp(s)
Zth(j-c)/Rth(j-c)
Single pulse
= 0.5
= 0.2
= 0.1
T
=tp/T
tp
Fig. 4: Relative variation of thermal impedance
junction to case versus pulse duration.
1
10
100
10
100
1000
VR(V)
C(pF)
F=1MHz
Tj=25C
Fig. 6: Junction capacitance versus reverse
voltage applied (typical values).
0
2
4
6
8
10
12
14
16
18
20
0
10
20
30
40
50
60
70
80
90
100
S(Cu) (cm)
Rth(j-a) (C/W)
Fig. 8: Thermal resistance junction to ambient
versus copper surface under tab (Epoxy printed
circuit board FR4, copper thickness: 35
m)
(DPAK).
STPS5H100B/-1
3/5
PACKAGE MECHANICAL DATA
DPAK
REF.
DIMENSIONS
Millimeters
Inches
Min.
Max
Min.
Max.
A
2.20
2.40
0.086
0.094
A1
0.90
1.10
0.035
0.043
A2
0.03
0.23
0.001
0.009
B
0.64
0.90
0.025
0.035
B2
5.20
5.40
0.204
0.212
C
0.45
0.60
0.017
0.023
C2
0.48
0.60
0.018
0.023
D
6.00
6.20
0.236
0.244
E
6.40
6.60
0.251
0.259
G
4.40
4.60
0.173
0.181
H
9.35
10.10
0.368
0.397
L2
0.80 typ.
0.031 typ.
L4
0.60
1.00
0.023
0.039
V2
0
8
0
8
6.7
6.7
3
3
1.6
1.6
2.3
2.3
FOOT PRINT (in millimeters)
STPS5H100B/-1
4/5
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of
use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by
implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to
change without notice. This publication supersedes and replaces all information previously supplied.
STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written ap-
proval of STMicroelectronics.
The ST logo is a registered trademark of STMicroelectronics
1999 STMicroelectronics - Printed in Italy - All rights reserved.
STMicroelectronics GROUP OF COMPANIES
Australia - Brazil - China - Finland - France - Germany - Hong Kong - India - Italy - Japan - Malaysia
Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - U.S.A.
http://www.st.com
PACKAGE MECHANICAL DATA
IPAK
Ordering type
Marking
Package
Weight
Base qty
Delivery mode
STPS5H100B
S5H100
DPAK
0.30g
75
Tube
STPS5H100B-TR
S5H100
DPAK
0.30g
2500
Tape & reel
STPS5H100B-1
S5H100
IPAK
0.35g
75
Tube
Epoxy meets UL94,V0
H
L
L1
G
B5
B
V1
D
C
A1
A3
A
C2
B3
B6
L2
E
B2
REF.
DIMENSIONS
Millimeters
Inches
Min.
Typ.
Max.
Min.
Typ.
Max.
A
2.2
2.4
0.086
0.094
A1
0.9
1.1
0.035
0.043
A3
0.7
1.3
0.027
0.051
B
0.64
0.9
0.025
0.035
B2
5.2
5.4
0.204
0.212
B3
0.85
0.033
B5
0.3
0.035
B6
0.95
0.037
C
0.45
0.6
0.017
0.023
C2
0.48
0.6
0.019
0.023
D
6
6.2
0.236
0.244
E
6.4
6.6
0.252
0.260
G
4.4
4.6
0.173
0.181
H
15.9
16.3 0.626
0.641
L
9
9.4
0.354
0.370
L1
0.8
1.2
0.031
0.047
L2
0.8
1
0.031 0.039
V1
10
10
STPS5H100B/-1
5/5