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STPS6030CW
July 2003 - Ed: 3A
LOW DROP POWER SCHOTTKY RECTIFIER
Dual Schottky rectifier suited for switch Mode
Power Supply and high frequency DC to DC
converters.
Packaged in TO-247, this device is intended for
use in low voltage high frequency inverters, free
wheeling and polarity protection applications.
DESCRIPTION
s
VERY SMALL CONDUCTION LOSSES
s
NEGLIGIBLE SWITCHING LOSSES
s
EXTREMELY FAST SWITCHING
s
LOW
FORWARD
VOLTAGE
DROP
FOR
HIGHER EFFICIENCY
s
LOW THERMAL RESISTANCE
s
AVALANCHE CAPABILITY SPECIFIED
FEATURES AND BENEFITS
Symbol
Parameter
Value
Unit
V
RRM
Repetitive peak reverse voltage
30
V
I
F(RMS)
RMS forward current
45
A
I
F(AV)
Average forward
current
Tc = 130C
= 0.5
Per diode
Per device
30
60
A
I
FSM
Surge non repetitive forward current
tp = 10 ms Sinusoidal
300
A
I
RRM
Peak repetitive reverse current
tp=2 s square
F=1kHz
2
A
P
ARM
Repetitive peak avalanche power
tp = 1s
Tj = 25C
7700
W
T
stg
Storage temperature range
- 65 to + 150
C
Tj
Maximum operating junction temperature *
150
C
dV/dt
Critical rate of rise of reverse voltage (rated V
R
, Tj = 25C)
10000
V/s
ABSOLUTE RATINGS (limiting values, per diode)
I
F(AV)
2 x 30 A
V
RRM
30 V
Tj (max)
150C
V
F
(max)
0.45 V
MAJOR PRODUCTS CHARACTERISTICS
A1
K
A2
TO-247
STPS6030CW
* :
dPtot
dTj
Rth j
a
<
-
1
(
)
thermal runaway condition for a diode on its own heatsink
STPS6030CW
2/6
Symbol
Parameter
Tests Conditions
Min.
Typ.
Max.
Unit
I
R
*
Reverse leakage
current
Tj = 25C
V
R
= V
RRM
0.7
1.5
mA
Tj = 125C
200
400
V
F
*
Forward voltage drop
Tj = 25
C
I
F
= 30 A
0.46
0.52
V
Tj = 125C
I
F
= 30 A
0.39
0.45
Tj = 25
C
I
F
= 60 A
0.58
0.65
Tj = 125C
I
F
= 60 A
0.56
0.63
Pulse test : * tp = 380 *s,
< 2%
To evaluate the conduction losses use the following equation :
P = 0.27 x I
F(AV)
+ 0.006 I
F
2
(RMS)
STATIC ELECTRICAL CHARACTERISTICS (per diode)
Symbol
Parameter
Value
Unit
R
th(j-c)
Junction to case
Per diode
Total
0.9
0.6
C/W
R
th(c)
Coupling
0.3
C/W
THERMAL RESISTANCES
0
2
4
6
8
10
12
14
16
18
20
22
0
5
10
15
20
25
30
35
40
I
(A)
F(av)
= 0.05
= 0.1
= 0.2
= 0.5
= 1
P(W)
T
=tp/T
tp
Fig. 1: Conduction losses versus average current.
0
5
10
15
20
25
30
35
0
25
50
75
100
125
150
Tamb(C)
Rth
(j-a)
=Rth
(j-c)
Rth
(j-a)
=15C/W
IF(av)(A)
Fig. 2: Average forward current versus ambient
temperature(
= 0.5).
0
0.2
0.4
0.6
0.8
1
1.2
0
25
50
75
100
125
150
T (C)
j
P
(t )
P
(25C)
ARM p
ARM
Fig. 4: Normalized avalanche power derating
versus junction temperature.
0.001
0.01
0.1
0.01
1
0.1
10
100
1000
1
t (s)
p
P
(t )
P
(1s)
ARM p
ARM
Fig. 3: Normalized avalanche power derating
versus pulse duration.
STPS6030CW
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0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
1.E-03
1.E-02
1.E-01
1.E+00
tp(s)
Zth(j-c)/Rth(j-c)
= 0.5
= 0.2
= 0.1
Single pulse
T
=tp/T
tp
Fig. 6: Relative variation of thermal impedance
junction to case versus pulse duration.
1.E-02
1.E-01
1.E+00
1.E+01
1.E+02
1.E+03
1.E+04
0
5
10
15
20
25
30
VR(V)
T
j
=150C
T
j
=125C
T
j
=25C
T
j
=100C
T
j
=75C
T
j
=50C
IR(mA)
Fig. 7: Reverse leakage current versus reverse
voltage applied (typical values).
0.1
1.0
10.0
1
10
100
VR(V)
F=1MHz
V
osc
=30mV
T
j
=25C
C(nF)
Fig. 8: Junction capacitance versus reverse
voltage applied (typical values).
0
50
100
150
200
250
300
350
400
1.E-03
1.E-02
1.E-01
1.E+00
t(s)
T
C
=25C
T
C
=75C
T
C
=125C
IM(A)
I
M
t
=0.5
Fig. 5: Non repetitive surge peak forward
current versus overload duration (maximum
values).
1
10
100
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
V
(V)
FM
T
j
=25C
(Maximum values)
T
j
=125C
(Maximum values)
T
j
=125C
(Maximum values)
T
j
=125C
(Typical values)
T
j
=125C
(Typical values)
I
(A)
FM
Fig. 9: Forward voltage drop versus forward
current.
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STPS6030CW
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of
use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by
implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to
change without notice. This publication supersedes and replaces all information previously supplied.
STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written
approval of STMicroelectronics.
The ST logo is a registered trademark of STMicroelectronics
2003 STMicroelectronics - Printed in Italy - All rights reserved.
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Ordering type
Marking
Package
Weight
Base qty
Delivery mode
STPS6030CW
STPS6030CW
TO-247
4.4 g
30
Tube
s
EPOXY MEETS UL94,V0
PACKAGE MECHANICAL DATA
TO-247
F2
F1
V2
L4
L2
L1
L3
D
L
L5
M
E
H
V
V
A
Dia.
F3
F4
G
= =
F(x3)
REF.
DIMENSIONS
Millimeters
Inches
Min. Typ. Max. Min. Typ. Max.
A
4.85
5.15 0.191
0.203
D
2.20
2.60 0.086
0.102
E
0.40
0.80 0.015
0.031
F
1.00
1.40 0.039
0.055
F1
3.00
0.118
F2
2.00
0.078
F3
2.00
2.40 0.078
0.094
F4
3.00
3.40 0.118
0.133
G
10.90
0.429
H
15.45
15.75 0.608
0.620
L
19.85
20.15 0.781
0.793
L1
3.70
4.30 0.145
0.169
L2
18.50
0.728
L3
14.20
14.80 0.559
0.582
L4
34.60
1.362
L5
5.50
0.216
M
2.00
3.00 0.078
0.118
V
5
5
V2
60
60
Dia.
3.55
3.65 0.139
0.143
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