1/5
MAIN PRODUCT CHARACTERISTICS
I
F(AV)
2 x 30 A
V
RRM
100 V
T
j
175C
V
F
(max)
0.72 V
STPS60H100C
POWER SCHOTTKY RECTIFIER
REV. 1
ABSOLUTE RATINGS (limiting values, per diode)
Symbol
Parameter
Value
Unit
V
RRM
Repetitive peak reverse voltage
100
V
I
F(RMS)
RMS forward voltage
60
A
I
F(AV)
Average forward current
Tc = 150C
= 0.5
Per diode
Per device
30
60
A
I
FSM
Surge non repetitive forward current
tp = 10ms sinusoidal
300
A
P
ARM
Repetitive peak avalanche power
tp = 1s Tj = 25C
18100
W
T
stg
Storage temperature range
-65 to + 175
C
T
j
Maximum operating junction temperature *
175
C
dV/dt
Critical rate of rise of reverse voltage
10000
V/s
* :
thermal runaway condition for a diode on its own heatsink
dPt ot
dTj
---------------
1
Rth j
a
(
)
--------------------------
>
K
A1
A2
A1
K
A2
K
TO-220AB
STPS60H100CT
August 2004
FEATURES AND BENEFITS
High junction temperature capabiliy
Low leakage current
Low thermal resistance
High frequency operation
Avalanche specification
DESCRIPTION
Dual center tab Schottky rectifier suited for High
Frequency server and telecom base station
SMPS. Packaged in TO-220AB, this device com-
bines high current rating and low volume to en-
hance both reliability and power density of the
application.
Order Codes
Part Number
Marking
STPS60H100CT
STPS60H100CT
STPS60H100C
2/5
THERMAL RESISTANCE
STATIC ELECTRICAL CHARACTERISTICS (per diode)
Pulse test:
* tp = 5 ms,
< 2%
** tp = 380 s,
< 2%
To evaluate the conduction losses use the following equation: P = 0.6 x I
F(AV)
+ 0.004 I
F
2
(RMS)
Symbol
Parameter
Value
Unit
R
th(j-c)
Junction to case
Per diode
Total
1.0
0.7
C/W
R
th(c)
Coupling
0.4
When the diodes 1 and 2 are used simultaneously:
Tj(diode 1) = P(diode 1) x R
th(j-c)
(Per diode) + P(diode 2) x R
th(c)
Symbol
Parameter
Tests conditions
Min.
Typ
Max.
Unit
I
R
*
Reverse leakage current T
j
= 25C
V
R
= V
RRM
2
10
A
T
j
= 125C
3
10
mA
V
F
**
Forward voltage drop
T
j
= 25C
I
F
= 30A
0.84
V
T
j
= 125C
I
F
= 30A
0.67
0.72
T
j
= 25C
I
F
= 60A
0.92
0.98
T
j
= 125C
I
F
= 60A
0.8
0.84
STPS60H100C
3/5
Fig 1: Average forwatd power dissipation versus
average forward current (per diode).
Fig. 2: Average forward current versus ambient
temperature (
= 0.5, per diode).
Fig. 3: Normalized avalanche power derating
versus pulse duration.
Fig. 4: Normalized avalanche power derating
versus junction temperature.
Fig. 5: Non repetitive surge peak forward current
versus overload duration.
Fig. 6: Relative variation of thermal impedance
junction to case versus pulse.
0
2
4
6
8
10
12
14
16
18
20
22
24
26
0
5
10
15
20
25
30
35
P
(W)
F(AV)
T
=tp/T
tp
= 0.05
= 0.1
= 0.2
= 0.5
I
(A)
F(AV)
= 1
0
5
10
15
20
25
30
35
0
25
50
75
100
125
150
175
I
(A)
F(AV)
T
(C)
amb
T
=tp/T
tp
R
=R
th(j-a)
th(j-c)
R
=15C/W
th(j-a)
0.001
0.01
0.1
0.01
1
0.1
10
100
1000
1
t (s)
p
P
(t )
P
(1s)
ARM p
ARM
0
0.2
0.4
0.6
0.8
1
1.2
0
25
50
75
100
125
150
T (C)
j
P
(t )
P
(25C)
ARM p
ARM
0
50
100
150
200
250
300
350
400
1.E-03
1.E-02
1.E-01
1.E+00
t(s)
I (A)
M
I
M
t
=0.5
T =50C
C
T =75C
C
T =125C
C
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
1.E-03
1.E-02
1.E-01
1.E+00
Z
/R
th(j-c)
th(j-c)
t (s)
p
Single pulse
STPS60H100C
4/5
Fig. 7: Reverse leakage current versus reverse
voltage applied (typical values).
Fig. 8: Junction capacitance versus reverse
voltage applied (typical values).
Fig. 9: Forward voltage drop versus forward
current.
1.E-04
1.E-03
1.E-02
1.E-01
1.E+00
1.E+01
1.E+02
0
10
20
30
40
50
60
70
80
90
100
I (mA)
R
V (V)
R
T =50C
j
T =75C
j
T =150C
j
T =125C
j
T =100C
j
T =25C
j
0.1
1.0
10.0
1
10
100
C(nF)
V (V)
R
F=1MHz
V
=30mV
T =25C
OSC
RMS
j
1
10
100
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
I
(A)
FM
V
(V)
FM
T =125C
(typical values)
j
T =25C
(maximum values)
j
T =125C
(maximum values)
j
STPS60H100C
5/5
PACKAGE MECHANICAL DATA
TO-220AB
A
C
D
L7
Dia
L5
L6
L9
L4
F
H2
G
G1
L2
F2
F1
E
M
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of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted
by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject
to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not
authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.
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ORDERING INFORMATION
Epoxy meets UL94, V0
Cooling method: by conduction (C)
Recommended torque value: 0.8 m.N.
Maximum torque value: 1.0 m.N.
Ordering type
Marking
Package
Weight
Base qty
Delivery mode
STPS60H100CT
STPS60H100CT
TO-220AB
2.20 g
50
Tube
REF.
DIMENSIONS
Millimeters
Inches
Min.
Max.
Min.
Max.
A
4.40
4.60
0.173
0.181
C
1.23
1.32
0.048
0.051
D
2.40
2.72
0.094
0.107
E
0.49
0.70
0.019
0.027
F
0.61
0.88
0.024
0.034
F1
1.14
1.70
0.044
0.066
F2
1.14
1.70
0.044
0.066
G
4.95
5.15
0.194
0.202
G1
2.40
2.70
0.094
0.106
H2
10
10.40
0.393
0.409
L2
16.4 typ.
0.645 typ.
L4
13
14
0.511
0.551
L5
2.65
2.95
0.104
0.116
L6
15.25
15.75
0.600
0.620
L7
6.20
6.60
0.244
0.259
L9
3.50
3.93
0.137
0.154
M
2.6 typ.
0.102 typ.
Diam.
3.75
3.85
0.147
0.151
REVISION HISTORY
Table 1: Revision history
Date
Revision
Description of Changes
02-Aug-2004
1
First issue
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