ChipFind - документация

Электронный компонент: STPS60L15CW

Скачать:  PDF   ZIP
1/4
STPS60L15CW
July 2003 - Ed: 1A
LOW DROP OR-ing POWER SCHOTTKY DIODE
Dual center tap schottky rectifier packaged in
TO-247
and
suited
for
N+1
redundancy
operations, this device has an optimized forward
voltage drop to reduce the power losses in the
application.
DESCRIPTION
s
VERY LOW FORWARD VOLTAGE DROP FOR
LESS POWER DISSIPATION AND REDUCED
HEATSINK SIZE
s
OPERATION JUNCTION TEMPERATURE: 125C
s
REVERSE VOLTAGE SUITED TO OR-ing OF
3V, 5V and 12V RAILS
s
AVALANCHE CAPABILITY SPECIFIED
FEATURES AND BENEFITS
Symbol
Parameter
Value
Unit
V
RRM
Repetitive peak reverse voltage
15
V
I
F(RMS)
RMS forward current
40
A
I
F(AV)
Average forward current
Tcase = 115C
= 0.5
Per diode
30
A
Per device
60
I
FSM
Surge non repetitive forward
current
tp = 10 ms Sinusoidal
400
A
I
RRM
Peak repetitive reverse current
tp = 2s F = 1kHz
2
A
I
RSM
Non repetitive peak reverse current
tp = 100s
3
A
P
ARM
Repetitive peak avalanche power
tp = 1s
Tj = 25C
24000
W
T
stg
Storage temperature range
- 65 to + 150
C
T
j
Maximum operating junction temperature *
125
C
dV/dt
Critical rate of rise of reverse voltage
10000
V/s
ABSOLUTE RATINGS (limiting values, per diode)
A1
K
A2
I
F(AV)
2 x 30 A
V
RRM
15 V
Tj (max)
125C
V
F
(max)
0.33 V
MAJOR PRODUCT CHARACTERISTICS
TO-247
A1
K
A2
* :
dPtot
dTj
Rth j
a
<
-
1
(
)
thermal runaway condition for a diode on its own heatsink
STPS60L15CW
2/4
Symbol
Parameter
Tests Conditions
Min.
Typ.
Max.
Unit
I
R
*
Reverse leakage current
Tj = 25C
V
R
= V
RRM
16
mA
Tj = 100C
0.35
0.85
A
V
F
*
Forward voltage drop
Tj = 25
C
I
F
= 30 A
0.41
V
Tj = 25
C
I
F
= 60 A
0.49
Tj = 125C
I
F
= 30 A
0.27
0.33
Tj = 125C
I
F
= 60 A
0.39
0.44
Pulse test : * tp = 380
s,
< 2%
To evaluate the conduction losses use the following equation:
P = 0.22 x I
F(AV)
+ 0.0036 I
F
2
(RMS)
STATIC ELECTRICAL CHARACTERISTICS (Per diode)
Symbol
Parameter
Value
Unit
R
th(j-c)
Junction to case
Per diode
0.8
C/W
Total
0.55
R
th(c)
Coupling
0.3
C/W
When the diodes 1 and 2 are used simultaneously:
Tj (diode 1) = P (diode 1) x Rth(j-c) (per diode) + P (diode 2) x Rth(c)
THERMAL RESISTANCES
0.0
2.5
5.0
7.5
10.0
12.5
15.0
0
5
10
15
20
25
30
35
40
P
(W)
F(AV)
I
(A)
F(AV)
T
=tp/T
tp
= 0.05
= 0.1
= 0.2
= 0.5
= 1
Fig.
1:
Conduction
losses
versus
average
current).
0
5
10
15
20
25
30
35
0
25
50
75
100
125
I
(A)
F(AV)
T
(C)
amb
R
=R
th(j-a)
th(j-c)
R
=15C/W
th(j-a)
Fig. 2: Average forward current versus ambient
temperature (
=0.5).
0
0.2
0.4
0.6
0.8
1
1.2
0
25
50
75
100
125
150
T (C)
j
P
(t )
P
(25C)
ARM p
ARM
Fig. 4: Normalized avalanche power derating
versus junction temperature.
0.001
0.01
0.1
0.01
1
0.1
10
100
1000
1
t (s)
p
P
(t )
P
(1s)
ARM p
ARM
Fig. 3: Normalized avalanche power derating
versus pulse duration.
STPS60L15CW
3/4
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
1.E-03
1.E-02
1.E-01
1.E+00
Z
/R
th(j-c)
th(j-c)
t (s)
p
T
=tp/T
tp
Single pulse
= 0.5
= 0.2
= 0.1
Fig. 6: Relative variation of thermal impedance
junction to case versus pulse duration.
1.E+00
1.E+01
1.E+02
1.E+03
1.E+04
0.0
2.5
5.0
7.5
10.0
12.5
15.0
I (mA)
R
V (V)
R
T =125C
j
T =100C
j
T =75C
j
T =50C
j
T =25C
j
Fig. 7: Reverse leakage current versus reverse
voltage applied (typical values).
1.0
10.0
1
10
100
C(nF)
F=1MHz
V
=30mV
T =25C
OSC
j
V (V)
R
Fig. 8: Junction capacitance versus reverse
voltage applied (typical values).
1
10
100
1000
0.0
0.2
0.4
0.6
0.8
1.0
1.2
I
(A)
FM
V
(V)
FM
T =125C
(maximum values)
j
T =25C
(maximum values)
j
T =125C
(typical values)
j
Fig. 9: Forward voltage drop versus forward
current.
0
50
100
150
200
250
300
350
400
450
500
1.E-03
1.E-02
1.E-01
1.E+00
I (A)
M
t(s)
T =25C
C
T =50C
C
T =100C
C
I
M
t
=0.5
Fig. 5: Non repetitive surge peak forward current
versus overload duration (maximum values).
STPS60L15CW
4/4
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of
use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by
implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to
change without notice. This publication supersedes and replaces all information previously supplied.
STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written
approval of STMicroelectronics.
The ST logo is a registered trademark of STMicroelectronics
2003 STMicroelectronics - Printed in Italy - All rights reserved.
STMicroelectronics GROUP OF COMPANIES
Australia - Brazil - Canada - China - Finland - France - Germany
Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco - Singapore
Spain - Sweden - Switzerland - United Kingdom - United States.
http://www.st.com
PACKAGE MECHANICAL DATA
TO-247
F2
F1
V2
L4
L2
L1
L3
D
L
L5
M
E
H
V
V
A
Dia.
F3
F4
G
= =
F(x3)
REF.
DIMENSIONS
Millimeters
Inches
Min.
Typ. Max. Min.
Typ. Max.
A
4.85
5.15 0.191
0.203
D
2.20
2.60 0.086
0.102
E
0.40
0.80 0.015
0.031
F
1.00
1.40 0.039
0.055
F1
3.00
0.118
F2
2.00
0.078
F3
2.00
2.40 0.078
0.094
F4
3.00
3.40 0.118
0.133
G
10.90
0.429
H
15.45
15.75 0.608
0.620
L
19.85
20.15 0.781
0.793
L1
3.70
4.30 0.145
0.169
L2
18.50
0.728
L3
14.20
14.80 0.559
0.582
L4
34.60
1.362
L5
5.50
0.216
M
2.00
3.00 0.078
0.118
V
5
5
V2
60
60
Dia.
3.55
3.65 0.139
0.143
Ordering type
Marking
Package
Weight
Base qty
Delivery mode
STPS60L15CW STPS60L15CW
TO-247
4.4 g.
30
Tube
s
Epoxy meets UL94,V0
s
Cooling method: C
s
Recommended torque value: 0.8 m.N
s
Maximum torque value: 1.0 m.N