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STPS60L30CW
July 2003 - Ed: 3A
LOW DROP POWER SCHOTTKY RECTIFIER
Dual center tap Schottky rectifier suited for Switch
Mode Power Supply and high frequency DC to DC
converters.
Packaged in TO247, this device is intended for
use in low voltage, high frequency inverters,
free-wheeling and polarity protection applications.
DESCRIPTION
n
VERY SMALL CONDUCTION LOSSES
n
NEGLIGIBLE SWITCHING LOSSES
n
EXTREMELY FAST SWITCHING
n
LOW FORWARD VOLTAGE DROP
n
LOW THERMAL RESISTANCE
n
AVALANCHE CAPABILITY SPECIFIED
FEATURES AND BENEFITS
Symbol
Parameter
Value
Unit
V
RRM
Repetitive peak reverse voltage
30
V
I
F(RMS)
RMS forward current
50
A
I
F(AV)
Average forward current
Tc = 130
C
= 0.5
Per diode
Per device
30
60
A
I
FSM
Surge non repetitive forward current
tp = 10 ms Sinusoidal
600
A
I
RRM
Peak repetitive reverse current
tp = 2 s F = 1kHz square
2
A
P
ARM
Repetitive peak avalanche power
tp = 1s
Tj = 25C
11000
W
T
stg
Storage temperature range
- 65 to + 150
C
Tj
Maximum operating junction temperature *
150
C
dV/dt
Critical rate of rise reverse voltage
10000
V/s
ABSOLUTE RATINGS (limiting values, per diode)
A1
K
A2
I
F(AV)
2 x 30 A
V
RRM
30 V
Tj (max)
150 C
V
F
(max)
0.38 V
MAIN PRODUCT CHARACTERISTICS
A1
K
A2
TO247
* :
dPtot
dTj
Rth j
a
<
-
1
(
)
thermal runaway condition for a diode on its own heatsink
STPS60L30CW
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Symbol
Parameter
Tests Conditions
Min.
Typ.
Max.
Unit
I
R
*
Reverse leakage
current
Tj = 25
C
V
R
= V
RRM
4
mA
Tj = 125
C
250
500
mA
V
F
*
Forward voltage drop
Tj = 25
C
I
F
= 30 A
0.46
V
Tj = 125
C
I
F
= 30 A
0.33
0.38
Tj = 25
C
I
F
= 60 A
0.55
Tj = 125
C
I
F
= 60 A
0.45
0.5
Pulse test : * tp = 380 s,
< 2%
To evaluate the conduction losses use the following equation :
P = 0.26x I
F(AV)
+ 0.004 I
F
2
(RMS)
STATIC ELECTRICAL CHARACTERISTICS (per diode)
Symbol
Parameter
Value
Unit
R
th (j-c)
Junction to case
Per diode
Total
0.8
0.45
C/W
R
th (c)
Coupling
0.1
C/W
THERMAL RESISTANCE
When the diodes 1 and 2 are used simultaneously :
Tj(diode 1) = P(diode1) x R
th(j-c)
(Per diode) + P(diode 2) x R
th(c)
0
5
10
15
20
25
30
35
40
0
2
4
6
8
10
12
14
16
18
PF(av)(W)
=0.05
=0.5
=1
=0.1
=0.2
IF(av) (A)
T
=tp/T
tp
Fig. 1: Average forward power dissipation versus
average forward current (per diode).
0
25
50
75
100
125
150
0
5
10
15
20
25
30
35
IF(av)(A)
Rth(j-a)=15C/W
Rth(j-a)=Rth(j-c)
Tamb(C)
T
=tp/T
tp
Fig. 2: Average forward current versus ambient
temperature (
=0.5) (per diode).
0
0.2
0.4
0.6
0.8
1
1.2
0
25
50
75
100
125
150
T (C)
j
P
(t )
P
(25C)
ARM p
ARM
Fig. 4: Normalized avalanche power derating
versus junction temperature.
0.001
0.01
0.1
0.01
1
0.1
10
100
1000
1
t (s)
p
P
(t )
P
(1s)
ARM p
ARM
Fig. 3: Normalized avalanche power derating
versus pulse duration.
STPS60L30CW
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1E-3
1E-2
1E-1
1E+0
0
50
100
150
200
250
300
350
400
450
500
IM(A)
Tc=25C
Tc=125C
Tc=75C
t(s)
I
M
t
=0.5
Fig. 5: Non repetitive surge peak forward current
versus overload duration (maximum values) (per
diode).
1E-4
1E-3
1E-2
1E-1
1E+0
0.0
0.2
0.4
0.6
0.8
1.0
Zth(j-c)/Rth(j-c)
=0.1
=0.2
=0.5
Single pulse
tp(s)
T
=tp/T
tp
Fig. 6: Relative variation of thermal impedance
junction to case versus pulse duration.
0
5
10
15
20
25
30
1E-2
1E-1
1E+0
1E+1
1E+2
1E+3
2E+3
IR(mA)
Tj=125C
Tj=25C
Tj=150C
VR(V)
Fig. 7: Reverse leakage current versus reverse
voltage applied (typical values) (per diode).
1
2
5
10
20
50
1
2
5
10
C(nF)
F=1MHz
Tj=25C
VR(V)
Fig. 8: Junction capacitance versus reverse
voltage applied (typical values) (per diode).
0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2
1
10
100
200
IFM(A)
Tj=150C
(typical values)
Tj=125C
Tj=25C
VFM(V)
Fig. 9: Forward voltage drop versus forward
current (maximum values - per diode).
STPS60L30CW
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PACKAGE MECHANICAL DATA
TO247
F2
F1
V2
L4
L2
L1
L3
D
L
L5
M
E
H
V
V
A
Dia.
F3
F4
G
= =
F(x3)
REF.
DIMENSIONS
Millimeters
Inches
Min.
Typ. Max. Min.
Typ. Max.
A
4.85
5.15 0.191
0.203
D
2.20
2.60 0.086
0.102
E
0.40
0.80 0.015
0.031
F
1.00
1.40 0.039
0.055
F1
3.00
0.118
F2
2.00
0.078
F3
2.00
2.40 0.078
0.094
F4
3.00
3.40 0.118
0.133
G
10.90
0.429
H
15.45
15.75 0.608
0.620
L
19.85
20.15 0.781
0.793
L1
3.70
4.30 0.145
0.169
L2
18.50
0.728
L3
14.20
14.80 0.559
0.582
L4
34.60
1.362
L5
5.50
0.216
M
2.00
3.00 0.078
0.118
V
5
5
V2
60
60
Dia.
3.55
3.65 0.139
0.143
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of
use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by
implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to
change without notice. This publication supersedes and replaces all information previously supplied.
STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written
approval of STMicroelectronics.
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Ordering type
Marking
Package
Weight
Base qty
Delivery mode
STPS60L30CW
STPS60L30CW
TO247
4.36g
30
Tube
n
Epoxy meets UL94,V0
n
Cooling method: C
n
Recommended torque value: 0.8 m.N
n
Maximum torque value: 1 m.N
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