1/4
STPS60L40CW
July 2003 - Ed: 5A
LOW DROP POWER SCHOTTKY RECTIFIER
Dual center tap Schottky barrier rectifier designed
for high frequency Switched Mode Power Supplies
and DC to DC converters.
Packaged in TO-247 this device is intended for
use in low voltage, high frequency inverters,
free-wheeling and polarity protection applications.
DESCRIPTION
n
LOW FORWARD VOLTAGE DROP FOR LESS
POWER DISSIPATION
n
NEGLIGIBLE SWITCHING LOSSES ALLOWING
HIGH FREQUENCY OPERATION
n
AVALANCHE CAPABILITY SPECIFIED
FEATURES AND BENEFITS
Symbol
Parameter
Value
Unit
V
RRM
Repetitive peak reverse voltage
40
V
I
F(RMS)
RMS forward current
50
A
I
F(AV)
Average forward current
Tc = 135C
= 0.5
Per diode
30
A
Per device
60
I
FSM
Surge non repetitive forward current
tp = 10 ms Sinusoidal
600
A
I
RRM
Repetitive peak reverse current
tp = 2 s square F=1kHz
2
A
I
RSM
Non repetitive peak reverse current
tp = 100 s square
4
A
P
ARM
Repetitive peak avalanche power
tp = 1s
Tj = 25C
12300
W
T
stg
Storage temperature range
- 65 to + 150
C
Tj
Maximum operating junction temperature *
150
C
dV/dt
Critical rate of rise of reverse voltage
10000
V/s
ABSOLUTE RATINGS (limiting values, per diode)
I
F(AV)
2 x 30 A
V
RRM
40 V
Tj (max)
150C
V
F
(max)
0.50 V
MAIN PRODUCTS CHARACTERISTICS
A1
K
A2
TO-247
A1
K
A2
* :
dPtot
dTj
Rth j
a
<
-
1
(
)
thermal runaway condition for a diode on its own heatsink
STPS60L40CW
2/4
Symbol
Parameter
Tests Conditions
Min.
Typ.
Max.
Unit
I
R
*
Reverse leakage cur-
rent
Tj = 25C
V
R
= V
RRM
1.5
mA
Tj = 100C
30
110
mA
V
F
*
Forward voltage drop
Tj = 25C
I
F
= 30 A
0.55
V
Tj = 125C
I
F
= 30 A
0.44
0.5
Tj = 25C
I
F
= 60 A
0.73
Tj = 125C
I
F
= 60 A
0.64
0.72
Pulse test : * tp = 380 s,
< 2%
To evaluate the maximum conduction losses use the following equation :
P = 0.28 x I
F(AV)
+ 0.0073 I
F
2
(RMS)
STATIC ELECTRICAL CHARACTERISTICS (per diode)
Symbol
Parameter
Value
Unit
R
th (j-c)
Junction to case
Per diode
Total
0.75
0.42
C/W
R
th(c)
Coupling
0.1
C/W
THERMAL RESISTANCES
0
5
10
15
20
25
30
35
40
0
2
4
6
8
10
12
14
16
18
20
22
PF(av)(W)
IF(av) (A)
T
=tp/T
tp
= 0.05
= 0.1
= 0.5
= 1
= 0.2
Fig. 1: Average forward power dissipation versus
average forward current (per diode).
0
25
50
75
100
125
150
0
5
10
15
20
25
30
35
IF(av)(A)
Tamb(C)
Rth(j-a)=Rth(j-c)
Rth(j-a)=15C/W
T
=tp/T
tp
Fig.
2:
Average
current
versus
ambient
temperature (
= 0.5) (per diode).
When the diodes 1 and 2 are used simultaneously :
Tj(diode 1) = P(diode1) x R
th(j-c)
(Per diode) + P(diode 2) x R
th(c)
0
0.2
0.4
0.6
0.8
1
1.2
0
25
50
75
100
125
150
T (C)
j
P
(t )
P
(25C)
ARM p
ARM
Fig. 4: Normalized avalanche power derating
versus junction temperature.
0.001
0.01
0.1
0.01
1
0.1
10
100
1000
1
t (s)
p
P
(t )
P
(1s)
ARM p
ARM
Fig. 3: Normalized avalanche power derating
versus pulse duration.
STPS60L40CW
3/4
IM(A)
1E-3
1E-2
1E-1
1E+0
0
50
100
150
200
250
300
350
400
I
M
t
=0.5
t(s)
Tc=125C
Tc=75C
Tc=25C
Fig. 5: Non repetitive surge peak forward current
versus overload duration (maximum values, per
diode).
1E-4
1E-3
1E-2
1E-1
1E+0
0.0
0.2
0.4
0.6
0.8
1.0
tp(s)
Zth(j-c)/Rth(j-c)
T
=tp/T
tp
Single pulse
= 0.1
= 0.2
= 0.5
Fig. 6: Relative variation of thermal impedance
junction to case versus pulse duration.
IR(mA)
0
5
10
15
20
25
30
35
40
1E-2
1E-1
1E+0
1E+1
1E+2
1E+3
VR(V)
Tj=100C
Tj=25C
Tj=125C
Tj=150C
Fig. 7: Reverse leakage current versus reverse
voltage applied (typical values, per diode).
1
2
5
10
20
50
0.1
1.0
10.0
VR(V)
C(nF)
F=1MHz
Tj=25C
Fig. 8: Junction capacitance versus reverse
voltage applied (typical values, per diode).
IFM(A)
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1
10
100
200
Tj=125C
Tj=100C
Tj=25C
Tj=150C
Maximum values
Maximum values
Maximum values
Typical values
VFM(V)
Fig. 9: Forward voltage drop versus forward
current (per diode).
STPS60L40CW
4/4
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of
use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by
implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to
change without notice. This publication supersedes and replaces all information previously supplied.
STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written
approval of STMicroelectronics.
The ST logo is a registered trademark of STMicroelectronics
2003 STMicroelectronics - Printed in Italy - All rights reserved.
STMicroelectronics GROUP OF COMPANIES
Australia - Brazil - Canada - China - Finland - France - Germany
Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco - Singapore
Spain - Sweden - Switzerland - United Kingdom - United States.
http://www.st.com
n
COOLING METHOD : C
n
RECOMMENDED TORQUE VALUE : 0.8M.N
n
MAXIMUM TORQUE VALUE : 1.0M.N
PACKAGE MECHANICAL DATA
TO-247
F2
F1
V2
L4
L2
L1
L3
D
L
L5
M
E
H
V
V
A
Dia.
F3
F4
G
= =
F(x3)
REF.
DIMENSIONS
Millimeters
Inches
Min.
Typ. Max. Min.
Typ. Max.
A
4.85
5.15 0.191
0.203
D
2.20
2.60 0.086
0.102
E
0.40
0.80 0.015
0.031
F
1.00
1.40 0.039
0.055
F1
3.00
0.118
F2
2.00
0.078
F3
2.00
2.40 0.078
0.094
F4
3.00
3.40 0.118
0.133
G
10.90
0.429
H
15.45
15.75 0.608
0.620
L
19.85
20.15 0.781
0.793
L1
3.70
4.30 0.145
0.169
L2
18.50
0.728
L3
14.20
14.80 0.559
0.582
L4
34.60
1.362
L5
5.50
0.216
M
2.00
3.00 0.078
0.118
V
5
5
V2
60
60
Dia.
3.55
3.65 0.139
0.143
Ordering type
Marking
Package
Weight
Base qty
Delivery
mode
STPS60L40CW
STPS60L40CW
TO-247
4.4g
30
Tube
n
EPOXY MEETS UL94,V0
PDF 
ZIP