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Электронный компонент: STPS60L45CW

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STPS60L45CW
March 1999 - Ed: 2C
LOW DROP POWER SCHOTTKY RECTIFIER
Dual center tap schottky barrier rectifier suited for
5V output in off line AC/DC power supplies.
Packaged in TO-247, this device is intended for
use in low voltage, high frequency converters, free
wheeling and polarity protection applications.
DESCRIPTION
VERY SMALL CONDUCTION LOSSES
NEGLIGIBLE SWITCHING LOSSES
EXTREMELY FAST SWITCHING
LOW FORWARD VOLTAGE DROP
LOW THERMAL RESISTANCE
FEATURES AND BENEFITS
Symbol
Parameter
Value
Unit
V
RRM
Repetitive peak reverse voltage
45
V
I
F(RMS)
RMS forward current
50
A
I
F(AV)
Average forward current
Tc = 135
C
= 0.5
Per diode
Per device
30
60
A
I
FSM
Surge non repetitive forward current
tp = 10 ms Sinusoidal
600
A
I
RRM
Repetitive peak reverse current
tp = 2
s square F=1kHz
2
A
I
RSM
Non repetitive peak reverse current
tp = 100
s square
4
A
Tstg
Storage temperature range
- 65 to + 150
C
Tj
Maximum operating junction temperature (*)
150
C
dV/dt
Critical rate of rise of reverse voltage
10000
V/
s
ABSOLUTE RATINGS (limiting values, per diode)
A1
K
A2
I
F(AV)
2 x 30 A
Tj (max)
150C
V
RRM
45 V
V
F
(max)
0.50 V
MAJOR PRODUCTS CHARACTERISTICS
TO-247
A1
K
A2
* :
dPtot
dTj
<
1
Rth
(
j
-
a
)
thermal runaway condition for a diode on its own heatsink
1/4
Symbol
Parameter
Tests Conditions
Min.
Typ.
Max.
Unit
I
R
*
Reverse leakage
current
Tj = 25
C
V
R
= 45 V
1.5
mA
Tj = 125
C
175
350
V
F
*
Forward voltage drop
Tj = 25
C
I
F
= 30 A
0.55
V
Tj = 125
C
I
F
= 30 A
0.44
0.5
Tj = 25
C
I
F
= 60 A
0.73
Tj = 125
C
I
F
= 60 A
0.64
0.72
STATIC ELECTRICAL CHARACTERISTICS (per diode)
Pulse test : * tp = 380
s,
< 2%
To evaluate the conduction losses use the following equation :
P = 0.28 x I
F(AV)
+ 0.0073 I
F
2
(RMS)
0
5
10
15
20
25
30
35
40
0
2
4
6
8
10
12
14
16
18
20
22
PF(av)(W)
IF(av) (A)
T
=tp/T
tp
= 1
= 0.5
= 0.2
= 0.1
= 0.05
Fig. 1: Average forward power dissipation
versus average forward current (per diode).
0
25
50
75
100
125
150
0
5
10
15
20
25
30
35
IF(av)(A)
Tamb(C)
T
=tp/T
tp
Rth(j-a)=15C/W
Rth(j-a)=Rth(j-c)
Fig. 2: Average current versus ambient
temperature (
=0.5, per diode).
Symbol
Parameter
Value
Unit
R
th (j-c)
Junction to case
Per diode
Total
0.75
0.42
C/W
R
th (c)
Coupling
0.1
C/W
THERMAL RESISTANCES
When the diodes 1 and 2 are used simultaneously :
Tj(diode 1) = P(diode1) x R
th(j-c)
(Per diode) + P(diode 2) x R
th(c)
STPS60L45CW
2/4
0
5
10
15
20
25
30
35
40
45
1E-2
1E-1
1E+0
1E+1
1E+2
1E+3
VR(V)
IR(mA)
Tj=100C
Tj=125C
Tj=25C
Tj=150C
Fig. 5: Reverse leakage current versus reverse
voltage applied (typical values, per diode).
1
2
5
10
20
50
0.1
1.0
10.0
VR(V)
C(nF)
F=1MHz
Tj=25C
Fig. 6: Junction capacitance versus reverse
voltage applied (typical values, per diode).
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1
10
100
200
VFM(V)
IFM(A)
Typical values
Tj=150C
Maximum values
Tj=125C
Maximum values
Tj=100C
Maximum values
Tj=25C
Fig. 7: Forward voltage drop versus forward
current (per diode).
1E-3
1E-2
1E-1
1E+0
0
50
100
150
200
250
300
350
400
t(s)
IM(A)
Tc=125C
Tc=75C
Tc=25C
I
M
t
=0.5
Fig. 3: Non repetitive surge peak forward current versus
overload duration (maximum values, per diode).
1E-4
1E-3
1E-2
1E-1
1E+0
0.0
0.2
0.4
0.6
0.8
1.0
tp(s)
Zth(j-c)/Rth(j-c)
T
=tp/T
tp
Single pulse
= 0.5
= 0.2
= 0.1
Fig. 4: Relative variation of thermal transient
impedance junction to case versus pulse duration.
STPS60L45CW
3/4
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of
use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by
implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to
change without notice. This publication supersedes and replaces all information previously supplied.
STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written ap-
proval of STMicroelectronics.
The ST logo is a registered trademark of STMicroelectronics
1999 STMicroelectronics - Printed in Italy - All rights reserved.
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PACKAGE MECHANICAL DATA
TO-247
F2
F1
V2
L4
L2
L1
L3
D
L
L5
M
E
H
V
V
A
Dia.
F3
F4
G
= =
F(x3)
REF.
DIMENSIONS
Millimeters
Inches
Min.
Typ.
Max.
Min.
Typ.
Max.
A
4.85
5.15 0.191
0.203
D
2.20
2.60 0.086
0.102
E
0.40
0.80 0.015
0.031
F
1.00
1.40 0.039
0.055
F1
3.00
0.118
F2
2.00
0.078
F3
2.00
2.40 0.078
0.094
F4
3.00
3.40 0.118
0.133
G
10.90
0.429
H
15.45
15.75 0.608
0.620
L
19.85
20.15 0.781
0.793
L1
3.70
4.30 0.145
0.169
L2
18.50
0.728
L3
14.20
14.80 0.559
0.582
L4
34.60
1.362
L5
5.50
0.216
M
2.00
3.00 0.078
0.118
V
5
5
V2
60
60
Dia.
3.55
3.65 0.139
0.143
Type
Marking
Package
Weight
Base qty
Delivery mode
STPS60L45CW STPS60L45CW
TO-247
4.36 g
30
Tube
Cooling method : C
Recommended torque value : 0.8m.N
Maximum torque value : 1.0m.N
Epoxy meets UL94,V0
STPS60L45CW
4/4