1/7
STPS640CT/CF/CB/CFP
August 2003 - Ed: 6B
POWER SCHOTTKY RECTIFIER
I
F(AV)
2 x 3 A
V
RRM
40 V
Tj (max)
150 C
V
F
(max)
0.57 V
MAIN PRODUCT CHARACTERISTICS
n
VERY SMALL CONDUCTION LOSSES
n
NEGLIGIBLE SWITCHING LOSSES
n
EXTREMELY FAST SWITCHING
n
LOW FORWARD DROP VOLTAGE
n
LOW CAPACITANCE
n
LOW THERMAL RESISTANCE
n
INSULATED PACKAGE:
Insulating voltage = 2000V DC
Capacitance = 12pF
n
SMD PACKAGE (tape and reel option: -TR)
n
AVALANCHE CAPABILITY SPECIFIED
FEATURES AND BENEFITS
Dual Schottky rectifier suited to Switch Mode
Power Supplies and other Power Converters.
This device is intended for use in low and medium
voltage operation, and particulary, in high fre-
quency circuitries where low switching losses are
required (free wheeling and polarity protection).
DESCRIPTION
DPAK
STPS640CB
A1
A2
K
Symbol
Parameter
Value
Unit
V
RRM
Repetitive peak reverse voltage
40
V
I
F(RMS)
RMS forward current
TO-220AB / ISOWATT220AB /
TO-220FPAB
10
A
DPAK
6
I
F(AV)
Average forward current
= 0.5
TO-220AB
Tc = 135C
3
A
ISOWATT220AB /
TO-220FPAB
Tc = 130C
DPAK
Tc = 120C
I
FSM
Surge non repetitive forward current
tp = 10 ms Sinusoidal
75
A
I
RRM
Repetitive peak reverse current
tp = 2 s
F = 1kHz square
1
A
P
ARM
Repetitive peak avalanche power
tp = 1s
Tj = 25C
1300
W
T
stg
Storage temperature range
- 65 to + 150
C
Tj
Maximum operating junction temperature
150
C
dV/dt
Critical rate of rise of reverse voltage
10000
V/s
ABSOLUTE RATINGS (limiting values, per diode)
A1
A1
K
K
A2
A2
TO-220AB
STPS640CT
ISOWATT220AB
STPS640CF
K
A2
A1
A1
A2
K
TO-220FPAB
STPS640CFP
STPS640CT/CF/CB/CFP
2/7
Symbol
Parameter
Value
Unit
R
th (j-c)
Junction to case
TO-220AB / DPAK
Per diode
Total
5.5
3
C/W
ISOWATT220AB /
TO-220FPAB
Per diode
Total
7.5
5.2
R
th(c)
Coupling
TO-220AB
0.5
C/W
ISOWATT220AB / TO-220FPAB
3
THERMAL RESISTANCES
Symbol
Tests Conditions
Min.
Typ.
Max.
Unit
I
R
*
Reverse leakage current
Tj = 25
C
V
R
= V
RRM
100
A
Tj = 125
C
2
10
mA
V
F
*
Forward voltage drop
Tj = 25
C
I
F
= 3 A
0.63
V
Tj = 25
C
I
F
= 6 A
0.84
Tj = 125
C
I
F
= 3 A
0.5
0.57
Tj = 125
C
I
F
= 6 A
0.67
0.72
Pulse test :
* tp = 380 s,
< 2%
To evaluate the maximum conduction losses use the following equation :
P = 0.42 x I
F(AV)
+ 0.050 I
F
2
(RMS)
STATIC ELECTRICAL CHARACTERISTICS (per diode)
0
25
50
75
100
125
150
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
Tamb(C)
IF(av)(A)
Rth(j-a)=15C/W
Rth(j-a)=Rth(j-c)
ISOWATT220AB
TO-220AB/DPAK
T
=tp/T
tp
Fig. 2: Average current versus ambient temperature
(
= 0.5, per diode).
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
0.00
0.25
0.50
0.75
1.00
1.25
1.50
1.75
2.00
2.25
2.50
IF(av) (A)
PF(av)(W)
T
=tp/T
tp
= 1
= 0.5
= 0.2
= 0.1
= 0.05
Fig. 1: Average forward power dissipation versus
average forward current (per diode).
When the diodes 1 and 2 are used simultaneously :
Tj(diode 1) = P(diode1) x R
th(j-c)
(Per diode) + P(diode 2) x R
th(c)
STPS640CT/CF/CB/CFP
3/7
1E-3
1E-2
1E-1
1E+0
0
5
10
15
20
25
30
35
40
t(s)
IM(A)
Tc=75C
Tc=130C
Tc=100C
I
M
t
=0.5
Fig. 5-2: Non repetitive surge peak forward current
versus overload duration.
(Maximum values, per diode) (ISOWATT220AB /
TO-220FPAB).
1E-3
1E-2
1E-1
1E+0
0
5
10
15
20
25
30
35
40
45
t(s)
IM(A)
Tc=75C
Tc=135C
Tc=100C
I
M
t
=0.5
Fig. 5-1: Non repetitive surge peak forward current
versus overload duration.
(Maximum
values,
per
diode)
(TO-220AB /
DPAK).
1E-3
1E-2
1E-1
1E+0
0.0
0.2
0.4
0.6
0.8
1.0
tp(s)
Zth(j-c)/Rth(j-c)
Single pulse
= 0.1
= 0.2
= 0.5
T
=tp/T
tp
Fig. 6.1: Relative variation of thermal transient
impedance junction to case versus pulse duration
(TO-220AB / DPAK).
1E-3
1E-2
1E-1
1E+0
1E+1
0.0
0.2
0.4
0.6
0.8
1.0
tp(s)
Zth(j-c)/Rth(j-c)
T
=tp/T
tp
Single pulse
= 0.1
= 0.2
= 0.5
Fig. 6-2: Relative variation of thermal transient
impedance junction to case versus pulse duration
(ISOWATT220AB / TO-220FPAB).
0
0.2
0.4
0.6
0.8
1
1.2
0
25
50
75
100
125
150
T (C)
j
P
(t )
P
(25C)
ARM p
ARM
Fig. 4: Normalized avalanche power derating
versus junction temperature.
0.001
0.01
0.1
0.01
1
0.1
10
100
1000
1
t (s)
p
P
(t )
P
(1s)
ARM p
ARM
Fig. 3: Normalized avalanche power derating
versus pulse duration.
STPS640CT/CF/CB/CFP
4/7
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
0.1
1.0
10.0
IFM(A)
Tj=125C
Typical values
Tj=150C
VFM(V)
Fig. 9: Forward voltage drop versus forward current
(maximum values, per diode).
0
4
8
12
16
20
24
28
32
36
40
0
10
20
30
40
50
60
70
80
S(Cu) (cm)
Rth(j-a) (C/W)
Fig. 10: Thermal resistance junction to ambient
versus copper surface under tab (Epoxy printed
circuit board FR4, copper thickness: 35m).
0
5
10
15
20
25
30
35
40
1E-5
1E-4
1E-3
1E-2
VR(V)
IR(A)
Tj=150C
Tj=75C
Tj=100C
Tj=125C
Fig. 7: Reverse leakage current versus reverse
voltage applied (typical values, per diode).
1
2
5
10
20
50
10
100
500
VR(V)
C(pF)
F=1MHz
Tj=25C
Fig. 8: Junction capacitance versus reverse
voltage applied (typical values, per diode).
STPS640CT/CF/CB/CFP
5/7
PACKAGE MECHANICAL DATA
ISOWATT220AB
REF.
DIMENSIONS
Millimeters
Inches
Min.
Max.
Min.
Max.
A
4.40
4.60
0.173
0.181
B
2.50
2.70
0.098
0.106
D
2.50
2.75
0.098
0.108
E
0.40
0.70
0.016
0.028
F
0.75
1.00
0.030
0.039
F1
1.15
1.70
0.045
0.067
F2
1.15
1.70
0.045
0.067
G
4.95
5.20
0.195
0.205
G1
2.40
2.70
0.094
0.106
H
10.00
10.40
0.394
0.409
L2
16.00 typ.
0.630 typ.
L3
28.60
30.60
1.125
1.205
L4
9.80
10.60
0.386
0.417
L6
15.90
16.40
0.626
0.646
L7
9.00
9.30
0.354
0.366
Diam
3.00
3.20
0.118
0.126
PACKAGE MECHANICAL DATA
TO-220FPAB
H
L3
L2
L4
L6
G
G1
F
F1
L5
D
E
L7
A
B
Dia
F2
REF.
DIMENSIONS
Millimeters
Inches
Min.
Max.
Min.
Max.
A
4.4
4.6
0.173
0.181
B
2.5
2.7
0.098
0.106
D
2.5
2.75
0.098
0.108
E
0.45
0.70
0.018
0.027
F
0.75
1
0.030
0.039
F1
1.15
1.70
0.045
0.067
F2
1.15
1.70
0.045
0.067
G
4.95
5.20
0.195
0.205
G1
2.4
2.7
0.094
0.106
H
10
10.4
0.393
0.409
L2
16 Typ.
0.63 Typ.
L3
28.6
30.6
1.126
1.205
L4
9.8
10.6
0.386
0.417
L5
2.9
3.6
0.114
0.142
L6
15.9
16.4
0.626
0.646
L7
9.00
9.30
0.354
0.366
Dia.
3.00
3.20
0.118
0.126
PDF 
ZIP