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STPS80H100CY
PRELIMINARY DATASHEET
July 2003 - Ed: 2B
HIGH VOLTAGE POWER SCHOTTKY RECTIFIER
I
F(AV)
2 x 40 A
V
RRM
100 V
Tj (max)
175 C
V
F
(max)
0.70 V
MAIN PRODUCT CHARACTERISTICS
s
HIGH REVERSE VOLTAGE
s
NEGLIGIBLE SWITCHING LOSSES
s
LOW FORWARD VOLTAGE DROP
s
LOW LEAKAGE CURRENT
s
HIGH TEMPERATURE
s
LOW THERMAL RESISTANCE
s
AVALANCHE CAPABILITY SPECIFIED
FEATURES AND BENEFITS
Dual center tap Schottky rectifier suited for
Switched
Mode
Power
Supplies
and
high
frequency DC to DC converters.
Packaged in Max247, this device is intended for
use in high frequency computer and telecom
converters.
DESCRIPTION
Max247
A1
K
A2
Symbol
Parameter
Value
Unit
V
RRM
Repetitive peak reverse voltage
100
V
I
F(RMS)
RMS forward current
50
A
I
F(AV)
Average forward current
Tc = 155C
= 0.5
Per diode
Per device
40
80
A
I
FSM
Surge non repetitive forward cur-
rent
tp = 10 ms sinusoidal
400
A
I
RRM
Repetitive peak reverse current
tp = 2 s square F = 1kHz
2
A
P
ARM
Repetitive peak avalanche power
tp = 1s
Tj = 25C
39200
W
T
stg
Storage temperature range
- 65 to + 175
C
T
j
Maximum operating junction temperature *
175
C
dV/dt
Critical rate of rise of reverse voltage
10000
V/s
ABSOLUTE RATINGS (limiting values, per diode)
A1
A2
K
* :
dPtot
dTj
Rth j
a
<
-
1
(
)
thermal runaway condition for a diode on its own heatsink
STPS80H100CY
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Symbol
Parameter
Value
Unit
R
th (j-c)
Junction to case
Per diode
0.7
C/W
Total
0.5
R
th (c)
Coupling
0.3
THERMAL RESISTANCES
Symbol
Parameter
Tests conditions
Min.
Typ.
Max.
Unit
I
R
*
Reverse leakage current
Tj = 25
C
V
R
=V
RRM
20
A
Tj = 125
C
7
20
mA
V
F
**
Forward voltage drop
Tj = 25
C
I
F
= 40 A
0.8
V
Tj = 125
C
I
F
= 40 A
0.65
0.7
Tj = 25
C
I
F
= 80 A
0.94
Tj = 125
C
I
F
= 80 A
0.79
0.84
Pulse test :
* tp = 5 ms,
< 2 %
** tp = 380 s,
< 2%
To evaluate the maximum conduction losses use the following equation :
P = 0.56 x I
F(AV)
+ 0.0035 x I
F
2
(RMS)
STATIC ELECTRICAL CHARACTERISTICS (per diode)
0
5
10
15
20
25
30
35
40
45
50
0
5
10
15
20
25
30
35
IF(av) (A)
PF(av)(W)
T
=tp/T
tp
= 1
= 0.5
= 0.2
= 0.1
= 0.05
Fig. 1: Average forward power dissipation versus
average forward current (per diode).
0
25
50
75
100
125
150
175
0
5
10
15
20
25
30
35
40
45
50
Tamb(C)
IF(av)(A)
Rth(j-a)=5C/W
Rth(j-a)=Rth(j-c)
T
=tp/T
tp
Fig. 2: Average forward current versus ambient
temperature (
=0.5, per diode).
When the diodes 1 and 2 are used simultaneously :
Tj(diode 1) = P(diode1) x R
th(j-c)
(Per diode) + P(diode 2) x R
th(c)
0
0.2
0.4
0.6
0.8
1
1.2
0
25
50
75
100
125
150
T (C)
j
P
(t )
P
(25C)
ARM p
ARM
Fig. 4: Normalized avalanche power derating
versus junction temperature.
0.001
0.01
0.1
0.01
1
0.1
10
100
1000
1
t (s)
p
P
(t )
P
(1s)
ARM p
ARM
Fig. 3: Normalized avalanche power derating
versus pulse duration.
STPS80H100CY
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1E-3
1E-2
1E-1
1E+0
0
100
200
300
400
500
t(s)
IM(A)
Tc=50C
Tc=75C
Tc=110C
I
M
t
=0.5
Fig. 5: Non repetitive surge peak forward current
versus overload duration (maximum values, per
diode).
1E-3
1E-2
1E-1
1E+0
0.0
0.2
0.4
0.6
0.8
1.0
tp(s)
Zth(j-c)/Rth(j-c)
Single pulse
= 0.5
= 0.2
= 0.1
T
=tp/T
tp
Fig. 6: Relative variation of thermal impedance
junction to case versus pulse (per diode).
0
10
20
30
40
50
60
70
80
90
100
1E-1
1E+0
1E+1
1E+2
1E+3
1E+4
VR(V)
IR(A)
Tj=125C
Tj=25C
Fig. 7: Reverse leakage current versus reverse
voltage applied (typical values, per diode).
1
2
5
10
20
50
100
0.1
1.0
5.0
VR(V)
C(nF)
F=1MHz
Tj=25C
Fig. 8: Junction capacitance versus reverse
voltage applied (typical values, per diode).
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
1
10
100
500
VFM(V)
IFM(A)
Tj=25C
Tj=125C
Fig. 9: Forward voltage drop versus forward
current (maximum values, per diode).
STPS80H100CY
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Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of
use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by
implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to
change without notice. This publication supersedes and replaces all information previously supplied.
STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written
approval of STMicroelectronics.
The ST logo is a registered trademark of STMicroelectronics
2003 STMicroelectronics - Printed in Italy - All rights reserved.
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PACKAGE MECHANICAL DATA
Max247
A
E
e
L1
b1
b2
b
L
D
c
A1
REF.
DIMENSIONS
Millimeters
Inches
Min.
Max.
Min.
Max.
A
4.70
5.30
0.185
0.209
A1
2.20
2.60
0.087
0.102
b
1.00
1.40
0.038
0.055
b1
2.00
2.40
0.079
0.094
b2
3.00
3.40
0.118
0.133
c
0.40
0.80
0.016
0.031
D
19.70
10.30
0.776
0.799
e
5.35
5.55
0.211
0.219
E
15.30
15.90
0.602
0.626
L
14.20
15.20
0.559
0.598
L1
3.70
4.30
0.146
0.169
Ordering type
Marking
Package
Weight
Base qty
Delivery
mode
STPS80H100CY
STPS80H100CY
Max247
4.4g
30
Tube
s
EPOXY MEETS UL94,V0
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