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STPS8H100D/F/G/R/FP
July 2003 - Ed: 6D
HIGH VOLTAGE POWER SCHOTTKY RECTIFIER
Schottky barrier rectifier designed for high fre-
quency compact Switched Mode Power Sup-
plies such as adaptators and on board DC/DC
converters.
DESCRIPTION
TO-220AC
STPS8H100D
K
A
Symbol
Parameter
Value
Unit
V
RRM
Repetitive peak reverse voltage
100
V
I
F(RMS)
RMS forward current
30
A
I
F(AV)
Average forward current
= 0.5
TO-220AC /
I
2
PAK / D
2
PAK
Tc= 165C
8
A
ISOWATT220AC
TO-220FPAC
Tc = 150C
I
FSM
Surge non repetitive forward
current
tp = 10 ms sinusoidal
250
A
I
RRM
Repetitive peak reverse current
tp = 2 s F = 1kHz square
1
A
I
RSM
Non repetitive peak reverse current
tp = 100 s square
3
A
P
ARM
Repetitive peak avalanche power
tp = 1s
Tj = 25C
10800
W
T
stg
Storage temperature range
- 65 to + 175
C
Tj
Maximum operating junction temperature
175
C
dV/dt
Critical rate of rise of rise voltage
10000
V/s
ABSOLUTE RATINGS (limiting values)
I
2
PAK
STPS8H100R
D
2
PAK
STPS8H100G
ISOWATT220AC
STPS8H100F
K
A
NC
K
A
K
A
NC
I
F(AV)
8 A
V
RRM
100 V
Tj (max)
175 C
V
F
(max)
0.58 V
MAIN PRODUCT CHARACTERISTICS
s
NEGLIGIBLE SWITCHING LOSSES
s
HIGH JUNCTION TEMPERATURE CAPABILITY
s
LOW LEAKAGE CURRENT
s
GOOD TRADE OFF BETWEEN LEAKAGE
CURRENT
AND
FORWARD
VOLTAGE
DROP
s
INSULATED PACKAGE:
ISOWATT220AC, TO-220FPAC
Insulating voltage = 2000V DC
Capacitance = 12pF
s
AVALANCHE CAPABILITY SPECIFIED
FEATURES AND BENEFITS
K
A
TO-220FPAC
STPS8H100FP
STPS8H100D/F/G/R/FP
2/8
Symbol
Parameter
Value
Unit
R
th (j-c)
Junction to case
TO-220AC / I
2
PAK / D
2
PAK
1.6
C/W
R
th (j-c)
Junction to case
ISOWATT220AC / TO-220FPAC
4
C/W
THERMAL RESISTANCES
Symbol
Parameter
Tests Conditions
Min.
Typ.
Max.
Unit
I
R
*
Reverse leakage current
Tj = 25C
V
R
= V
RRM
4.5
A
Tj = 125C
2
6
mA
V
F
**
Forward voltage drop
Tj = 25
C
I
F
= 8 A
0.71
V
Tj = 25
C
I
F
= 10 A
0.77
Tj = 25
C
I
F
= 16 A
0.81
Tj = 125C
I
F
= 8 A
0.56
0.58
Tj = 125
C
I
F
= 10 A
0.59
0.64
Tj = 125
C
I
F
= 16 A
0.65
0.68
STATIC ELECTRICAL CHARACTERISTICS
Pulse test :
* tp = 5 ms,
< 2%
** tp = 380 s,
< 2%
To evaluate the maximum conduction losses use the following equation :
P = 0.48 x I
F(AV)
+ 0.0125 x I
F
2
(RMS)
0
1
2
3
4
5
6
7
8
9
10
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
5.5
6.0
IF(av) (A)
PF(av)(W)
= 0.2
= 0.5
= 1
= 0.05
= 0.1
T
=tp/T
tp
Fig. 1: Average forward power dissipation versus
average forward current.
(TO-220AC / ISOWATT220AC / I
2
PAK / D
2
PAK)
0.001
0.01
0.1
0.01
1
0.1
10
100
1000
1
t (s)
p
P
(t )
P
(1s)
ARM p
ARM
Fig. 2: Normalized avalanche power derating
versus pulse duration.
STPS8H100D/F/G/R/FP
3/8
0
20
40
60
80
100
120
140
160
180
0
2
4
6
8
10
Rth(j-a)=50C/W
Rth(j-a)=Rth(j-c)
Tamb(C)
IF(av)(A)
T
=tp/T
tp
Fig. 4-2: Average forward current versus ambient
temperature
(
=0.5)
(ISOWATT220AC,
TO-220FPAC).
1E-3
1E-2
1E-1
1E+0
0
10
20
30
40
50
60
70
80
90
100
Tc=75C
Tc=100C
Tc=125C
t(s)
IM(A)
I
M
t
=0.5
Fig. 5-2: Non repetitive surge peak forward current
versus overload duration (maximum values)
(ISOWATT220AC, TO-220FPAC).
1E-3
1E-2
1E-1
1E+0
0
20
40
60
80
100
120
140
160
t(s)
IM(A)
Tc=75C
Tc=100C
Tc=125C
I
M
t
=0.5
Fig. 5-1: Non repetitive surge peak forward current
versus overload duration (maximum values)
(TO-220AC / I
2
PAK / D
2
PAK).
1E-4
1E-3
1E-2
1E-1
1E+0
0.0
0.2
0.4
0.6
0.8
1.0
tp(s)
Zth(j-c)/Rth(j-c)
= 0.1
= 0.2
= 0.5
Single pulse
T
=tp/T
tp
Fig. 6-1: Relative variation of thermal impedance
junction to case versus pulse duration
(TO-220AC / I
2
PAK / D
2
PAK).
0
0.2
0.4
0.6
0.8
1
1.2
0
25
50
75
100
125
150
T (C)
j
P
(t )
P
(25C)
ARM p
ARM
Fig. 3: Normalized avalanche power derating
versus junction temperature.
0
20
40
60
80
100
120
140
160
180
0
2
4
6
8
10
Tamb(C)
IF(av)(A)
Rth(j-a)=15C/W
Rth(j-a)=Rth(j-c)
T
=tp/T
tp
Fig. 4-1: Average forward current versus ambient
temperature (
=0.5) (TO-220AC / I
2
PAK / D
2
PAK).
STPS8H100D/F/G/R/FP
4/8
1
10
100
100
200
500
1000
VR(V)
C(nF)
F=1MHz
Tj=25C
Fig. 8: Junction capacitance versus reverse
voltage applied (typical values).
0
4
8
12
16
20
24
28
32
36
40
0
10
20
30
40
50
60
70
80
S(Cu) (cm)
Rth(j-a) (C/W)
Fig. 10: Thermal resistance junction to ambient
versus copper surface under tab (Epoxy printed
circuit
board
FR4,
copper
thickness:
35m)(D
2
PAK).
0
0.2
0.4
0.6
0.8
1
1.2
1.4
1.6
0.1
1.0
10.0
50.0
VFM(V)
IFM(A)
Tj=25C
Tj=125C
Fig. 9: Forward voltage drop versus forward
current (maximum values).
1E-3
1E-2
1E-1
1E+0
1E+1
0.0
0.2
0.4
0.6
0.8
1.0
tp(s)
Zth(j-c)/Rth(j-c)
= 0.1
= 0.2
= 0.5
Single pulse
T
=tp/T
tp
Fig. 6-2: Relative variation of thermal impedance
junction to case versus pulse duration
(ISOWATT220AC, TO-220FPAC).
0
10
20
30
40
50
60
70
80
90
100
1E-2
1E-1
1E+0
1E+1
1E+2
1E+3
5E+3
VR(V)
IR(A)
Tj=125C
Tj=25C
Fig. 7: Reverse leakage current versus reverse
voltage applied (typical values).
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