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STPS8L30B
July 2003 - Ed: 2A
LOW DROP POWER SCHOTTKY RECTIFIER
I
F(AV)
8 A
V
RRM
30 V
Tj (max)
150 C
V
F
(max)
0.40 V
MAIN PRODUCT CHARACTERISTICS
n
LOW COST DEVICE WITH LOW DROP FOR-
WARD
VOLTAGE
FOR
LESS
POWER
DISSIPATION AND REDUCED HEATSINK
n
OPTIMIZED CONDUCTION/REVERSE LOSSES
TRADE-OFF
WHICH
LEADS
TO
THE
HIGHEST YIELD IN THE APPLICATIONS
n
AVALANCHE CAPABILITY SPECIFIED
FEATURES AND BENEFITS
Single Schottky rectifier suited to Switched Mode
Power Supplies and high frequency DC to DC
converters.
Packaged in DPAK, this device is especially in-
tended for use as a Rectifier at the secondary of
3.3V SMPS or DC/DC units.
DESCRIPTION
DPAK
K
NC
A
Symbol
Parameter
Value
Unit
V
RRM
Repetitive peak reverse voltage
30
V
I
F(RMS)
RMS forward current
7
A
I
F(AV)
Average forward current
Tc = 135C
= 0.5
8
A
I
FSM
Surge non repetitive forward current
tp = 10 ms Sinusoidal
75
A
I
RRM
Repetitive peak reverse current
tp = 2 s F = 1kHz square
1
A
I
RSM
Non repetitive peak reverse current
tp = 100s
square
2
A
P
ARM
Repetitive peak avalanche power
tp = 1s
Tj = 25C
W
T
stg
Storage temperature range
- 65 to + 150
C
Tj
Maximum junction temperature
150
C
dV/dt
Critical rate of rise of reverse voltage
10000
V/s
ABSOLUTE RATINGS (limiting values)
* :
dPtot
dTj
Rth j
a
<
-
1
(
)
thermal runaway condition for a diode on its own heatsink
STPS8L30B
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Symbol
Parameter
Value
Unit
R
th(j-c)
Junction to case
2.5
C/W
THERMAL RESISTANCES
Symbol
Tests Conditions
Tests Conditions
Min.
Typ.
Max.
Unit
I
R
*
Reverse leakage current
Tj = 25C
V
R
= V
RRM
1
mA
Tj = 100C
15
40
V
F
*
Forward voltage drop
Tj = 25C
I
F
= 8 A
0.49
V
Tj = 125C
0.35
0.4
Tj = 25C
I
F
= 16 A
0.63
Tj = 125C
0.48
0.57
STATIC ELECTRICAL CHARACTERISTICS
Pulse test :
* tp = 380 s,
< 2%
To evaluate the maximum conduction losses use the following equation :
P = 0.23 x I
F(AV)
+ 0.021 I
F
2
(RMS)
0
2
4
6
8
10
0.0
1.0
2.0
3.0
4.0
5.0
IF(av) (A)
PF(av)(W)
= 1
= 0.5
= 0.2
= 0.1
= 0.05
T
=tp/T
tp
Fig. 1: Average forward power dissipation versus
average forward current.
0
25
50
75
100
125
150
0
1
2
3
4
5
6
7
8
9
IF(av)(A)
Rth(j-a)=70C/W
Rth(j-a)=Rth(j-c)
Tamb(C)
T
=tp/T
tp
Fig. 2: Average forward current versus ambient
temperature (
=0.5).
0
0.2
0.4
0.6
0.8
1
1.2
0
25
50
75
100
125
150
T (C)
j
P
(t )
P
(25C)
ARM p
ARM
Fig. 4: Normalized avalanche power derating
versus junction temperature.
0.001
0.01
0.1
0.01
1
0.1
10
100
1000
1
t (s)
p
P
(t )
P
(1s)
ARM p
ARM
Fig. 3: Normalized avalanche power derating
versus pulse duration.
STPS8L30B
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1E-3
1E-2
1E-1
1E+0
0
20
40
60
80
100
120
IM(A)
Tc=25C
Tc=125C
Tc=75C
I
M
t
=0.5
t(s)
Fig. 5: Non repetitive surge peak forward current
versus overload duration (maximum values).
1E-4
1E-3
1E-2
1E-1
1E+0
0.0
0.2
0.4
0.6
0.8
1.0
tp(s)
Zth(j-c)/Rth(j-c)
T
=tp/T
tp
Single pulse
= 0.1
= 0.2
= 0.5
Fig. 6: Relative variation of thermal impedance
junction to ambient versus pulse duration.
0
5
10
15
20
25
30
1E-3
1E-2
1E-1
1E+0
1E+1
1E+2
3E+2
IR(mA)
Tj=125C
Tj=25C
Tj=150C
VR(V)
Fig. 7: Reverse leakage current versus reverse
voltage applied (typical values).
1
10
40
100
200
500
1000
2000
VR(V)
C(pF)
F=1MHz
Tj=25C
Fig. 8: Junction capacitance versus reverse
voltage applied (typical values).
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
0.1
1.0
10.0
100.0
VFM(V)
IFM(A)
Typical values
Tj=150C
Tj=25C
Tj=125C
Fig. 9: Forward voltage drop versus forward cur-
rent (maximum values).
STPS8L30B
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PACKAGE MECHANICAL DATA
DPAK
REF.
DIMENSIONS
Millimeters
Inches
Min.
Max
Min.
Max.
A
2.20
2.40
0.086
0.094
A1
0.90
1.10
0.035
0.043
A2
0.03
0.23
0.001
0.009
B
0.64
0.90
0.025
0.035
B2
5.20
5.40
0.204
0.212
C
0.45
0.60
0.017
0.023
C2
0.48
0.60
0.018
0.023
D
6.00
6.20
0.236
0.244
E
6.40
6.60
0.251
0.259
G
4.40
4.60
0.173
0.181
H
9.35
10.10
0.368
0.397
L2
0.80 typ.
0.031 typ.
L4
0.60
1.00
0.023
0.039
V2
0
8
0
8
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of
use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by
implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to
change without notice. This publication supersedes and replaces all information previously supplied.
STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written
approval of STMicroelectronics.
The ST logo is a registered trademark of STMicroelectronics
2003 STMicroelectronics - Printed in Italy - All rights reserved.
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Ordering type
Marking
Package
Weight
Base qty
Delivery mode
STPS8L30B
ST LS30
DPAK
0.30g
75
Tube
n
EPOXY MEETS UL94,V0
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