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Электронный компонент: STS2NF100

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1/8
October 2002
.
STS2NF100
N-CHANNEL 100V - 0.23
- 6A SO-8
STripFETTM II POWER MOSFET
s
TYPICAL R
DS
(on) = 0.23
s
EXCEPTIONAL dv/dt CAPABILITY
s
100 % AVALANCHE TESTED
s
APPLICATION ORIENTED
CHARACTERIZATION
DESCRIPTION
This MOSFET series realized with STMicroelectronics
unique STripFET process has specifically been designed
to minimize input capacitance and gate charge. It is
therefore suitable as primary switch in advanced high-
efficiency, high-frequency isolated DC-DC converters for
Telecom and Computer applications. It is also intended
for any applications with low gate drive requirements.
APPLICATIONS
s
HIGH-EFFICIENCY DC-DC CONVERTERS
s
UPS AND MOTOR CONTROL
TYPE
V
DSS
R
DS(on)
I
D
STS2NF100
100 V
<0.26
6 A
SO-8
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
(
)
Pulse width limited by safe operating area.
(
)
Current limited by the package
(1) I
SD
2A, di/dt
300A/s, V
DD
V
(BR)DSS
, T
j
T
JMAX
(2) Starting T
j
= 25
o
C, I
D
= 3A, V
DD
= 50V
Symbol
Parameter
Value
Unit
V
DS
Drain-source Voltage (V
GS
= 0)
100
V
V
DGR
Drain-gate Voltage (R
GS
= 20 k
)
100
V
V
GS
Gate- source Voltage
20
V
I
D
(
)
Drain Current (continuous) at T
C
= 25C
2
A
I
D
Drain Current (continuous) at T
C
= 100C
1.3
A
I
DM
(
)
Drain Current (pulsed)
8
A
P
tot
Total Dissipation at T
C
= 25C
2.5
W
Derating Factor
0.016
W/C
dV/dt
(1)
Peak Diode Recovery voltage slope
40
V/ns
E
AS (2)
Single Pulse Avalanche Energy
200
mJ
T
stg
Storage Temperature
-65 to 175
C
T
j
Max. Operating Junction Temperature
STS2NF100
2/8
THERMAL DATA
(*)
Mounted on FR-4 board (t
[
10 sec.)
ELECTRICAL CHARACTERISTICS (T
case
= 25 C unless otherwise specified)
OFF
ON
(*)
DYNAMIC
Rthj-amb
T
j
T
stg
(*)Thermal Resistance Junction-ambient
Thermal Operating Junction-ambient
Storage Temperature
50
-55 to 150
-55 to 150
C/W
C
C
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
V
(BR)DSS
Drain-source
Breakdown Voltage
I
D
= 250 A, V
GS
= 0
100
V
I
DSS
Zero Gate Voltage
Drain Current (V
GS
= 0)
V
DS
= Max Rating
V
DS
= Max Rating T
C
= 125C
1
10
A
A
I
GSS
Gate-body Leakage
Current (V
DS
= 0)
V
GS
= 20 V
100
nA
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
V
GS(th)
Gate Threshold Voltage
V
DS
= V
GS
I
D
= 250 A
2
3
4
V
R
DS(on)
Static Drain-source On
Resistance
V
GS
= 10 V
I
D
= 1 A
0.23
0.26
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
g
fs (*)
Forward Transconductance
V
DS
>I
D(on)
xR
DS(on)max
I
D
= 1 A
0.5
S
C
iss
C
oss
C
rss
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
V
DS
= 25V, f = 1 MHz, V
GS
= 0
280
45
20
pF
pF
pF
3/8
STS2NF100
SWITCHING ON
SWITCHING OFF
SOURCE DRAIN DIODE
(*)
Pulsed: Pulse duration = 300 s, duty cycle 1.5 %.
(
)
Pulse width limited by safe operating area.
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
t
d(on)
t
r
Turn-on Delay Time
Rise Time
V
DD
= 50 V
I
D
= 1 A
R
G
= 4.7
V
GS
= 10 V
(Resistive Load, Figure 3)
6
10
ns
ns
Q
g
Q
gs
Q
gd
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
V
DD
= 80V I
D
= 1A V
GS
=10V
10
2.5
4
nC
nC
nC
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
t
d(off)
t
f
Turn-off Delay Time
Fall Time
V
DD
= 50 V
I
D
= 1 A
R
G
= 4.7
,
V
GS
= 10 V
(Resistive Load, Figure 3)
20
3
ns
ns
t
r(Voff)
t
f
t
c
Off-Voltage Rise Time
Fall Time
Cross-over Time
V
clamp
= 80 V
I
D
= 1 A
R
G
= 4.7
V
GS
= 10 V
(Inductive Load, Figure 5)
19
8
15
ns
ns
ns
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
I
SD
I
SDM
(
)
Source-drain Current
Source-drain Current (pulsed)
6
24
A
A
V
SD
(*)
Forward On Voltage
I
SD
= 2 A
V
GS
= 0
1.3
V
t
rr
Q
rr
I
RRM
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
I
SD
= 2 A
di/dt = 100A/s
V
DD
= 10 V
T
j
= 150C
(see test circuit, Figure 5)
70
175
5
ns
nC
A
ELECTRICAL CHARACTERISTICS (continued)
Safe Operating Area
Thermal Impedance
STS2NF100
4/8
Output Characteristics
Transfer Characteristics
Transconductance
Static Drain-source On Resistance
Gate Charge vs Gate-source Voltage
Capacitance Variations
5/8
STS2NF100
Normalized Gate Threshold Voltage vs Temperature
Normalized on Resistance vs Temperature
Source-drain Diode Forward Characteristics
.
.
.