www.docs.chipfind.ru
1/8
June 2002
.
STS3DPF20V
DUAL P-CHANNEL 20V - 0.090
- 3A SO-8
STripFETTM POWER MOSFET
s
TYPICAL R
DS
(on) = 0.090
@ 4.5 V
s
TYPICAL R
DS
(on) = 0.1
@ 2.7 V
s
STANDARD OUTLINE FOR EASY
AUTOMATED SURFACE MOUNT ASSEMBLY
s
ULTRA LOW THRESHOLD
GATE DRIVE (2.7 V)
DESCRIPTION
This Power MOSFET is the latest development of
STMicroelectronis unique "Single Feature SizeTM"
strip-based process. The resulting transistor
shows extremely high packing density for low on-
resistance, rugged avalanche characteristics and
less critical alignment steps therefore a remark-
able manufacturing reproducibility.
APPLICATIONS
s
BATTERY MANAGEMENT IN NOMADIC
EQUIPMENT
s
MOBILE PHONE APPLICATIONS
TYPE
V
DSS
R
DS(on)
I
D
STS3DPF20L
20 V
<0.11
3 A
SO-8
ABSOLUTE MAXIMUM RATINGS
(
)
Pulse width limited by safe operating area.
Note: For the P-CHANNEL MOSFET actual polarity of voltages and
current has to be reversed
Symbol
Parameter
Value
Unit
V
DS
Drain-source Voltage (V
GS
= 0)
20
V
V
DGR
Drain-gate Voltage (R
GS
= 20 k
)
20
V
V
GS
Gate- source Voltage
12
V
I
D
Drain Current (continuous) at T
C
= 25C Single Operation
Drain Current (continuous) at T
C
= 100C Single Operation
3
1.9
A
A
I
DM
(
)
Drain Current (pulsed)
12
A
P
tot
Total Dissipation at T
C
= 25C Dual Operation
Total Dissipation at T
C
= 25C Single Operation
1.6
2
W
W
INTERNAL SCHEMATIC DIAGRAM
STS3DPF20V
2/8
THERMAL DATA
(*)
When Mounted on 0.5 in
2
pad of 2 oz.copper
ELECTRICAL CHARACTERISTICS (T
CASE
= 25 C UNLESS OTHERWISE SPECIFIED)
OFF
ON
(*)
DYNAMIC
Rthj-amb
T
j
T
stg
(*)Thermal Resistance Junction-ambient
Single Operation
Dual Operating
Thermal Operating Junction-ambient
Storage Temperature
62.5
78
-55 to150
-55 to 150
C/W
C/W
C
C
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
V
(BR)DSS
Drain-source
Breakdown Voltage
I
D
= 250 A, V
GS
= 0
20
V
I
DSS
Zero Gate Voltage
Drain Current (V
GS
= 0)
V
DS
= Max Rating
V
DS
= Max Rating T
C
= 125C
1
10
A
A
I
GSS
Gate-body Leakage
Current (V
DS
= 0)
V
GS
= 12 V
100
nA
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
V
GS(th)
Gate Threshold Voltage
V
DS
= V
GS
I
D
= 250 A
0.6
V
R
DS(on)
Static Drain-source On
Resistance
V
GS
= 4.5 V
I
D
= 1.5 A
V
GS
= 2.7 V
I
D
= 1.5 A
0.090
0.100
0.110
0.135
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
g
fs (*)
Forward Transconductance
V
DS
= 15 V
I
D
= 2 A
7.5
S
C
iss
C
oss
C
rss
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
V
DS
= 25V, f = 1 MHz, V
GS
= 0
500
140
30
pF
pF
pF
3/8
STS3DPF20V
SWITCHING ON
SWITCHING OFF
SOURCE DRAIN DIODE
(*)
Pulsed: Pulse duration = 300 s, duty cycle 1.5 %.
(
)
Pulse width limited by safe operating area.
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
t
d(on)
t
r
Turn-on Delay Time
Rise Time
V
DD
= 10 V
I
D
= 1.5 A
R
G
= 4.7
V
GS
= 4.5 V
(Resistive Load, Figure 1)
38
39
ns
ns
Q
g
Q
gs
Q
gd
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
V
DD
= 10V I
D
= 3A V
GS
=5V
(See test circuit, Figure 2)
6.2
1
1.4
8.5
nC
nC
nC
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
t
d(off)
t
f
Turn-off Delay Time
Fall Time
V
DD
= 10 V
I
D
= 1.5 A
R
G
= 4.7
,
V
GS
= 4.5 V
(Resistive Load, Figure 1)
54
12
ns
ns
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
I
SD
I
SDM
(
)
Source-drain Current
Source-drain Current (pulsed)
3
12
A
A
V
SD
(*)
Forward On Voltage
I
SD
= 3 A
V
GS
= 0
1.2
V
t
rr
Q
rr
I
RRM
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
I
SD
= 3 A
di/dt = 100A/s
V
DD
= 15 V
T
j
= 150C
(See test circuit, Figure 3)
20
13
1.3
ns
nC
A
ELECTRICAL CHARACTERISTICS (continued)
Safe Operating Area
Thermal Impedance
STS3DPF20V
4/8
Output Characteristics
Transfer Characteristics
Transconductance
Static Drain-source On Resistance
Gate Charge vs Gate-source Voltage
Capacitance Variations
5/8
STS3DPF20V
Normalized Gate Threshold Voltage vs Temperature
Normalized on Resistance vs Temperature
Source-drain Diode Forward Characteristics
Normalized Breakdown Voltage vs Temperature
.
.
PDF 
ZIP